IT1319755B1 - Dispositivo integrato in configurazione emitter-switching e relativoprocesso di fabbricazione - Google Patents
Dispositivo integrato in configurazione emitter-switching e relativoprocesso di fabbricazioneInfo
- Publication number
- IT1319755B1 IT1319755B1 IT2000MI002836A ITMI20002836A IT1319755B1 IT 1319755 B1 IT1319755 B1 IT 1319755B1 IT 2000MI002836 A IT2000MI002836 A IT 2000MI002836A IT MI20002836 A ITMI20002836 A IT MI20002836A IT 1319755 B1 IT1319755 B1 IT 1319755B1
- Authority
- IT
- Italy
- Prior art keywords
- emitter
- manufacturing process
- integrated device
- switching configuration
- related manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT2000MI002836A IT1319755B1 (it) | 2000-12-28 | 2000-12-28 | Dispositivo integrato in configurazione emitter-switching e relativoprocesso di fabbricazione |
| US10/032,289 US6979883B2 (en) | 2000-12-28 | 2001-12-21 | Integrated device in emitter-switching configuration and related manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT2000MI002836A IT1319755B1 (it) | 2000-12-28 | 2000-12-28 | Dispositivo integrato in configurazione emitter-switching e relativoprocesso di fabbricazione |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ITMI20002836A1 ITMI20002836A1 (it) | 2002-06-28 |
| IT1319755B1 true IT1319755B1 (it) | 2003-11-03 |
Family
ID=11446333
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2000MI002836A IT1319755B1 (it) | 2000-12-28 | 2000-12-28 | Dispositivo integrato in configurazione emitter-switching e relativoprocesso di fabbricazione |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6979883B2 (it) |
| IT (1) | IT1319755B1 (it) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5048242B2 (ja) * | 2005-11-30 | 2012-10-17 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
| US10290566B2 (en) * | 2014-09-23 | 2019-05-14 | Infineon Technologies Austria Ag | Electronic component |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3788500T2 (de) * | 1986-10-31 | 1994-04-28 | Nippon Denso Co | Bipolarer Halbleitertransistor. |
| EP0646965B1 (en) * | 1993-09-17 | 1999-01-07 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | An integrated device with a bipolar transistor and a MOSFET transistor in an emitter switching configuration |
| US6127723A (en) * | 1998-01-30 | 2000-10-03 | Sgs-Thomson Microelectronics, S.R.L. | Integrated device in an emitter-switching configuration |
| JP3707942B2 (ja) * | 1998-12-17 | 2005-10-19 | 三菱電機株式会社 | 半導体装置とそれを用いた半導体回路 |
| US6614633B1 (en) * | 1999-03-19 | 2003-09-02 | Denso Corporation | Semiconductor device including a surge protecting circuit |
| KR100317622B1 (ko) * | 1999-03-24 | 2001-12-22 | 구본준, 론 위라하디락사 | 박막트랜지스터 및 그의 제조방법 |
-
2000
- 2000-12-28 IT IT2000MI002836A patent/IT1319755B1/it active
-
2001
- 2001-12-21 US US10/032,289 patent/US6979883B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| ITMI20002836A1 (it) | 2002-06-28 |
| US20020109151A1 (en) | 2002-08-15 |
| US6979883B2 (en) | 2005-12-27 |
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