DE60101217D1 - Quantumcascade-laser und sein herstellungsverfahren - Google Patents

Quantumcascade-laser und sein herstellungsverfahren

Info

Publication number
DE60101217D1
DE60101217D1 DE60101217T DE60101217T DE60101217D1 DE 60101217 D1 DE60101217 D1 DE 60101217D1 DE 60101217 T DE60101217 T DE 60101217T DE 60101217 T DE60101217 T DE 60101217T DE 60101217 D1 DE60101217 D1 DE 60101217D1
Authority
DE
Germany
Prior art keywords
quantumcascade
laser
manufacturing process
manufacturing
quantumcascade laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60101217T
Other languages
English (en)
Other versions
DE60101217T2 (de
Inventor
Mattias Beck
Jerome Faist
Antoine Muller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alpes Lasers SA
Original Assignee
Alpes Lasers SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alpes Lasers SA filed Critical Alpes Lasers SA
Application granted granted Critical
Publication of DE60101217D1 publication Critical patent/DE60101217D1/de
Publication of DE60101217T2 publication Critical patent/DE60101217T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE60101217T 2000-03-03 2001-02-26 Quantumcascade-laser und sein herstellungsverfahren Expired - Lifetime DE60101217T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP00810183A EP1130724A1 (de) 2000-03-03 2000-03-03 Quantenkaskadierter Laser und sein Herstellungsverfahren
EP00810183 2000-03-03
PCT/CH2001/000123 WO2001065651A1 (fr) 2000-03-03 2001-02-26 Laser a cascade quantique et procede pour la fabrication d'un tel laser

Publications (2)

Publication Number Publication Date
DE60101217D1 true DE60101217D1 (de) 2003-12-18
DE60101217T2 DE60101217T2 (de) 2004-09-09

Family

ID=8174582

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60101217T Expired - Lifetime DE60101217T2 (de) 2000-03-03 2001-02-26 Quantumcascade-laser und sein herstellungsverfahren

Country Status (5)

Country Link
US (2) US6665325B2 (de)
EP (2) EP1130724A1 (de)
JP (1) JP2003526214A (de)
DE (1) DE60101217T2 (de)
WO (1) WO2001065651A1 (de)

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Publication number Priority date Publication date Assignee Title
US6449024B1 (en) 1996-01-26 2002-09-10 Semiconductor Energy Laboratory Co., Inc. Liquid crystal electro-optical device utilizing a polymer with an anisotropic refractive index
EP1283571B1 (de) 2001-08-06 2015-01-14 nanoplus GmbH Nanosystems and Technologies Laser mit schwach gekoppeltem Gitterbereich
ATE361565T1 (de) * 2002-03-08 2007-05-15 Nanoplus Gmbh Nanosystems And Ein halbleiterlaserarray mit seitlicher gratingstruktur
US7301977B2 (en) * 2004-06-10 2007-11-27 Nanoplus Gmbh Tuneable unipolar lasers
US7274719B2 (en) * 2005-03-09 2007-09-25 Agilent Technologies, Inc. Buried heterostructure quantum cascade laser
US7403552B2 (en) * 2006-03-10 2008-07-22 Wisconsin Alumni Research Foundation High efficiency intersubband semiconductor lasers
JP2008218915A (ja) * 2007-03-07 2008-09-18 Hamamatsu Photonics Kk 量子カスケードレーザ素子
JP5355599B2 (ja) * 2011-01-19 2013-11-27 株式会社東芝 半導体発光装置およびその製造方法
JP5729138B2 (ja) * 2011-05-30 2015-06-03 住友電気工業株式会社 光半導体デバイスの製造方法
JP5803366B2 (ja) * 2011-07-14 2015-11-04 住友電気工業株式会社 埋め込みヘテロ構造半導体レーザの製造方法及び埋め込みヘテロ構造半導体レーザ
JP2013149665A (ja) 2012-01-17 2013-08-01 Sumitomo Electric Ind Ltd 量子カスケード半導体レーザ
JP2013254907A (ja) * 2012-06-08 2013-12-19 Sumitomo Electric Ind Ltd 量子カスケード半導体レーザ
JP2014229744A (ja) * 2013-05-22 2014-12-08 住友電気工業株式会社 半導体発光組立体
JP6467193B2 (ja) * 2014-10-30 2019-02-06 浜松ホトニクス株式会社 量子カスケードレーザ
US10374393B2 (en) 2014-12-03 2019-08-06 Alpes Lasers Sa Quantum cascade laser with current blocking layers
EP3235077B1 (de) * 2014-12-19 2020-09-30 Alpes Lasers S.A. Quantenkaskadenlaser, der für die montage mit der epitaxieseite nach unten optimiert ist.
JP6464895B2 (ja) 2015-04-03 2019-02-06 住友電気工業株式会社 量子カスケード半導体レーザ
JP2016197657A (ja) 2015-04-03 2016-11-24 住友電気工業株式会社 量子カスケード半導体レーザ
JP2017157865A (ja) * 2017-06-07 2017-09-07 株式会社東芝 半導体発光装置およびその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62166586A (ja) * 1986-01-20 1987-07-23 Nec Corp 半導体発光素子とその製造方法
JP2747080B2 (ja) * 1990-03-26 1998-05-06 松下電器産業株式会社 半導体レーザ装置およびその製造方法
US5214662A (en) * 1990-11-16 1993-05-25 Furukawa Electric Co., Ltd. Semiconductor optical devices with pn current blocking layers of wide-band gap materials
JP2814786B2 (ja) * 1991-10-08 1998-10-27 日本電気株式会社 半導体レーザ
US5416790A (en) * 1992-11-06 1995-05-16 Sanyo Electric Co., Ltd. Semiconductor laser with a self-sustained pulsation
DE4314498A1 (de) * 1993-05-03 1994-11-10 Bayer Ag Verfahren zur Herstellung von Perfluoralkoxy(alkylthio)-benzolen
JPH07193333A (ja) 1993-12-27 1995-07-28 Mitsubishi Chem Corp 半導体発光素子
US5400354A (en) * 1994-02-08 1995-03-21 Ludowise; Michael Laminated upper cladding structure for a light-emitting device
JPH07254750A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体レーザ
US5789772A (en) * 1994-07-15 1998-08-04 The Whitaker Corporation Semi-insulating surface light emitting devices
JPH09331110A (ja) * 1996-06-12 1997-12-22 Mitsubishi Electric Corp 光半導体装置、および光半導体装置の製造方法
JP3684519B2 (ja) * 1996-08-20 2005-08-17 富士通株式会社 半導体レーザの製造方法
US5789722A (en) * 1996-11-12 1998-08-04 Zimac Laboratories, Inc. Modular multizone heater system and method
GB9704987D0 (en) * 1997-03-11 1997-04-30 Isis Innovation Infrared radiation source
JPH11121860A (ja) * 1997-10-20 1999-04-30 Oki Electric Ind Co Ltd 化合物半導体発光素子およびその形成方法
US6137817A (en) * 1998-06-12 2000-10-24 Lucent Technologies Inc. Quantum cascade laser
US6556605B1 (en) * 2000-02-29 2003-04-29 Triquent Technology Holding, Co. Method and device for preventing zinc/iron interaction in a semiconductor laser
US6463088B1 (en) * 2000-07-07 2002-10-08 Lucent Technologies Inc. Mesa geometry semiconductor light emitter having chalcogenide dielectric coating

Also Published As

Publication number Publication date
DE60101217T2 (de) 2004-09-09
JP2003526214A (ja) 2003-09-02
EP1130724A1 (de) 2001-09-05
EP1262003B1 (de) 2003-11-12
US20030021315A1 (en) 2003-01-30
EP1262003A1 (de) 2002-12-04
US6665325B2 (en) 2003-12-16
US20040126912A1 (en) 2004-07-01
WO2001065651A1 (fr) 2001-09-07

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