DE60218606D1 - Photodetektor und sein Betriebsverfahren - Google Patents
Photodetektor und sein BetriebsverfahrenInfo
- Publication number
- DE60218606D1 DE60218606D1 DE60218606T DE60218606T DE60218606D1 DE 60218606 D1 DE60218606 D1 DE 60218606D1 DE 60218606 T DE60218606 T DE 60218606T DE 60218606 T DE60218606 T DE 60218606T DE 60218606 D1 DE60218606 D1 DE 60218606D1
- Authority
- DE
- Germany
- Prior art keywords
- photodetector
- operating method
- operating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000011017 operating method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Optical Communication System (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001360040 | 2001-11-26 | ||
JP2001360040A JP4157698B2 (ja) | 2001-11-26 | 2001-11-26 | 半導体受光素子およびその駆動方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60218606D1 true DE60218606D1 (de) | 2007-04-19 |
DE60218606T2 DE60218606T2 (de) | 2007-08-30 |
Family
ID=19170933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60218606T Expired - Lifetime DE60218606T2 (de) | 2001-11-26 | 2002-11-13 | Photodetektor und sein Betriebsverfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US6831265B2 (de) |
EP (1) | EP1315217B1 (de) |
JP (1) | JP4157698B2 (de) |
DE (1) | DE60218606T2 (de) |
TW (1) | TW580774B (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4058457B2 (ja) * | 2000-12-19 | 2008-03-12 | ユーディナデバイス株式会社 | 半導体受光装置 |
US20050161695A1 (en) * | 2003-09-05 | 2005-07-28 | Sae Magnetics (H.K.) Ltd. | Systems and methods having a metal-semiconductor-metal (MSM) photodetector with buried oxide layer |
KR100506741B1 (ko) * | 2003-12-24 | 2005-08-08 | 삼성전기주식회사 | 플립칩용 질화물 반도체 발광소자 및 그 제조방법 |
US7683308B2 (en) * | 2004-01-12 | 2010-03-23 | Ecole Polytechnique Federale de Lausanne EFPL | Controlling spectral response of photodetector for an image sensor |
TWI237110B (en) * | 2004-02-20 | 2005-08-01 | Asia Optical Co Inc | Optical power meter |
US7259444B1 (en) * | 2004-07-20 | 2007-08-21 | Hrl Laboratories, Llc | Optoelectronic device with patterned ion implant subcollector |
JP4674894B2 (ja) * | 2004-12-28 | 2011-04-20 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
US7501628B2 (en) * | 2005-02-14 | 2009-03-10 | Ecole Polytechnique Federale De Lausanne Epfl | Transducer for reading information stored on an optical record carrier, single photon detector based storage system and method for reading data from an optical record carrier |
US7547872B2 (en) * | 2005-02-14 | 2009-06-16 | Ecole Polytechnique Federale De Lausanne | Integrated circuit comprising an array of single photon avalanche diodes |
US7233051B2 (en) * | 2005-06-28 | 2007-06-19 | Intel Corporation | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
US20070012948A1 (en) * | 2005-07-15 | 2007-01-18 | Dries J C | Combined APD / PIN InGaAs photodetector with microlens structure and method of manufacture |
WO2007011558A2 (en) * | 2005-07-15 | 2007-01-25 | Xponent Photonics Inc | Reflector for a double-pass photodetector |
JP5015494B2 (ja) * | 2006-05-22 | 2012-08-29 | 住友電工デバイス・イノベーション株式会社 | 半導体受光素子 |
US7741657B2 (en) | 2006-07-17 | 2010-06-22 | Intel Corporation | Inverted planar avalanche photodiode |
US7683397B2 (en) * | 2006-07-20 | 2010-03-23 | Intel Corporation | Semi-planar avalanche photodiode |
US7795064B2 (en) * | 2007-11-14 | 2010-09-14 | Jds Uniphase Corporation | Front-illuminated avalanche photodiode |
US8242432B2 (en) * | 2009-10-23 | 2012-08-14 | Kotura, Inc. | System having light sensor with enhanced sensitivity including a multiplication layer for generating additional electrons |
US8639065B2 (en) * | 2010-06-18 | 2014-01-28 | Kotura, Inc. | System having avalanche effect light sensor with enhanced sensitivity |
US8461624B2 (en) * | 2010-11-22 | 2013-06-11 | Intel Corporation | Monolithic three terminal photodetector |
JP2012248812A (ja) * | 2011-05-31 | 2012-12-13 | Sumitomo Electric Ind Ltd | 半導体光集積素子の製造方法 |
JP6041120B2 (ja) | 2012-03-22 | 2016-12-07 | 住友電工デバイス・イノベーション株式会社 | 半導体受光素子の製造方法 |
US9377581B2 (en) | 2013-05-08 | 2016-06-28 | Mellanox Technologies Silicon Photonics Inc. | Enhancing the performance of light sensors that receive light signals from an integrated waveguide |
JP2015153899A (ja) * | 2014-02-14 | 2015-08-24 | 日本電信電話株式会社 | 受光素子の制御方法 |
CN104576806B (zh) * | 2014-08-12 | 2016-01-06 | 深圳市芯思杰联邦国际科技发展有限公司 | 侧入光式pin光电探测器芯片及其制作方法 |
JP6362142B2 (ja) * | 2015-09-15 | 2018-07-25 | 日本電信電話株式会社 | ゲルマニウム受光器 |
EP3261134A1 (de) * | 2016-06-20 | 2017-12-27 | ams AG | Direktionaler photodetektor und anordnung mit optischem sensor |
JP6862941B2 (ja) * | 2017-03-09 | 2021-04-21 | 三菱電機株式会社 | 裏面入射型受光素子およびその製造方法 |
JP6972067B2 (ja) * | 2017-11-17 | 2021-11-24 | 株式会社東芝 | 半導体装置 |
CN111739952A (zh) * | 2020-06-18 | 2020-10-02 | 武汉光迅科技股份有限公司 | 光探测器及制作方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4876209A (en) * | 1988-01-06 | 1989-10-24 | U.S.C. | Method of making avalanche photodiode |
US5179430A (en) * | 1988-05-24 | 1993-01-12 | Nec Corporation | Planar type heterojunction avalanche photodiode |
GB9009726D0 (en) * | 1990-05-01 | 1990-06-20 | British Telecomm | Optoelectronic device |
JP2639347B2 (ja) * | 1994-06-23 | 1997-08-13 | 日本電気株式会社 | 半導体受光素子 |
JP3287458B2 (ja) * | 1998-06-24 | 2002-06-04 | 日本電気株式会社 | 超高速・低電圧駆動アバランシェ増倍型半導体受光素子 |
JP3141847B2 (ja) * | 1998-07-03 | 2001-03-07 | 日本電気株式会社 | アバランシェフォトダイオード |
JP3910817B2 (ja) * | 2000-12-19 | 2007-04-25 | ユーディナデバイス株式会社 | 半導体受光装置 |
-
2001
- 2001-11-26 JP JP2001360040A patent/JP4157698B2/ja not_active Expired - Lifetime
-
2002
- 2002-11-13 EP EP02257832A patent/EP1315217B1/de not_active Expired - Fee Related
- 2002-11-13 TW TW091133294A patent/TW580774B/zh not_active IP Right Cessation
- 2002-11-13 DE DE60218606T patent/DE60218606T2/de not_active Expired - Lifetime
- 2002-11-15 US US10/294,898 patent/US6831265B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE60218606T2 (de) | 2007-08-30 |
JP2003163364A (ja) | 2003-06-06 |
US6831265B2 (en) | 2004-12-14 |
TW200300613A (en) | 2003-06-01 |
US20030164444A1 (en) | 2003-09-04 |
TW580774B (en) | 2004-03-21 |
EP1315217B1 (de) | 2007-03-07 |
JP4157698B2 (ja) | 2008-10-01 |
EP1315217A3 (de) | 2005-05-04 |
EP1315217A2 (de) | 2003-05-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE |