DE60020737D1 - Sic-einkristall und herstellungsverfahren dafür - Google Patents

Sic-einkristall und herstellungsverfahren dafür

Info

Publication number
DE60020737D1
DE60020737D1 DE60020737T DE60020737T DE60020737D1 DE 60020737 D1 DE60020737 D1 DE 60020737D1 DE 60020737 T DE60020737 T DE 60020737T DE 60020737 T DE60020737 T DE 60020737T DE 60020737 D1 DE60020737 D1 DE 60020737D1
Authority
DE
Germany
Prior art keywords
einkristall
sic
manufacturing
method therefor
therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60020737T
Other languages
English (en)
Other versions
DE60020737T2 (de
Inventor
Hiromu Shiomi
Tsunenobu Kimoto
Hiroyuki Matsunami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Mitsubishi Corp
Kansai Electric Power Co Inc
Sixon Inc
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Corp, Kansai Electric Power Co Inc, Sixon Inc, Sumitomo Electric Industries Ltd filed Critical Mitsubishi Corp
Application granted granted Critical
Publication of DE60020737D1 publication Critical patent/DE60020737D1/de
Publication of DE60020737T2 publication Critical patent/DE60020737T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
DE60020737T 1999-09-06 2000-09-06 Sic-einkristall und herstellungsverfahren dafür Expired - Lifetime DE60020737T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP25157299 1999-09-06
JP25157299 1999-09-06
PCT/JP2000/006054 WO2001018286A1 (fr) 1999-09-06 2000-09-06 Monocristal sic et son procede de tirage

Publications (2)

Publication Number Publication Date
DE60020737D1 true DE60020737D1 (de) 2005-07-14
DE60020737T2 DE60020737T2 (de) 2006-03-16

Family

ID=17224820

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60020737T Expired - Lifetime DE60020737T2 (de) 1999-09-06 2000-09-06 Sic-einkristall und herstellungsverfahren dafür

Country Status (6)

Country Link
US (1) US6660084B1 (de)
EP (1) EP1243674B1 (de)
JP (1) JP3692076B2 (de)
DE (1) DE60020737T2 (de)
TW (1) TW526300B (de)
WO (1) WO2001018286A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60033829T2 (de) * 1999-09-07 2007-10-11 Sixon Inc. SiC-HALBLEITERSCHEIBE, SiC-HALBLEITERBAUELEMENT SOWIE HERSTELLUNGSVERFAHREN FÜR EINE SiC-HALBLEITERSCHEIBE
JP4253974B2 (ja) * 1999-12-22 2009-04-15 住友電気工業株式会社 ＳｉＣ単結晶およびその成長方法
JP4716558B2 (ja) * 2000-12-12 2011-07-06 株式会社デンソー 炭化珪素基板
JP4581270B2 (ja) * 2001-03-05 2010-11-17 住友電気工業株式会社 ＳｉＣ半導体のイオン注入層及びその製造方法
TW583354B (en) * 2001-05-25 2004-04-11 Mitsui Shipbuilding Eng Method for producing amorphous SiC wafer
US7527869B2 (en) 2001-06-04 2009-05-05 Kwansei Gakuin Educational Foundation Single crystal silicon carbide and method for producing the same
JP4317189B2 (ja) * 2003-07-30 2009-08-19 関西電力株式会社 高耐熱半導体装置
JP2010076967A (ja) * 2008-09-25 2010-04-08 Sumitomo Electric Ind Ltd 炭化ケイ素基板の製造方法および炭化ケイ素基板
WO2010140564A1 (ja) * 2009-06-01 2010-12-09 三菱化学株式会社 窒化物半導体結晶およびその製造方法
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
US20120161157A1 (en) * 2009-12-25 2012-06-28 Sumitomo Electric Industries, Ltd. Silicon carbide substrate
JP2011243770A (ja) * 2010-05-19 2011-12-01 Sumitomo Electric Ind Ltd 炭化珪素基板、半導体装置、炭化珪素基板の製造方法
CN102869816A (zh) * 2011-03-22 2013-01-09 住友电气工业株式会社 碳化硅衬底
JP5879770B2 (ja) * 2011-06-27 2016-03-08 住友電気工業株式会社 半導体装置およびその製造方法
JP5742657B2 (ja) 2011-10-20 2015-07-01 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
CN102592976B (zh) * 2012-03-22 2014-04-02 西安电子科技大学 P型重掺杂碳化硅薄膜外延制备方法
JP5943509B2 (ja) * 2012-03-30 2016-07-05 国立研究開発法人産業技術総合研究所 炭化珪素基板への成膜方法
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
JP2016132604A (ja) * 2015-01-21 2016-07-25 住友電気工業株式会社 炭化珪素基板および炭化珪素基板の製造方法
DE112016004679T8 (de) 2015-10-13 2018-07-12 Sumitomo Electric Industries, Ltd. Halbleiterstapel
WO2023011724A1 (de) 2021-08-05 2023-02-09 Wacker Chemie Ag Spezifische alpha-1,2-fucosyltransferase für die biokatalytische synthese von 2'-fucosyllactose

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948792B2 (ja) 1982-08-17 1984-11-28 工業技術院長 炭化けい素結晶成長法
JPH0637353B2 (ja) 1988-04-13 1994-05-18 新日本製鐵株式会社 炭化珪素単結晶成長方法および装置
JPH0416597A (ja) * 1990-05-09 1992-01-21 Sharp Corp 炭化珪素単結晶の製造方法
JP2804860B2 (ja) 1991-04-18 1998-09-30 新日本製鐵株式会社 ＳｉＣ単結晶およびその成長方法
JPH07267795A (ja) 1994-03-25 1995-10-17 Nippon Steel Corp ＳｉＣ単結晶の成長方法
US6063185A (en) * 1998-10-09 2000-05-16 Cree, Inc. Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy

Also Published As

Publication number Publication date
EP1243674A4 (de) 2003-02-05
JP3692076B2 (ja) 2005-09-07
TW526300B (en) 2003-04-01
DE60020737T2 (de) 2006-03-16
EP1243674B1 (de) 2005-06-08
EP1243674A1 (de) 2002-09-25
WO2001018286A1 (fr) 2001-03-15
US6660084B1 (en) 2003-12-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SIXON LTD., KYOTO, JP

Owner name: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP

8327 Change in the person/name/address of the patent owner

Owner name: SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP