DE112016004679T8 - Halbleiterstapel - Google Patents
Halbleiterstapel Download PDFInfo
- Publication number
- DE112016004679T8 DE112016004679T8 DE112016004679.0T DE112016004679T DE112016004679T8 DE 112016004679 T8 DE112016004679 T8 DE 112016004679T8 DE 112016004679 T DE112016004679 T DE 112016004679T DE 112016004679 T8 DE112016004679 T8 DE 112016004679T8
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor stack
- stack
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B25/00—Annealing glass products
- C03B25/02—Annealing glass products in a discontinuous way
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015202024 | 2015-10-13 | ||
JP2015-202024 | 2015-10-13 | ||
PCT/JP2016/073603 WO2017064913A1 (ja) | 2015-10-13 | 2016-08-10 | 半導体積層体 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE112016004679T5 DE112016004679T5 (de) | 2018-06-21 |
DE112016004679T8 true DE112016004679T8 (de) | 2018-07-12 |
Family
ID=58517433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112016004679.0T Withdrawn - After Issue DE112016004679T8 (de) | 2015-10-13 | 2016-08-10 | Halbleiterstapel |
Country Status (5)
Country | Link |
---|---|
US (3) | US10395924B2 (de) |
JP (2) | JP6816710B2 (de) |
CN (1) | CN108028181B (de) |
DE (1) | DE112016004679T8 (de) |
WO (1) | WO2017064913A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10541156B1 (en) | 2018-10-31 | 2020-01-21 | International Business Machines Corporation | Multi integrated circuit chip carrier package |
JP7294502B1 (ja) | 2022-06-03 | 2023-06-20 | 株式会社レゾナック | SiC単結晶基板 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0927489A (ja) | 1995-07-11 | 1997-01-28 | Nippondenso Co Ltd | 半導体基板及びその製造方法 |
EP1243674B1 (de) * | 1999-09-06 | 2005-06-08 | Sixon Inc. | Sic-einkristall und herstellungsverfahren dafür |
DE60033829T2 (de) * | 1999-09-07 | 2007-10-11 | Sixon Inc. | SiC-HALBLEITERSCHEIBE, SiC-HALBLEITERBAUELEMENT SOWIE HERSTELLUNGSVERFAHREN FÜR EINE SiC-HALBLEITERSCHEIBE |
JP3801091B2 (ja) * | 2002-05-09 | 2006-07-26 | 富士電機デバイステクノロジー株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP3803611B2 (ja) * | 2002-05-16 | 2006-08-02 | 松下電器産業株式会社 | 半導体基板、半導体素子、および半導体素子の製造方法 |
JP4539140B2 (ja) * | 2004-03-29 | 2010-09-08 | 住友電気工業株式会社 | 炭化珪素基板およびその製造方法 |
JP4694144B2 (ja) * | 2004-05-14 | 2011-06-08 | 住友電気工業株式会社 | SiC単結晶の成長方法およびそれにより成長したSiC単結晶 |
JP4786223B2 (ja) * | 2005-05-24 | 2011-10-05 | 新日本製鐵株式会社 | エピタキシャル炭化珪素単結晶基板及びその製造方法 |
JP5045272B2 (ja) * | 2007-07-03 | 2012-10-10 | 富士電機株式会社 | 単結晶炭化珪素基板の製造方法 |
JPWO2012127748A1 (ja) * | 2011-03-22 | 2014-07-24 | 住友電気工業株式会社 | 炭化珪素基板 |
JP2014038899A (ja) | 2012-08-13 | 2014-02-27 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
TW201539935A (zh) | 2014-04-03 | 2015-10-16 | Lausdeo Corp | 行動電源 |
-
2016
- 2016-08-10 DE DE112016004679.0T patent/DE112016004679T8/de not_active Withdrawn - After Issue
- 2016-08-10 WO PCT/JP2016/073603 patent/WO2017064913A1/ja active Application Filing
- 2016-08-10 US US15/758,805 patent/US10395924B2/en active Active
- 2016-08-10 JP JP2017500396A patent/JP6816710B2/ja active Active
- 2016-08-10 CN CN201680052955.9A patent/CN108028181B/zh active Active
-
2019
- 2019-07-16 US US16/512,608 patent/US10580647B2/en active Active
-
2020
- 2020-01-17 US US16/745,672 patent/US10734222B2/en active Active
- 2020-12-15 JP JP2020207768A patent/JP7020533B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2021057606A (ja) | 2021-04-08 |
CN108028181A (zh) | 2018-05-11 |
US20200152457A1 (en) | 2020-05-14 |
US10580647B2 (en) | 2020-03-03 |
JP7020533B2 (ja) | 2022-02-16 |
JPWO2017064913A1 (ja) | 2018-08-02 |
JP6816710B2 (ja) | 2021-01-20 |
DE112016004679T5 (de) | 2018-06-21 |
CN108028181B (zh) | 2022-03-01 |
US20190088477A1 (en) | 2019-03-21 |
US20190341247A1 (en) | 2019-11-07 |
US10734222B2 (en) | 2020-08-04 |
WO2017064913A1 (ja) | 2017-04-20 |
US10395924B2 (en) | 2019-08-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R083 | Amendment of/additions to inventor(s) | ||
R005 | Application deemed withdrawn due to failure to request examination |