DE69941874D1 - Optielektronisches bauelement und herstellungsverfahren - Google Patents

Optielektronisches bauelement und herstellungsverfahren

Info

Publication number
DE69941874D1
DE69941874D1 DE69941874T DE69941874T DE69941874D1 DE 69941874 D1 DE69941874 D1 DE 69941874D1 DE 69941874 T DE69941874 T DE 69941874T DE 69941874 T DE69941874 T DE 69941874T DE 69941874 D1 DE69941874 D1 DE 69941874D1
Authority
DE
Germany
Prior art keywords
optielectronic
manufacturing
component
optielectronic component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69941874T
Other languages
English (en)
Inventor
Harri Kopola
Juha Rantala
Jouko Vaehaekangas
Pentti Karioja
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Valtion Teknillinen Tutkimuskeskus
Original Assignee
Valtion Teknillinen Tutkimuskeskus
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valtion Teknillinen Tutkimuskeskus filed Critical Valtion Teknillinen Tutkimuskeskus
Application granted granted Critical
Publication of DE69941874D1 publication Critical patent/DE69941874D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE69941874T 1998-08-11 1999-08-10 Optielektronisches bauelement und herstellungsverfahren Expired - Lifetime DE69941874D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI981731A FI109944B (fi) 1998-08-11 1998-08-11 Optoelektroninen komponentti ja valmistusmenetelmä
PCT/FI1999/000663 WO2000010206A2 (en) 1998-08-11 1999-08-10 Optoelectronic component and manufacturing method

Publications (1)

Publication Number Publication Date
DE69941874D1 true DE69941874D1 (de) 2010-02-11

Family

ID=8552288

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69941874T Expired - Lifetime DE69941874D1 (de) 1998-08-11 1999-08-10 Optielektronisches bauelement und herstellungsverfahren

Country Status (7)

Country Link
US (1) US6586268B1 (de)
EP (1) EP1110245B1 (de)
JP (1) JP2002522890A (de)
CN (1) CN1303701C (de)
DE (1) DE69941874D1 (de)
FI (1) FI109944B (de)
WO (1) WO2000010206A2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI110675B (fi) * 2001-07-06 2003-03-14 Valtion Teknillinen Menetelmä orgaanisen valoa emittoivan diodin muokkaamiseksi
KR100581850B1 (ko) * 2002-02-27 2006-05-22 삼성에스디아이 주식회사 유기 전계 발광 표시 장치와 그 제조 방법
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7417247B2 (en) * 2002-09-30 2008-08-26 Infineon Technologies, Ag Pentaarylcyclopentadienyl units as active units in resistive memory elements
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US7579775B2 (en) * 2004-12-11 2009-08-25 Samsung Mobile Display Co., Ltd. Electroluminescence display device with improved external light coupling efficiency and method of manufacturing the same
US7803308B2 (en) 2005-12-01 2010-09-28 Molecular Imprints, Inc. Technique for separating a mold from solidified imprinting material
US7906058B2 (en) 2005-12-01 2011-03-15 Molecular Imprints, Inc. Bifurcated contact printing technique
JP4987012B2 (ja) 2005-12-08 2012-07-25 モレキュラー・インプリンツ・インコーポレーテッド 基板の両面パターニングする方法及びシステム
US7670530B2 (en) 2006-01-20 2010-03-02 Molecular Imprints, Inc. Patterning substrates employing multiple chucks
US8142850B2 (en) 2006-04-03 2012-03-27 Molecular Imprints, Inc. Patterning a plurality of fields on a substrate to compensate for differing evaporation times
US8850980B2 (en) 2006-04-03 2014-10-07 Canon Nanotechnologies, Inc. Tessellated patterns in imprint lithography
US7802978B2 (en) 2006-04-03 2010-09-28 Molecular Imprints, Inc. Imprinting of partial fields at the edge of the wafer
WO2007117524A2 (en) * 2006-04-03 2007-10-18 Molecular Imprints, Inc. Method of concurrently patterning a substrate having a plurality of fields and alignment marks
US8012395B2 (en) 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
KR101014339B1 (ko) 2008-01-10 2011-02-15 고려대학교 산학협력단 발광 효율이 향상된 질화물 발광 소자 및 그 제조 방법
JP2010034494A (ja) * 2008-06-30 2010-02-12 Sumitomo Chemical Co Ltd 有機光電変換素子
US9520378B2 (en) * 2012-12-21 2016-12-13 Intel Corporation Thermal matched composite die
CN107731864B (zh) * 2017-11-20 2020-06-12 开发晶照明（厦门）有限公司 微发光二极管显示器和制作方法
CN114007491A (zh) * 2019-03-28 2022-02-01 科伊特健康有限公司 菌斑检测方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130397A (en) * 1990-02-13 1992-07-14 The United States Of America As Represented By The United States Department Of Energy Hybrid sol-gel optical materials
US5608287A (en) * 1995-02-23 1997-03-04 Eastman Kodak Company Conductive electron injector for light-emitting diodes
JP3787185B2 (ja) * 1995-04-28 2006-06-21 アヴェンティス・リサーチ・ウント・テクノロジーズ・ゲーエムベーハー・ウント・コー・カーゲー 配線基板の配線の欠陥を検出する装置
JP2000508112A (ja) * 1996-04-03 2000-06-27 エコール ポリテクニーク フェデラル ドゥ ローザンヌ エレクトロルミネッセントデバイス
JPH09279135A (ja) * 1996-04-17 1997-10-28 Toyota Central Res & Dev Lab Inc 電界発光素子
US5714838A (en) * 1996-09-20 1998-02-03 International Business Machines Corporation Optically transparent diffusion barrier and top electrode in organic light emitting diode structures
US5991493A (en) 1996-12-13 1999-11-23 Corning Incorporated Optically transmissive bonding material
US6005692A (en) * 1997-05-29 1999-12-21 Stahl; Thomas D. Light-emitting diode constructions

Also Published As

Publication number Publication date
CN1303701C (zh) 2007-03-07
FI981731A0 (fi) 1998-08-11
FI981731A (fi) 2000-02-12
EP1110245B1 (de) 2009-12-30
JP2002522890A (ja) 2002-07-23
CN1312959A (zh) 2001-09-12
WO2000010206A2 (en) 2000-02-24
FI109944B (fi) 2002-10-31
US6586268B1 (en) 2003-07-01
EP1110245A2 (de) 2001-06-27
WO2000010206A3 (en) 2000-05-18

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