FI109944B - Optoelektroninen komponentti ja valmistusmenetelmä - Google Patents
Optoelektroninen komponentti ja valmistusmenetelmä Download PDFInfo
- Publication number
- FI109944B FI109944B FI981731A FI981731A FI109944B FI 109944 B FI109944 B FI 109944B FI 981731 A FI981731 A FI 981731A FI 981731 A FI981731 A FI 981731A FI 109944 B FI109944 B FI 109944B
- Authority
- FI
- Finland
- Prior art keywords
- component
- gel
- optical
- sol
- electrode
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title claims description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000463 material Substances 0.000 claims description 57
- 230000005855 radiation Effects 0.000 claims description 37
- 230000003287 optical effect Effects 0.000 claims description 34
- 239000011159 matrix material Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 23
- 229920000642 polymer Polymers 0.000 claims description 14
- 239000013543 active substance Substances 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 9
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical group [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 239000013307 optical fiber Substances 0.000 claims description 5
- 239000007791 liquid phase Substances 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000012071 phase Substances 0.000 claims description 3
- 239000003973 paint Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 239000011149 active material Substances 0.000 claims 1
- 230000003993 interaction Effects 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 239000002195 soluble material Substances 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 239000000499 gel Substances 0.000 description 61
- 239000011521 glass Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000010408 film Substances 0.000 description 11
- 239000000243 solution Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 230000005670 electromagnetic radiation Effects 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000011368 organic material Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- -1 poly (phenylene vinylene) Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 150000004703 alkoxides Chemical class 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229920000767 polyaniline Polymers 0.000 description 3
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 229910052760 oxygen Chemical group 0.000 description 2
- 239000001301 oxygen Chemical group 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920001197 polyacetylene Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910001410 inorganic ion Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- 238000010397 one-hybrid screening Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920002848 poly(3-alkoxythiophenes) Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000011540 sensing material Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI981731A FI109944B (fi) | 1998-08-11 | 1998-08-11 | Optoelektroninen komponentti ja valmistusmenetelmä |
| CNB998095060A CN1303701C (zh) | 1998-08-11 | 1999-08-10 | 光电元件及其制造方法 |
| DE69941874T DE69941874D1 (de) | 1998-08-11 | 1999-08-10 | Optielektronisches bauelement und herstellungsverfahren |
| PCT/FI1999/000663 WO2000010206A2 (en) | 1998-08-11 | 1999-08-10 | Optoelectronic component and manufacturing method |
| EP99938411A EP1110245B1 (de) | 1998-08-11 | 1999-08-10 | Optielektronisches bauelement und herstellungsverfahren |
| US09/762,635 US6586268B1 (en) | 1998-08-11 | 1999-08-10 | Optoelectronic component and manufacturing method |
| JP2000565570A JP2002522890A (ja) | 1998-08-11 | 1999-08-10 | 光電子部品およびその製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FI981731 | 1998-08-11 | ||
| FI981731A FI109944B (fi) | 1998-08-11 | 1998-08-11 | Optoelektroninen komponentti ja valmistusmenetelmä |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| FI981731A0 FI981731A0 (fi) | 1998-08-11 |
| FI981731A FI981731A (fi) | 2000-02-12 |
| FI109944B true FI109944B (fi) | 2002-10-31 |
Family
ID=8552288
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI981731A FI109944B (fi) | 1998-08-11 | 1998-08-11 | Optoelektroninen komponentti ja valmistusmenetelmä |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6586268B1 (de) |
| EP (1) | EP1110245B1 (de) |
| JP (1) | JP2002522890A (de) |
| CN (1) | CN1303701C (de) |
| DE (1) | DE69941874D1 (de) |
| FI (1) | FI109944B (de) |
| WO (1) | WO2000010206A2 (de) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI110675B (fi) * | 2001-07-06 | 2003-03-14 | Valtion Teknillinen | Menetelmä orgaanisen valoa emittoivan diodin muokkaamiseksi |
| KR100581850B1 (ko) * | 2002-02-27 | 2006-05-22 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치와 그 제조 방법 |
| US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
| US7417247B2 (en) * | 2002-09-30 | 2008-08-26 | Infineon Technologies, Ag | Pentaarylcyclopentadienyl units as active units in resistive memory elements |
| US8349241B2 (en) | 2002-10-04 | 2013-01-08 | Molecular Imprints, Inc. | Method to arrange features on a substrate to replicate features having minimal dimensional variability |
| US7579775B2 (en) * | 2004-12-11 | 2009-08-25 | Samsung Mobile Display Co., Ltd. | Electroluminescence display device with improved external light coupling efficiency and method of manufacturing the same |
| US7906058B2 (en) | 2005-12-01 | 2011-03-15 | Molecular Imprints, Inc. | Bifurcated contact printing technique |
| US7803308B2 (en) | 2005-12-01 | 2010-09-28 | Molecular Imprints, Inc. | Technique for separating a mold from solidified imprinting material |
| WO2007067488A2 (en) | 2005-12-08 | 2007-06-14 | Molecular Imprints, Inc. | Method and system for double-sided patterning of substrates |
| US7670530B2 (en) | 2006-01-20 | 2010-03-02 | Molecular Imprints, Inc. | Patterning substrates employing multiple chucks |
| US8142850B2 (en) | 2006-04-03 | 2012-03-27 | Molecular Imprints, Inc. | Patterning a plurality of fields on a substrate to compensate for differing evaporation times |
| US7802978B2 (en) | 2006-04-03 | 2010-09-28 | Molecular Imprints, Inc. | Imprinting of partial fields at the edge of the wafer |
| US8850980B2 (en) | 2006-04-03 | 2014-10-07 | Canon Nanotechnologies, Inc. | Tessellated patterns in imprint lithography |
| KR20090003153A (ko) * | 2006-04-03 | 2009-01-09 | 몰레큘러 임프린츠 인코퍼레이티드 | 다수의 필드와 정렬 마크를 갖는 기판을 동시에 패턴화하는방법 |
| US8012395B2 (en) | 2006-04-18 | 2011-09-06 | Molecular Imprints, Inc. | Template having alignment marks formed of contrast material |
| KR101014339B1 (ko) | 2008-01-10 | 2011-02-15 | 고려대학교 산학협력단 | 발광 효율이 향상된 질화물 발광 소자 및 그 제조 방법 |
| JP2010034494A (ja) * | 2008-06-30 | 2010-02-12 | Sumitomo Chemical Co Ltd | 有機光電変換素子 |
| US9520378B2 (en) * | 2012-12-21 | 2016-12-13 | Intel Corporation | Thermal matched composite die |
| CN107731864B (zh) * | 2017-11-20 | 2020-06-12 | 开发晶照明（厦门）有限公司 | 微发光二极管显示器和制作方法 |
| WO2020193870A1 (en) * | 2019-03-28 | 2020-10-01 | Koite Health Oy | Method for plaque detection |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5130397A (en) * | 1990-02-13 | 1992-07-14 | The United States Of America As Represented By The United States Department Of Energy | Hybrid sol-gel optical materials |
| US5608287A (en) * | 1995-02-23 | 1997-03-04 | Eastman Kodak Company | Conductive electron injector for light-emitting diodes |
| JP3787185B2 (ja) * | 1995-04-28 | 2006-06-21 | アヴェンティス・リサーチ・ウント・テクノロジーズ・ゲーエムベーハー・ウント・コー・カーゲー | 配線基板の配線の欠陥を検出する装置 |
| DE69700602T2 (de) * | 1996-04-03 | 2000-05-18 | Ecole Polytech | Elektrolumineszierte vorrichtung |
| JPH09279135A (ja) | 1996-04-17 | 1997-10-28 | Toyota Central Res & Dev Lab Inc | 電界発光素子 |
| US5714838A (en) * | 1996-09-20 | 1998-02-03 | International Business Machines Corporation | Optically transparent diffusion barrier and top electrode in organic light emitting diode structures |
| US5991493A (en) | 1996-12-13 | 1999-11-23 | Corning Incorporated | Optically transmissive bonding material |
| US6005692A (en) * | 1997-05-29 | 1999-12-21 | Stahl; Thomas D. | Light-emitting diode constructions |
-
1998
- 1998-08-11 FI FI981731A patent/FI109944B/fi active
-
1999
- 1999-08-10 EP EP99938411A patent/EP1110245B1/de not_active Expired - Lifetime
- 1999-08-10 WO PCT/FI1999/000663 patent/WO2000010206A2/en active Application Filing
- 1999-08-10 JP JP2000565570A patent/JP2002522890A/ja active Pending
- 1999-08-10 US US09/762,635 patent/US6586268B1/en not_active Expired - Fee Related
- 1999-08-10 CN CNB998095060A patent/CN1303701C/zh not_active Expired - Fee Related
- 1999-08-10 DE DE69941874T patent/DE69941874D1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1110245B1 (de) | 2009-12-30 |
| JP2002522890A (ja) | 2002-07-23 |
| CN1312959A (zh) | 2001-09-12 |
| US6586268B1 (en) | 2003-07-01 |
| CN1303701C (zh) | 2007-03-07 |
| FI981731A0 (fi) | 1998-08-11 |
| FI981731A (fi) | 2000-02-12 |
| EP1110245A2 (de) | 2001-06-27 |
| DE69941874D1 (de) | 2010-02-11 |
| WO2000010206A3 (en) | 2000-05-18 |
| WO2000010206A2 (en) | 2000-02-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GB | Transfer or assigment of application |
Owner name: VALTION TEKNILLINEN TUTKIMUSKESKUS |