DE60042866D1 - Niederspannungs-MOS-Anordnung und entsprechendes Herstellungsverfahren - Google Patents
Niederspannungs-MOS-Anordnung und entsprechendes HerstellungsverfahrenInfo
- Publication number
- DE60042866D1 DE60042866D1 DE60042866T DE60042866T DE60042866D1 DE 60042866 D1 DE60042866 D1 DE 60042866D1 DE 60042866 T DE60042866 T DE 60042866T DE 60042866 T DE60042866 T DE 60042866T DE 60042866 D1 DE60042866 D1 DE 60042866D1
- Authority
- DE
- Germany
- Prior art keywords
- low
- voltage mos
- corresponding manufacturing
- mos arrangement
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
- H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
- H01L29/0873—Drain regions
- H01L29/0878—Impurity concentration or distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/324,553 US6137139A (en) | 1999-06-03 | 1999-06-03 | Low voltage dual-well MOS device having high ruggedness, low on-resistance, and improved body diode reverse recovery |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60042866D1 true DE60042866D1 (de) | 2009-10-15 |
Family
ID=23264106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60042866T Expired - Fee Related DE60042866D1 (de) | 1999-06-03 | 2000-05-25 | Niederspannungs-MOS-Anordnung und entsprechendes Herstellungsverfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US6137139A (de) |
EP (1) | EP1058317B8 (de) |
JP (1) | JP2001015755A (de) |
KR (1) | KR100660764B1 (de) |
DE (1) | DE60042866D1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE510300T1 (de) * | 1999-03-04 | 2011-06-15 | Infineon Technologies Ag | Verfahren zur herstellung einer vertikalen mos- transistoranordnung |
WO2002013235A2 (en) * | 2000-08-08 | 2002-02-14 | Advanced Power Technology, Inc. | Power mos device with asymmetrical channel structure |
US6552391B2 (en) * | 2001-01-22 | 2003-04-22 | Fairchild Semiconductor Corporation | Low voltage dual-well trench MOS device |
US7221010B2 (en) * | 2002-12-20 | 2007-05-22 | Cree, Inc. | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
US7074643B2 (en) | 2003-04-24 | 2006-07-11 | Cree, Inc. | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
US6979863B2 (en) | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
US7118970B2 (en) | 2004-06-22 | 2006-10-10 | Cree, Inc. | Methods of fabricating silicon carbide devices with hybrid well regions |
US7498633B2 (en) * | 2005-01-21 | 2009-03-03 | Purdue Research Foundation | High-voltage power semiconductor device |
US7414268B2 (en) | 2005-05-18 | 2008-08-19 | Cree, Inc. | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities |
US7615801B2 (en) | 2005-05-18 | 2009-11-10 | Cree, Inc. | High voltage silicon carbide devices having bi-directional blocking capabilities |
US7528040B2 (en) | 2005-05-24 | 2009-05-05 | Cree, Inc. | Methods of fabricating silicon carbide devices having smooth channels |
US7728402B2 (en) | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
CN101501859B (zh) | 2006-08-17 | 2011-05-25 | 克里公司 | 高功率绝缘栅双极晶体管 |
US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
ES2364870T3 (es) * | 2008-12-12 | 2011-09-15 | Abb Technology Ag | Método para la fabricación de un dispositivo semiconductor de energía. |
US8288220B2 (en) | 2009-03-27 | 2012-10-16 | Cree, Inc. | Methods of forming semiconductor devices including epitaxial layers and related structures |
US8294507B2 (en) | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
US8629509B2 (en) | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
US8541787B2 (en) | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
EP2754177A1 (de) | 2011-09-11 | 2014-07-16 | Cree, Inc. | Strommodul mit hoher stromdichte und transistoren mit verbesserter konzeption |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
CN106684001A (zh) * | 2016-12-14 | 2017-05-17 | 中国电子科技集团公司第四十七研究所 | 双阈值vdmos器件的制作方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
US5091336A (en) * | 1985-09-09 | 1992-02-25 | Harris Corporation | Method of making a high breakdown active device structure with low series resistance |
US4975751A (en) * | 1985-09-09 | 1990-12-04 | Harris Corporation | High breakdown active device structure with low series resistance |
IT1247293B (it) * | 1990-05-09 | 1994-12-12 | Int Rectifier Corp | Dispositivo transistore di potenza presentante una regione ultra-profonda, a maggior concentrazione |
US5483087A (en) * | 1994-07-08 | 1996-01-09 | International Rectifier Corporation | Bidirectional thyristor with MOS turn-off capability with a single gate |
DE69512021T2 (de) * | 1995-03-31 | 2000-05-04 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | DMOS-Anordnung-Struktur und Verfahren zur Herstellung |
JPH10242458A (ja) * | 1997-02-25 | 1998-09-11 | Toshiba Corp | 半導体装置 |
US5925910A (en) * | 1997-03-28 | 1999-07-20 | Stmicroelectronics, Inc. | DMOS transistors with schottky diode body structure |
-
1999
- 1999-06-03 US US09/324,553 patent/US6137139A/en not_active Expired - Lifetime
-
2000
- 2000-05-25 DE DE60042866T patent/DE60042866D1/de not_active Expired - Fee Related
- 2000-05-25 EP EP00401471A patent/EP1058317B8/de not_active Expired - Lifetime
- 2000-06-01 JP JP2000164444A patent/JP2001015755A/ja active Pending
- 2000-06-03 KR KR1020000030639A patent/KR100660764B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US6137139A (en) | 2000-10-24 |
EP1058317B1 (de) | 2009-09-02 |
JP2001015755A (ja) | 2001-01-19 |
EP1058317A3 (de) | 2002-11-13 |
EP1058317A2 (de) | 2000-12-06 |
EP1058317B8 (de) | 2009-11-04 |
KR100660764B1 (ko) | 2006-12-26 |
KR20010007229A (ko) | 2001-01-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: FAIRCHILD SEMICONDUCTOR CORP., SOUTH PORTLAND,, US |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |