IT1220185B - Sistema antisaturazione per transistore pnp verticale a collettore isolato e struttura integrata di quest'ultimo - Google Patents

Sistema antisaturazione per transistore pnp verticale a collettore isolato e struttura integrata di quest'ultimo

Info

Publication number
IT1220185B
IT1220185B IT83666/87A IT8366687A IT1220185B IT 1220185 B IT1220185 B IT 1220185B IT 83666/87 A IT83666/87 A IT 83666/87A IT 8366687 A IT8366687 A IT 8366687A IT 1220185 B IT1220185 B IT 1220185B
Authority
IT
Italy
Prior art keywords
integrated structure
pnp transistor
vertical pnp
saturation system
isolated collector
Prior art date
Application number
IT83666/87A
Other languages
English (en)
Other versions
IT8783666A0 (it
Inventor
Franco Bertotti
Paolo Ferrari
Maria Teresa Gatti
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT83666/87A priority Critical patent/IT1220185B/it
Publication of IT8783666A0 publication Critical patent/IT8783666A0/it
Priority to EP88830424A priority patent/EP0313526B1/en
Priority to DE8888830424T priority patent/DE3881148T2/de
Priority to US07/260,236 priority patent/US4887141A/en
Priority to JP63265211A priority patent/JPH01129458A/ja
Application granted granted Critical
Publication of IT1220185B publication Critical patent/IT1220185B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
IT83666/87A 1987-10-21 1987-10-21 Sistema antisaturazione per transistore pnp verticale a collettore isolato e struttura integrata di quest'ultimo IT1220185B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT83666/87A IT1220185B (it) 1987-10-21 1987-10-21 Sistema antisaturazione per transistore pnp verticale a collettore isolato e struttura integrata di quest'ultimo
EP88830424A EP0313526B1 (en) 1987-10-21 1988-10-18 Saturation limiting system for a vertical, isolated collector pnp transistor and monolithically integrated structure thereof
DE8888830424T DE3881148T2 (de) 1987-10-21 1988-10-18 Saettigungsbegrenzendes system fuer einen pnp-vertikaltransistor mit isoliertem kollektor und einer monolitisch integrierten struktur.
US07/260,236 US4887141A (en) 1987-10-21 1988-10-19 Saturation limiting system for a vertical, isolated collector PNP transistor and monolithically integrated structure thereof
JP63265211A JPH01129458A (ja) 1987-10-21 1988-10-20 分離されたコレクタを有する縦型ｐｎｐトランジスタ用の飽和制限システム及びモノリチックに集積されたその構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT83666/87A IT1220185B (it) 1987-10-21 1987-10-21 Sistema antisaturazione per transistore pnp verticale a collettore isolato e struttura integrata di quest'ultimo

Publications (2)

Publication Number Publication Date
IT8783666A0 IT8783666A0 (it) 1987-10-21
IT1220185B true IT1220185B (it) 1990-06-06

Family

ID=11323734

Family Applications (1)

Application Number Title Priority Date Filing Date
IT83666/87A IT1220185B (it) 1987-10-21 1987-10-21 Sistema antisaturazione per transistore pnp verticale a collettore isolato e struttura integrata di quest'ultimo

Country Status (5)

Country Link
US (1) US4887141A (it)
EP (1) EP0313526B1 (it)
JP (1) JPH01129458A (it)
DE (1) DE3881148T2 (it)
IT (1) IT1220185B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1215792B (it) * 1988-02-04 1990-02-22 Sgs Thomson Microelectronics Transistore di tipo pnp verticale a collettore isolato con dispositivo per eliminare l'effetto di componenti parassiti di giunzione.
EP0451423A1 (en) * 1990-04-10 1991-10-16 International Business Machines Corporation Vertical isolated-collector PNP transistor structure
GB9013926D0 (en) * 1990-06-22 1990-08-15 Gen Electric Co Plc A vertical pnp transistor
WO1993018550A1 (en) * 1992-03-10 1993-09-16 Analog Devices, Inc. A circuit construction for protective biasing
JPH07505014A (ja) * 1992-03-10 1995-06-01 アナログ・ディバイセス・インコーポレーテッド トランジスタの飽和を制御する回路構造
US5408122A (en) * 1993-12-01 1995-04-18 Eastman Kodak Company Vertical structure to minimize settling times for solid state light detectors
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
US5777352A (en) * 1996-09-19 1998-07-07 Eastman Kodak Company Photodetector structure
JP2005123279A (ja) * 2003-10-15 2005-05-12 Mitsumi Electric Co Ltd 半導体装置の製造方法
JP5048242B2 (ja) * 2005-11-30 2012-10-17 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
CN111430447B (zh) * 2019-02-25 2023-02-28 合肥晶合集成电路股份有限公司 电流源及其形成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930909A (en) * 1966-10-21 1976-01-06 U.S. Philips Corporation Method of manufacturing a semiconductor device utilizing simultaneous outdiffusion during epitaxial growth
US3502951A (en) * 1968-01-02 1970-03-24 Singer Co Monolithic complementary semiconductor device
US4038680A (en) * 1972-12-29 1977-07-26 Sony Corporation Semiconductor integrated circuit device
US4291319A (en) * 1976-05-19 1981-09-22 National Semiconductor Corporation Open base bipolar transistor protective device
GB2043337B (en) * 1978-12-06 1983-01-26 Toko Inc Semiconductor integrated circuit devices
JPS5730359A (en) * 1980-07-30 1982-02-18 Nec Corp Semiconductor device
JPS57162365A (en) * 1981-03-30 1982-10-06 Toshiba Corp Semiconductor device
JPS6170758A (ja) * 1984-09-06 1986-04-11 シーメンス、アクチエンゲゼルシヤフト トランジスタ構造

Also Published As

Publication number Publication date
EP0313526B1 (en) 1993-05-19
US4887141A (en) 1989-12-12
EP0313526A1 (en) 1989-04-26
IT8783666A0 (it) 1987-10-21
DE3881148D1 (de) 1993-06-24
JPH01129458A (ja) 1989-05-22
DE3881148T2 (de) 1993-09-02

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971030