DE69320464T2 - Schaltungsanordnung zur kontrolle der sättigung eines transistors. - Google Patents

Schaltungsanordnung zur kontrolle der sättigung eines transistors.

Info

Publication number
DE69320464T2
DE69320464T2 DE69320464T DE69320464T DE69320464T2 DE 69320464 T2 DE69320464 T2 DE 69320464T2 DE 69320464 T DE69320464 T DE 69320464T DE 69320464 T DE69320464 T DE 69320464T DE 69320464 T2 DE69320464 T2 DE 69320464T2
Authority
DE
Germany
Prior art keywords
saturation
transistor
controlling
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69320464T
Other languages
English (en)
Other versions
DE69320464D1 (de
Inventor
Santos Francisco Jose Carv Dos
Larry Devito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Analog Devices Inc
Original Assignee
Analog Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Analog Devices Inc filed Critical Analog Devices Inc
Publication of DE69320464D1 publication Critical patent/DE69320464D1/de
Application granted granted Critical
Publication of DE69320464T2 publication Critical patent/DE69320464T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
DE69320464T 1992-03-10 1993-03-10 Schaltungsanordnung zur kontrolle der sättigung eines transistors. Expired - Lifetime DE69320464T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US84728192A 1992-03-10 1992-03-10
PCT/US1993/002148 WO1993018552A1 (en) 1992-03-10 1993-03-10 Circuit construction for controlling saturation of a transistor

Publications (2)

Publication Number Publication Date
DE69320464D1 DE69320464D1 (de) 1998-09-24
DE69320464T2 true DE69320464T2 (de) 1998-12-24

Family

ID=25300261

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69320464T Expired - Lifetime DE69320464T2 (de) 1992-03-10 1993-03-10 Schaltungsanordnung zur kontrolle der sättigung eines transistors.

Country Status (5)

Country Link
US (2) US5418386A (de)
EP (1) EP0630523B1 (de)
JP (1) JPH07505014A (de)
DE (1) DE69320464T2 (de)
WO (1) WO1993018552A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993018552A1 (en) * 1992-03-10 1993-09-16 Analog Devices, Inc. Circuit construction for controlling saturation of a transistor
US5508551A (en) * 1994-03-02 1996-04-16 Harris Corporation Current mirror with saturation limiting
DE4411869C2 (de) * 1994-04-06 1997-05-15 Siemens Ag Schaltungsanordnung mit einer integrierten Treiberschaltungsanordnung
EP0954094B1 (de) * 1998-04-30 2007-12-19 Nxp B.V. Verstärkerausgangsstufe mit Begrenzer für parasitäre Ströme
JP3761162B2 (ja) * 2002-03-27 2006-03-29 ローム株式会社 バイポーラトランジスタ及びこれを用いた半導体装置
CN101350304B (zh) * 2007-07-17 2010-09-29 上海华虹Nec电子有限公司 寄生npn晶体管制造方法及结构

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609413A (en) * 1969-11-03 1971-09-28 Fairchild Camera Instr Co Circuit for the protection of monolithic silicon-controlled rectifiers from false triggering
DE3361832D1 (en) * 1982-04-19 1986-02-27 Matsushita Electric Ind Co Ltd Semiconductor ic and method of making the same
US4969823A (en) * 1986-09-26 1990-11-13 Analog Devices, Incorporated Integrated circuit with complementary junction-isolated bipolar transistors and method of making same
US5065214A (en) * 1986-09-26 1991-11-12 Analog Devices, Incorporated Integrated circuit with complementary junction-isolated bipolar transistors
IT1220185B (it) * 1987-10-21 1990-06-06 Sgs Microelettronica Spa Sistema antisaturazione per transistore pnp verticale a collettore isolato e struttura integrata di quest'ultimo
IT1227430B (it) * 1988-07-22 1991-04-11 Sgs Thomson Microelectronics Circuito a pompa di carica a induttanza e capacita' per il pilotaggio di ponti a transistori mos di potenza.
IT1228842B (it) * 1989-02-21 1991-07-05 Sgs Thomson Microelectronics Circuito per la regolazione della corrente di base di un dispositivo di potenza a semiconduttore.
IT1251011B (it) * 1991-02-18 1995-04-28 Sgs Thomson Microelectronics Dispositivo di controllo di corrente particolarmente per circuiti di potenza in tecnologia mos
US5179432A (en) * 1991-08-15 1993-01-12 Micrel, Inc. Integrated PNP power bipolar transistor with low injection into substrate
WO1993018552A1 (en) * 1992-03-10 1993-09-16 Analog Devices, Inc. Circuit construction for controlling saturation of a transistor

Also Published As

Publication number Publication date
WO1993018552A1 (en) 1993-09-16
DE69320464D1 (de) 1998-09-24
JPH07505014A (ja) 1995-06-01
EP0630523B1 (de) 1998-08-19
US5418386A (en) 1995-05-23
EP0630523A1 (de) 1994-12-28
US5545918A (en) 1996-08-13

Similar Documents

Publication Publication Date Title
DE69330542T2 (de) Halbleitertransistor
DE69223706T2 (de) Feldeffekttransistor
ATE156838T1 (de) Neue 7-beta-substituierte-4-aza-5-alpha-androstan-3- nen als inhibitoren 5-alpha-reduktases
ATE158300T1 (de) Neue 7-beta-substituierte-4-aza-5-alpha-cholestan-on n als inhibitoren 5-alpha-reduktases
DE69410067D1 (de) Transistorschaltung
DE69116076D1 (de) Heterostruktur-Feldeffekttransistor
DE69326340T2 (de) Geräuscharmer pnp-Transistor
DE69107382D1 (de) Einrichtung zur Kontrolle der Dynamik eines Fahrzeuges.
DE69317728D1 (de) Schaltungsanordnung zum Steuern eines MOS-Feldeffekttransistors
FI934156A0 (fi) Valsanordning foer att finfoerdela plast
DE69109238D1 (de) Feldeffekttransistor.
ATE129789T1 (de) Ventiloberteil.
FI914170A0 (fi) Elektronisk anordning foer reglering av isytan vid en uppsamlingsbehaollare vid en isbitsmaskin.
DE69320464D1 (de) Schaltungsanordnung zur kontrolle der sättigung eines transistors.
DE69130213T2 (de) Schaltung zur verhinderung der sättigung eines transistors
DE69227244D1 (de) Sättigungssteuerung eines integrierten bipolaren Transistors
DE3673509D1 (de) Feldeffekttransistorverstaerkerschaltungen.
DE69319966D1 (de) Nichtlineare Verstärkungsregelung für PLL-Schaltungen
DE69306494D1 (de) Transistorschaltung zum Halten des Maximal-/Minimalwertes eines Signales
DE69406722D1 (de) Heteroübergang-Bipolartransistor
DE69330080T2 (de) Gerät zur Bearbeitung der Sprache
DE69208297T2 (de) Feldeffekttransistor
DE69317206D1 (de) Schaltungsanordnung zum kontrollierten Abschalten eines MOS-Feldeffekttransistors
DE69201708T2 (de) Feldeffekttransistor.
DE69332112T2 (de) Verbesserter biolarer Transistor

Legal Events

Date Code Title Description
8364 No opposition during term of opposition