DE69116076D1 - Heterostruktur-Feldeffekttransistor - Google Patents

Heterostruktur-Feldeffekttransistor

Info

Publication number
DE69116076D1
DE69116076D1 DE69116076T DE69116076T DE69116076D1 DE 69116076 D1 DE69116076 D1 DE 69116076D1 DE 69116076 T DE69116076 T DE 69116076T DE 69116076 T DE69116076 T DE 69116076T DE 69116076 D1 DE69116076 D1 DE 69116076D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
heterostructure field
heterostructure
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69116076T
Other languages
English (en)
Other versions
DE69116076T2 (de
Inventor
Stephen John Battersby
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Application granted granted Critical
Publication of DE69116076D1 publication Critical patent/DE69116076D1/de
Publication of DE69116076T2 publication Critical patent/DE69116076T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69116076T 1990-10-19 1991-10-10 Heterostruktur-Feldeffekttransistor Expired - Fee Related DE69116076T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9022756A GB2248966A (en) 1990-10-19 1990-10-19 Field effect semiconductor devices

Publications (2)

Publication Number Publication Date
DE69116076D1 true DE69116076D1 (de) 1996-02-15
DE69116076T2 DE69116076T2 (de) 1996-08-08

Family

ID=10684005

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69116076T Expired - Fee Related DE69116076T2 (de) 1990-10-19 1991-10-10 Heterostruktur-Feldeffekttransistor

Country Status (5)

Country Link
US (1) US5254863A (de)
EP (1) EP0481555B1 (de)
JP (1) JPH0831596B2 (de)
DE (1) DE69116076T2 (de)
GB (1) GB2248966A (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523593A (en) * 1992-03-30 1996-06-04 Hitachi, Ltd. Compound semiconductor integrated circuit and optical regenerative repeater using the same
FR2689683B1 (fr) * 1992-04-07 1994-05-20 Thomson Composants Microondes Dispositif semiconducteur a transistors complementaires.
FR2690286A1 (fr) * 1992-04-17 1993-10-22 Commissariat Energie Atomique Cavité laser à hétérostructure semi-conductrice dissymétrique et laser équipé de cette cavité.
US5432356A (en) * 1993-04-02 1995-07-11 Fujitsu Limited Semiconductor heterojunction floating layer memory device and method for storing information in the same
GB2351390A (en) * 1999-06-16 2000-12-27 Sharp Kk A semiconductor material comprising two dopants
US6414340B1 (en) * 1999-11-04 2002-07-02 Raytheon Company Field effect transistor and method for making the same
US6992319B2 (en) * 2000-07-18 2006-01-31 Epitaxial Technologies Ultra-linear multi-channel field effect transistor
JP2004103656A (ja) * 2002-09-05 2004-04-02 Sony Corp 半導体装置及び半導体装置の製造方法
CN101432936B (zh) * 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
JP4333652B2 (ja) * 2005-08-17 2009-09-16 沖電気工業株式会社 オーミック電極、オーミック電極の製造方法、電界効果型トランジスタ、電界効果型トランジスタの製造方法、および、半導体装置
EP2074662A1 (de) * 2006-10-05 2009-07-01 Nxp B.V. Tunnel-feldeffekttransistor
JP4794656B2 (ja) * 2009-06-11 2011-10-19 シャープ株式会社 半導体装置
US8324661B2 (en) * 2009-12-23 2012-12-04 Intel Corporation Quantum well transistors with remote counter doping
US8680536B2 (en) * 2012-05-23 2014-03-25 Hrl Laboratories, Llc Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices
US9379195B2 (en) 2012-05-23 2016-06-28 Hrl Laboratories, Llc HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
US9000484B2 (en) 2012-05-23 2015-04-07 Hrl Laboratories, Llc Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask
US10700201B2 (en) 2012-05-23 2020-06-30 Hrl Laboratories, Llc HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
US9099490B2 (en) * 2012-09-28 2015-08-04 Intel Corporation Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
CN111430238B (zh) * 2020-04-09 2020-12-22 浙江大学 提高二维电子气的GaN器件结构的制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4194935A (en) * 1978-04-24 1980-03-25 Bell Telephone Laboratories, Incorporated Method of making high mobility multilayered heterojunction devices employing modulated doping
JPS58143572A (ja) * 1982-02-22 1983-08-26 Nippon Telegr & Teleph Corp <Ntt> 電界効果トランジスタ
JPS5963769A (ja) * 1982-10-05 1984-04-11 Agency Of Ind Science & Technol 高速半導体素子
JPS6012775A (ja) * 1983-07-02 1985-01-23 Agency Of Ind Science & Technol 電界効果トランジスタ
JPS6039869A (ja) * 1983-08-12 1985-03-01 Agency Of Ind Science & Technol 半導体超格子構造
JPS62256478A (ja) * 1986-04-30 1987-11-09 Sumitomo Electric Ind Ltd 化合物半導体装置
JPS62291974A (ja) * 1986-06-12 1987-12-18 Matsushita Electric Ind Co Ltd 半導体装置
JPS63170A (ja) * 1986-06-19 1988-01-05 Fujitsu Ltd 半導体装置
JPH0666334B2 (ja) * 1987-02-10 1994-08-24 日本電気株式会社 電界効果トランジスタ
JPS6431470A (en) * 1987-07-27 1989-02-01 Nec Corp Field effect transistor
JPH01114082A (ja) * 1987-10-28 1989-05-02 Hitachi Ltd 光検出器
JPH0682691B2 (ja) * 1987-11-12 1994-10-19 松下電器産業株式会社 電界効果型トランジスタ
GB2219130A (en) * 1988-05-25 1989-11-29 Philips Electronic Associated A high mobility semiconductor device
JPH02202029A (ja) * 1989-01-31 1990-08-10 Sony Corp 化合物半導体装置
JPH02231733A (ja) * 1989-03-03 1990-09-13 Sharp Corp 半導体装置
JPH03171636A (ja) * 1989-11-29 1991-07-25 Oki Electric Ind Co Ltd 電界効果トランジスタ
US5038187A (en) * 1989-12-01 1991-08-06 Hewlett-Packard Company Pseudomorphic MODFET structure having improved linear power performance at microwave frequencies
US5049951A (en) * 1990-12-20 1991-09-17 Motorola, Inc. Superlattice field effect transistor with monolayer confinement

Also Published As

Publication number Publication date
EP0481555B1 (de) 1996-01-03
US5254863A (en) 1993-10-19
DE69116076T2 (de) 1996-08-08
JPH04260339A (ja) 1992-09-16
GB2248966A (en) 1992-04-22
EP0481555A1 (de) 1992-04-22
JPH0831596B2 (ja) 1996-03-27
GB9022756D0 (en) 1990-12-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee