DE69311093T2 - Feldeffekttransistor - Google Patents

Feldeffekttransistor

Info

Publication number
DE69311093T2
DE69311093T2 DE1993611093 DE69311093T DE69311093T2 DE 69311093 T2 DE69311093 T2 DE 69311093T2 DE 1993611093 DE1993611093 DE 1993611093 DE 69311093 T DE69311093 T DE 69311093T DE 69311093 T2 DE69311093 T2 DE 69311093T2
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1993611093
Other languages
English (en)
Other versions
DE69311093D1 (de
Inventor
Masayuki Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE69311093D1 publication Critical patent/DE69311093D1/de
Application granted granted Critical
Publication of DE69311093T2 publication Critical patent/DE69311093T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE1993611093 1993-03-30 1993-09-08 Feldeffekttransistor Expired - Fee Related DE69311093T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7138093A JPH06283553A (ja) 1993-03-30 1993-03-30 電界効果トランジスタ、及びその製造方法

Publications (2)

Publication Number Publication Date
DE69311093D1 DE69311093D1 (de) 1997-07-03
DE69311093T2 true DE69311093T2 (de) 1997-12-04

Family

ID=13458847

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1993611093 Expired - Fee Related DE69311093T2 (de) 1993-03-30 1993-09-08 Feldeffekttransistor

Country Status (3)

Country Link
EP (1) EP0622852B1 (de)
JP (1) JPH06283553A (de)
DE (1) DE69311093T2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000349096A (ja) 1999-06-01 2000-12-15 Matsushita Electric Ind Co Ltd 化合物電界効果トランジスタおよびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394674A (en) * 1979-10-09 1983-07-19 Nippon Electric Co., Ltd. Insulated gate field effect transistor
US4636822A (en) * 1984-08-27 1987-01-13 International Business Machines Corporation GaAs short channel lightly doped drain MESFET structure and fabrication
JPS6459961A (en) * 1987-08-31 1989-03-07 Toshiba Corp Semiconductor device
JPH0366167A (ja) * 1989-08-04 1991-03-20 Nippon Telegr & Teleph Corp <Ntt> 電界効果型半導体装置
JPH0475387A (ja) * 1990-07-18 1992-03-10 Sony Corp Ｍｉｓ型半導体装置

Also Published As

Publication number Publication date
EP0622852A1 (de) 1994-11-02
JPH06283553A (ja) 1994-10-07
DE69311093D1 (de) 1997-07-03
EP0622852B1 (de) 1997-05-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee