DE69117441T2 - Feldeffektransistor - Google Patents

Feldeffektransistor

Info

Publication number
DE69117441T2
DE69117441T2 DE69117441T DE69117441T DE69117441T2 DE 69117441 T2 DE69117441 T2 DE 69117441T2 DE 69117441 T DE69117441 T DE 69117441T DE 69117441 T DE69117441 T DE 69117441T DE 69117441 T2 DE69117441 T2 DE 69117441T2
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69117441T
Other languages
English (en)
Other versions
DE69117441D1 (de
Inventor
Sigeru C O Yokohama W Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69117441D1 publication Critical patent/DE69117441D1/de
Publication of DE69117441T2 publication Critical patent/DE69117441T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69117441T 1990-11-16 1991-11-15 Feldeffektransistor Expired - Fee Related DE69117441T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2311061A JP2553760B2 (ja) 1990-11-16 1990-11-16 高電子移動度トランジスタ

Publications (2)

Publication Number Publication Date
DE69117441D1 DE69117441D1 (de) 1996-04-04
DE69117441T2 true DE69117441T2 (de) 1996-10-31

Family

ID=18012644

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69117441T Expired - Fee Related DE69117441T2 (de) 1990-11-16 1991-11-15 Feldeffektransistor

Country Status (5)

Country Link
US (1) US5473177A (de)
EP (1) EP0486063B1 (de)
JP (1) JP2553760B2 (de)
CA (1) CA2055665C (de)
DE (1) DE69117441T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2661556B2 (ja) * 1994-07-25 1997-10-08 日本電気株式会社 電界効果型半導体装置
JP4220683B2 (ja) * 2001-03-27 2009-02-04 パナソニック株式会社 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2600708B2 (ja) * 1987-09-07 1997-04-16 富士通株式会社 ヘテロ接合ｆｅｔ
JPH0770743B2 (ja) * 1987-11-10 1995-07-31 富士通株式会社 共鳴トンネリングバリア構造デバイス
JPH01143264A (ja) * 1987-11-28 1989-06-05 Sharp Corp 電界効果半導体素子
JP2652647B2 (ja) * 1988-01-19 1997-09-10 住友電気工業株式会社 ヘテロ接合電界効果トランジスタ
JPH0283038A (ja) * 1988-09-20 1990-03-23 Union Carbide Corp 改善された選択率を有するコバルトフィッシャー‐トロプシュ触媒
JPH02130933A (ja) * 1988-11-11 1990-05-18 Nec Corp 電界効果トランジスタ
EP0400399A3 (de) * 1989-05-31 1991-05-29 Siemens Aktiengesellschaft Monolithisch integrierte Photodiode-FET-Kombination
JPH0355851A (ja) * 1989-07-25 1991-03-11 Nippon Mining Co Ltd 半導体装置
JPH03104126A (ja) * 1989-09-18 1991-05-01 Fujitsu Ltd 化合物半導体装置
JPH0812916B2 (ja) * 1989-12-20 1996-02-07 日本電気株式会社 電界効果トランジスタ

Also Published As

Publication number Publication date
EP0486063A2 (de) 1992-05-20
CA2055665A1 (en) 1992-05-17
JPH04181743A (ja) 1992-06-29
US5473177A (en) 1995-12-05
DE69117441D1 (de) 1996-04-04
EP0486063B1 (de) 1996-02-28
JP2553760B2 (ja) 1996-11-13
CA2055665C (en) 2001-07-24
EP0486063A3 (en) 1992-11-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee