DE69127849T2 - Bipolarer Transistor - Google Patents

Bipolarer Transistor

Info

Publication number
DE69127849T2
DE69127849T2 DE69127849T DE69127849T DE69127849T2 DE 69127849 T2 DE69127849 T2 DE 69127849T2 DE 69127849 T DE69127849 T DE 69127849T DE 69127849 T DE69127849 T DE 69127849T DE 69127849 T2 DE69127849 T2 DE 69127849T2
Authority
DE
Germany
Prior art keywords
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69127849T
Other languages
English (en)
Other versions
DE69127849D1 (de
Inventor
Hiroshi Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2102143A external-priority patent/JP3046320B2/ja
Priority claimed from JP2249088A external-priority patent/JP3030070B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69127849D1 publication Critical patent/DE69127849D1/de
Application granted granted Critical
Publication of DE69127849T2 publication Critical patent/DE69127849T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE69127849T 1990-04-18 1991-04-17 Bipolarer Transistor Expired - Fee Related DE69127849T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2102143A JP3046320B2 (ja) 1990-04-18 1990-04-18 半導体装置
JP2249088A JP3030070B2 (ja) 1990-09-19 1990-09-19 半導体装置

Publications (2)

Publication Number Publication Date
DE69127849D1 DE69127849D1 (de) 1997-11-13
DE69127849T2 true DE69127849T2 (de) 1998-03-26

Family

ID=26442879

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69127849T Expired - Fee Related DE69127849T2 (de) 1990-04-18 1991-04-17 Bipolarer Transistor

Country Status (3)

Country Link
US (1) US5150185A (de)
EP (1) EP0453945B1 (de)
DE (1) DE69127849T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0413333A3 (en) * 1989-08-18 1991-07-24 Hitachi, Ltd. A superconductized semiconductor device
JP3130545B2 (ja) * 1991-03-06 2001-01-31 株式会社東芝 半導体装置および半導体装置の製造方法
US5270223A (en) * 1991-06-28 1993-12-14 Texas Instruments Incorporated Multiple layer wide bandgap collector structure for bipolar transistors
US5508535A (en) * 1992-01-09 1996-04-16 Mitsubishi Denki Kabushiki Kaisha Compound semiconductor devices
US5349201A (en) * 1992-05-28 1994-09-20 Hughes Aircraft Company NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate
JPH0815214B2 (ja) * 1993-03-12 1996-02-14 日本電気株式会社 量子細線構造
JP3292894B2 (ja) * 1993-05-12 2002-06-17 日本電信電話株式会社 集積化受光回路
US5554882A (en) * 1993-11-05 1996-09-10 The Boeing Company Integrated trigger injector for avalanche semiconductor switch devices
US5631477A (en) * 1995-06-02 1997-05-20 Trw Inc. Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor
US7692212B1 (en) * 2004-12-07 2010-04-06 Hrl Laboratories, Llc Transistor with InGaAsP collector region and integrated opto-electronic devices employing same
US20020163013A1 (en) * 2000-09-11 2002-11-07 Kenji Toyoda Heterojunction bipolar transistor
US6624449B1 (en) * 2001-07-17 2003-09-23 David C. Scott Three terminal edge illuminated epilayer waveguide phototransistor
US7038224B2 (en) * 2002-07-30 2006-05-02 Applied Materials, Israel, Ltd. Contact opening metrology
US7473911B2 (en) * 2002-07-30 2009-01-06 Applied Materials, Israel, Ltd. Specimen current mapper
US6841795B2 (en) * 2002-10-25 2005-01-11 The University Of Connecticut Semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation
JP4134715B2 (ja) * 2002-12-19 2008-08-20 住友電気工業株式会社 バイポーラトランジスタ
US7038250B2 (en) * 2003-05-28 2006-05-02 Kabushiki Kaisha Toshiba Semiconductor device suited for a high frequency amplifier
US6841806B1 (en) * 2003-06-24 2005-01-11 The University Of Connecticut Heterojunction thyristor-based amplifier
TWM253058U (en) * 2003-09-05 2004-12-11 Visual Photonics Epitaxy Co Lt Heterogeneous junction dipole transistor structure for adjusting on voltage of base and emitter
KR100568567B1 (ko) * 2003-12-19 2006-04-07 한국전자통신연구원 이종 접합 쌍극자 트랜지스터 및 그 제조 방법
JP2007103784A (ja) * 2005-10-06 2007-04-19 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタ
CN102412285B (zh) * 2011-11-01 2014-10-08 上海华虹宏力半导体制造有限公司 一种锗硅异质结三极管器件结构及其制造方法
JP6133392B2 (ja) 2013-02-18 2017-05-24 株式会社村田製作所 バイポーラトランジスタ
CN105378904B (zh) * 2013-07-10 2017-09-05 株式会社村田制作所 半导体装置
US10263125B2 (en) * 2014-05-16 2019-04-16 Qorvo Us, Inc. Varactor diode with heterostructure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4518979A (en) * 1982-06-30 1985-05-21 International Business Machines Corporation Semiconductor transistor with graded base and collector
DE3780284T2 (de) * 1986-12-22 1993-01-07 Nec Corp Bipolarer heterouebergangs-transistor mit ballistischem betrieb.
CA1299771C (en) * 1987-02-06 1992-04-28 Tadao Ishibashi Heterojunction bipolar transistor with collector buffer layer

Also Published As

Publication number Publication date
DE69127849D1 (de) 1997-11-13
EP0453945B1 (de) 1997-10-08
EP0453945A1 (de) 1991-10-30
US5150185A (en) 1992-09-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee