KR910018973U - 바이폴라 트랜지스터의 구조 - Google Patents

바이폴라 트랜지스터의 구조

Info

Publication number
KR910018973U
KR910018973U KR2019900004442U KR900004442U KR910018973U KR 910018973 U KR910018973 U KR 910018973U KR 2019900004442 U KR2019900004442 U KR 2019900004442U KR 900004442 U KR900004442 U KR 900004442U KR 910018973 U KR910018973 U KR 910018973U
Authority
KR
South Korea
Prior art keywords
bipolar transistor
bipolar
transistor
Prior art date
Application number
KR2019900004442U
Other languages
English (en)
Other versions
KR960005390Y1 (ko
Inventor
이동낙
Original Assignee
엘지반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지반도체 주식회사 filed Critical 엘지반도체 주식회사
Priority to KR2019900004442U priority Critical patent/KR960005390Y1/ko
Publication of KR910018973U publication Critical patent/KR910018973U/ko
Application granted granted Critical
Publication of KR960005390Y1 publication Critical patent/KR960005390Y1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804Emitter regions of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
KR2019900004442U 1990-04-12 1990-04-12 바이폴라 트랜지스터의 구조 KR960005390Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019900004442U KR960005390Y1 (ko) 1990-04-12 1990-04-12 바이폴라 트랜지스터의 구조

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019900004442U KR960005390Y1 (ko) 1990-04-12 1990-04-12 바이폴라 트랜지스터의 구조

Publications (2)

Publication Number Publication Date
KR910018973U true KR910018973U (ko) 1991-11-29
KR960005390Y1 KR960005390Y1 (ko) 1996-06-28

Family

ID=19297585

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019900004442U KR960005390Y1 (ko) 1990-04-12 1990-04-12 바이폴라 트랜지스터의 구조

Country Status (1)

Country Link
KR (1) KR960005390Y1 (ko)

Also Published As

Publication number Publication date
KR960005390Y1 (ko) 1996-06-28

Similar Documents

Publication Publication Date Title
DE3751972T2 (de) Bipolarer Transistor
DE69127849D1 (de) Bipolarer Transistor
DE3788525T2 (de) Feldeffekttransistoranordnungen.
KR860006138A (ko) 헤테로 접합 전계 효과 트랜지스터
DE3751098D1 (de) Feldeffekttransistor.
KR910010622A (ko) 바이폴라트랜지스터의 제조방법
DE68927925D1 (de) Supraleitender Transistor
KR890700270A (ko) 헤테로 접합 바이폴라 트랜지스터
DE69117866T2 (de) Heteroübergangsfeldeffekttransistor
DE68925092D1 (de) MOS-Feldeffekttransistor
NO912303D0 (no) Amorf form av gemfibrozil.
KR910002004A (ko) 바이폴라 트랜지스터의 제조방법
DE69332112D1 (de) Verbesserter biolarer Transistor
FI930411A (fi) Bombesin antagonister
MX9102079A (es) Plemezcla de semduramicina
LV12073A (lv) Diizopinokamfenilhlorborana iegusanas panemiens
DE59209229D1 (de) Bipolarer Hochfrequenztransistor
ITMI912654A1 (it) Combinazione di estrusore-calandra
DE68926629D1 (de) Supraleitender Transistor
DE69128384D1 (de) Heteroübergang-Bipolartransistor
KR910018973U (ko) 바이폴라 트랜지스터의 구조
KR910019731U (ko) 테니스 코-트 라인의 구조
DE68928670T2 (de) Heterostrukturbipolartransistor
FI913285A0 (fi) Svavelsubstituerade mevinsyraderivat.
DE69117441D1 (de) Feldeffektransistor

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
REGI Registration of establishment
FPAY Annual fee payment

Payment date: 20050524

Year of fee payment: 10

EXPY Expiration of term