DE68909977D1 - Bipolartransistor. - Google Patents
Bipolartransistor.Info
- Publication number
- DE68909977D1 DE68909977D1 DE89101370T DE68909977T DE68909977D1 DE 68909977 D1 DE68909977 D1 DE 68909977D1 DE 89101370 T DE89101370 T DE 89101370T DE 68909977 T DE68909977 T DE 68909977T DE 68909977 D1 DE68909977 D1 DE 68909977D1
- Authority
- DE
- Germany
- Prior art keywords
- bipolar transistor
- bipolar
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/157—Doping structures, e.g. doping superlattices, nipi superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/171,603 US4972246A (en) | 1988-03-22 | 1988-03-22 | Effective narrow band gap base transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68909977D1 true DE68909977D1 (de) | 1993-11-25 |
DE68909977T2 DE68909977T2 (de) | 1994-05-05 |
Family
ID=22624412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE89101370T Expired - Lifetime DE68909977T2 (de) | 1988-03-22 | 1989-01-27 | Bipolartransistor. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4972246A (de) |
EP (1) | EP0333997B1 (de) |
JP (1) | JPH0626218B2 (de) |
DE (1) | DE68909977T2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4314951C2 (de) * | 1993-05-06 | 2001-07-12 | Daimler Chrysler Ag | Bipolar-Transistor mit hoher Stromverstärkung |
CN106537617B (zh) | 2014-05-27 | 2019-04-16 | 斯兰纳Uv科技有限公司 | 使用半导体结构和超晶格的高级电子装置结构 |
KR102439708B1 (ko) | 2014-05-27 | 2022-09-02 | 실라나 유브이 테크놀로지스 피티이 리미티드 | 광전자 디바이스 |
WO2015181656A1 (en) | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | Electronic devices comprising n-type and p-type superlattices |
US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
CN110085665B (zh) * | 2019-05-06 | 2021-10-22 | 林和 | 超晶格超大规模集成电路 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU7731575A (en) * | 1974-01-18 | 1976-07-15 | Nat Patent Dev Corp | Heterojunction devices |
US4137542A (en) * | 1977-04-20 | 1979-01-30 | International Business Machines Corporation | Semiconductor structure |
JPH0665216B2 (ja) * | 1981-12-28 | 1994-08-22 | 日本電気株式会社 | 半導体装置 |
JPH0665217B2 (ja) * | 1982-02-19 | 1994-08-22 | 日本電気株式会社 | トランジスタ |
JPS5967676A (ja) * | 1982-10-12 | 1984-04-17 | Nec Corp | 超格子負性抵抗素子 |
JPS5990978A (ja) * | 1982-11-16 | 1984-05-25 | Nec Corp | 超格子負性抵抗素子 |
US4785340A (en) * | 1985-03-29 | 1988-11-15 | Director-General Of The Agency Of Industrial Science And Technology | Semiconductor device having doping multilayer structure |
JPS61276261A (ja) * | 1985-05-30 | 1986-12-06 | Fujitsu Ltd | 高速バイポ−ラトランジスタの製造方法 |
JPS62279672A (ja) * | 1986-05-28 | 1987-12-04 | Kanegafuchi Chem Ind Co Ltd | 半導体装置 |
-
1988
- 1988-03-22 US US07/171,603 patent/US4972246A/en not_active Expired - Fee Related
- 1988-12-20 JP JP63319675A patent/JPH0626218B2/ja not_active Expired - Lifetime
-
1989
- 1989-01-27 DE DE89101370T patent/DE68909977T2/de not_active Expired - Lifetime
- 1989-01-27 EP EP89101370A patent/EP0333997B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0333997A2 (de) | 1989-09-27 |
JPH0626218B2 (ja) | 1994-04-06 |
US4972246A (en) | 1990-11-20 |
EP0333997A3 (en) | 1990-02-14 |
JPH029132A (ja) | 1990-01-12 |
DE68909977T2 (de) | 1994-05-05 |
EP0333997B1 (de) | 1993-10-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3751972T2 (de) | Bipolarer Transistor | |
DE69032597T2 (de) | Bipolartransistor mit Heteroübergang | |
DE3583119D1 (de) | Bipolartransistor mit heterouebergang. | |
DE3788525T2 (de) | Feldeffekttransistoranordnungen. | |
DE3768854D1 (de) | Lateraltransistor. | |
DE69127849T2 (de) | Bipolarer Transistor | |
DE3884292T2 (de) | Bipolarer Transistor mit Heteroübergang. | |
DE3888085T2 (de) | Bipolartransistor mit Heteroübergang. | |
DE3751098T2 (de) | Feldeffekttransistor. | |
DE3887716D1 (de) | Transistor. | |
DE3785196D1 (de) | Bipolartransistor mit heterouebergang. | |
DE68906095D1 (de) | Vertikaler bipolartransistor. | |
DE3788500D1 (de) | Bipolarer Halbleitertransistor. | |
DE3750310D1 (de) | Heteroübergangs-Feldeffektanordnung. | |
DE3882565T2 (de) | Bipolartransistor. | |
DE3851175T2 (de) | Bipolartransistor mit Heteroübergängen. | |
DE3851991D1 (de) | Bipolartransistoren. | |
DE68913868D1 (de) | Supraleitender Transistor. | |
DE68909977T2 (de) | Bipolartransistor. | |
DE3773276D1 (de) | Transistoranordnung. | |
DE3888602D1 (de) | Bipolartransistor mit Heteroübergängen. | |
DE3874949T2 (de) | Heterouebergang-bipolartransistor. | |
DE68928670T2 (de) | Heterostrukturbipolartransistor | |
DE69128384T2 (de) | Heteroübergang-Bipolartransistor | |
NO890988D0 (no) | Disubstituerte pyrroler. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8330 | Complete renunciation |