DE68909977D1 - Bipolartransistor. - Google Patents

Bipolartransistor.

Info

Publication number
DE68909977D1
DE68909977D1 DE89101370T DE68909977T DE68909977D1 DE 68909977 D1 DE68909977 D1 DE 68909977D1 DE 89101370 T DE89101370 T DE 89101370T DE 68909977 T DE68909977 T DE 68909977T DE 68909977 D1 DE68909977 D1 DE 68909977D1
Authority
DE
Germany
Prior art keywords
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE89101370T
Other languages
English (en)
Other versions
DE68909977T2 (de
Inventor
Marc H Brodsky
Frank F Fang
Bernard S Meyerson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE68909977D1 publication Critical patent/DE68909977D1/de
Application granted granted Critical
Publication of DE68909977T2 publication Critical patent/DE68909977T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/157—Doping structures, e.g. doping superlattices, nipi superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE89101370T 1988-03-22 1989-01-27 Bipolartransistor. Expired - Lifetime DE68909977T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/171,603 US4972246A (en) 1988-03-22 1988-03-22 Effective narrow band gap base transistor

Publications (2)

Publication Number Publication Date
DE68909977D1 true DE68909977D1 (de) 1993-11-25
DE68909977T2 DE68909977T2 (de) 1994-05-05

Family

ID=22624412

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89101370T Expired - Lifetime DE68909977T2 (de) 1988-03-22 1989-01-27 Bipolartransistor.

Country Status (4)

Country Link
US (1) US4972246A (de)
EP (1) EP0333997B1 (de)
JP (1) JPH0626218B2 (de)
DE (1) DE68909977T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4314951C2 (de) * 1993-05-06 2001-07-12 Daimler Chrysler Ag Bipolar-Transistor mit hoher Stromverstärkung
JP6636459B2 (ja) 2014-05-27 2020-01-29 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ 半導体構造と超格子とを用いた高度電子デバイス
WO2015181648A1 (en) 2014-05-27 2015-12-03 The Silanna Group Pty Limited An optoelectronic device
WO2015181656A1 (en) 2014-05-27 2015-12-03 The Silanna Group Pty Limited Electronic devices comprising n-type and p-type superlattices
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
CN113871461B (zh) * 2019-05-06 2023-09-12 林和 超晶格超大规模集成电路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU7731575A (en) * 1974-01-18 1976-07-15 Nat Patent Dev Corp Heterojunction devices
US4137542A (en) * 1977-04-20 1979-01-30 International Business Machines Corporation Semiconductor structure
JPH0665216B2 (ja) * 1981-12-28 1994-08-22 日本電気株式会社 半導体装置
JPH0665217B2 (ja) * 1982-02-19 1994-08-22 日本電気株式会社 トランジスタ
JPS5967676A (ja) * 1982-10-12 1984-04-17 Nec Corp 超格子負性抵抗素子
JPS5990978A (ja) * 1982-11-16 1984-05-25 Nec Corp 超格子負性抵抗素子
US4785340A (en) * 1985-03-29 1988-11-15 Director-General Of The Agency Of Industrial Science And Technology Semiconductor device having doping multilayer structure
JPS61276261A (ja) * 1985-05-30 1986-12-06 Fujitsu Ltd 高速バイポ−ラトランジスタの製造方法
JPS62279672A (ja) * 1986-05-28 1987-12-04 Kanegafuchi Chem Ind Co Ltd 半導体装置

Also Published As

Publication number Publication date
EP0333997A3 (en) 1990-02-14
JPH0626218B2 (ja) 1994-04-06
JPH029132A (ja) 1990-01-12
US4972246A (en) 1990-11-20
EP0333997A2 (de) 1989-09-27
DE68909977T2 (de) 1994-05-05
EP0333997B1 (de) 1993-10-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8330 Complete renunciation