DE69032597T2 - Bipolartransistor mit Heteroübergang - Google Patents

Bipolartransistor mit Heteroübergang

Info

Publication number
DE69032597T2
DE69032597T2 DE69032597T DE69032597T DE69032597T2 DE 69032597 T2 DE69032597 T2 DE 69032597T2 DE 69032597 T DE69032597 T DE 69032597T DE 69032597 T DE69032597 T DE 69032597T DE 69032597 T2 DE69032597 T2 DE 69032597T2
Authority
DE
Germany
Prior art keywords
heterojunction
bipolar transistor
bipolar
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69032597T
Other languages
English (en)
Other versions
DE69032597D1 (de
Inventor
Takahiko Endo
Riichi Katoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3905490A external-priority patent/JP2941335B2/ja
Priority claimed from JP14255090A external-priority patent/JPH0435037A/ja
Priority claimed from JP23136590A external-priority patent/JP3183882B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69032597D1 publication Critical patent/DE69032597D1/de
Application granted granted Critical
Publication of DE69032597T2 publication Critical patent/DE69032597T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
DE69032597T 1990-02-20 1990-12-31 Bipolartransistor mit Heteroübergang Expired - Fee Related DE69032597T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP3905490A JP2941335B2 (ja) 1990-02-20 1990-02-20 ヘテロ接合バイボーラトランジスタ
JP7667790 1990-03-28
JP14255090A JPH0435037A (ja) 1990-05-31 1990-05-31 ヘテロ接合バイポーラトランジスタ
JP23136590A JP3183882B2 (ja) 1990-03-28 1990-08-31 ヘテロ接合バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
DE69032597D1 DE69032597D1 (de) 1998-10-01
DE69032597T2 true DE69032597T2 (de) 1999-03-25

Family

ID=27460699

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69032597T Expired - Fee Related DE69032597T2 (de) 1990-02-20 1990-12-31 Bipolartransistor mit Heteroübergang

Country Status (3)

Country Link
US (1) US5177583A (de)
EP (1) EP0445475B1 (de)
DE (1) DE69032597T2 (de)

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JP2600485B2 (ja) * 1990-11-28 1997-04-16 日本電気株式会社 半導体装置
JP3130545B2 (ja) * 1991-03-06 2001-01-31 株式会社東芝 半導体装置および半導体装置の製造方法
US5132764A (en) * 1991-03-21 1992-07-21 Texas Instruments Incorporated Multilayer base heterojunction bipolar transistor
US5270223A (en) * 1991-06-28 1993-12-14 Texas Instruments Incorporated Multiple layer wide bandgap collector structure for bipolar transistors
JP2855908B2 (ja) * 1991-09-05 1999-02-10 日本電気株式会社 半導体装置及びその製造方法
JPH05182980A (ja) * 1992-01-07 1993-07-23 Toshiba Corp ヘテロ接合バイポーラトランジスタ
US5304816A (en) * 1992-11-25 1994-04-19 At&T Bell Laboratories Article comprising a "ballistic" heterojunction bipolar transistor
JPH0793315B2 (ja) * 1992-11-27 1995-10-09 日本電気株式会社 半導体装置およびその製造方法
JP3156436B2 (ja) * 1993-04-05 2001-04-16 日本電気株式会社 ヘテロ接合バイポーラトランジスタ
US5382815A (en) * 1993-12-23 1995-01-17 International Business Machines Corporation Carrier conduction conductor-insulator semiconductor (CIS) transistor
US5461245A (en) * 1994-08-24 1995-10-24 At&T Corp. Article comprising a bipolar transistor with floating base
JPH08115921A (ja) * 1994-10-17 1996-05-07 Mitsubishi Electric Corp ヘテロ接合バイポーラトランジスタ，及びその製造方法
DE19617030C2 (de) * 1996-04-27 1999-11-18 Daimler Chrysler Ag Si/SiGe-Heterobipolartransistor mit hochdotiertem SiGe-Spacer
ATE283549T1 (de) * 1997-06-24 2004-12-15 Massachusetts Inst Technology Kontrolle der verspannungsdichte durch verwendung von gradientenschichten und durch planarisierung
US7227176B2 (en) 1998-04-10 2007-06-05 Massachusetts Institute Of Technology Etch stop layer system
DE19824110A1 (de) * 1998-05-29 1999-12-09 Daimler Chrysler Ag Resonanz Phasen Transistor mit Laufzeitverzögerung
JP3658745B2 (ja) * 1998-08-19 2005-06-08 株式会社ルネサステクノロジ バイポーラトランジスタ
US6602613B1 (en) 2000-01-20 2003-08-05 Amberwave Systems Corporation Heterointegration of materials using deposition and bonding
JP2003520444A (ja) * 2000-01-20 2003-07-02 アンバーウェーブ システムズ コーポレイション 高温成長を不要とする低貫通転位密度格子不整合エピ層
US6531369B1 (en) * 2000-03-01 2003-03-11 Applied Micro Circuits Corporation Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe)
TW512529B (en) * 2000-06-14 2002-12-01 Infineon Technologies Ag Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor
US6573126B2 (en) * 2000-08-16 2003-06-03 Massachusetts Institute Of Technology Process for producing semiconductor article using graded epitaxial growth
US20020163013A1 (en) * 2000-09-11 2002-11-07 Kenji Toyoda Heterojunction bipolar transistor
US6649480B2 (en) * 2000-12-04 2003-11-18 Amberwave Systems Corporation Method of fabricating CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US20020100942A1 (en) * 2000-12-04 2002-08-01 Fitzgerald Eugene A. CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs
US6830976B2 (en) * 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6703688B1 (en) * 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6724008B2 (en) 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6723661B2 (en) * 2001-03-02 2004-04-20 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6940089B2 (en) 2001-04-04 2005-09-06 Massachusetts Institute Of Technology Semiconductor device structure
WO2003009396A2 (en) * 2001-07-20 2003-01-30 Microlink Devices, Inc. Algaas or ingap low turn-on voltage gaas-based heterojunction bipolar transistor
WO2003009339A2 (en) * 2001-07-20 2003-01-30 Microlink Devices, Inc. Graded base gaassb for high speed gaas hbt
EP1428262A2 (de) * 2001-09-21 2004-06-16 Amberwave Systems Corporation Halbleiterstrukturen mit verspannten materialschichten und mit definierten verunreinigungsgradienten und diesbezügliche herstellungsverfahren
AU2002341803A1 (en) 2001-09-24 2003-04-07 Amberwave Systems Corporation Rf circuits including transistors having strained material layers
JP3565274B2 (ja) * 2002-02-25 2004-09-15 住友電気工業株式会社 バイポーラトランジスタ
WO2003079415A2 (en) 2002-03-14 2003-09-25 Amberwave Systems Corporation Methods for fabricating strained layers on semiconductor substrates
US7307273B2 (en) * 2002-06-07 2007-12-11 Amberwave Systems Corporation Control of strain in device layers by selective relaxation
US7615829B2 (en) * 2002-06-07 2009-11-10 Amberwave Systems Corporation Elevated source and drain elements for strained-channel heterojuntion field-effect transistors
US7335545B2 (en) * 2002-06-07 2008-02-26 Amberwave Systems Corporation Control of strain in device layers by prevention of relaxation
US6995430B2 (en) * 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US20030227057A1 (en) * 2002-06-07 2003-12-11 Lochtefeld Anthony J. Strained-semiconductor-on-insulator device structures
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US6946371B2 (en) * 2002-06-10 2005-09-20 Amberwave Systems Corporation Methods of fabricating semiconductor structures having epitaxially grown source and drain elements
US6982474B2 (en) * 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
WO2004019391A2 (en) 2002-08-23 2004-03-04 Amberwave Systems Corporation Semiconductor heterostructures having reduced dislocation pile-ups and related methods
US7594967B2 (en) * 2002-08-30 2009-09-29 Amberwave Systems Corporation Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
EP1588406B1 (de) 2003-01-27 2019-07-10 Taiwan Semiconductor Manufacturing Company, Ltd. Halbleiterstrukturen mit strukturhomogenität
US7019383B2 (en) * 2003-02-26 2006-03-28 Skyworks Solutions, Inc. Gallium arsenide HBT having increased performance and method for its fabrication
EP1602125B1 (de) * 2003-03-07 2019-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Verfahren zur flachen grabenisolation
US20050151159A1 (en) * 2003-11-21 2005-07-14 Zhenqiang Ma Solid-state high power device and method
US7317215B2 (en) * 2004-09-21 2008-01-08 International Business Machines Corporation SiGe heterojunction bipolar transistor (HBT)
US7393733B2 (en) * 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
US20060113603A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid semiconductor-on-insulator structures and related methods
US20080050883A1 (en) * 2006-08-25 2008-02-28 Atmel Corporation Hetrojunction bipolar transistor (hbt) with periodic multilayer base
US8530934B2 (en) 2005-11-07 2013-09-10 Atmel Corporation Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto
US20070102834A1 (en) * 2005-11-07 2007-05-10 Enicks Darwin G Strain-compensated metastable compound base heterojunction bipolar transistor
US20070148890A1 (en) * 2005-12-27 2007-06-28 Enicks Darwin G Oxygen enhanced metastable silicon germanium film layer
US7846806B1 (en) * 2007-05-25 2010-12-07 National Semiconductor Corporation System and method for providing a self aligned silicon germanium (SiGe) heterojunction bipolar transistor using a mesa emitter-base architecture
US7795605B2 (en) * 2007-06-29 2010-09-14 International Business Machines Corporation Phase change material based temperature sensor
US9425260B2 (en) * 2014-03-13 2016-08-23 International Business Machines Corporation Application of super lattice films on insulator to lateral bipolar transistors
JP7094082B2 (ja) * 2017-06-14 2022-07-01 日本ルメンタム株式会社 光半導体素子、光サブアセンブリ、及び光モジュール
US11171210B2 (en) 2019-10-11 2021-11-09 Globalpoundries U.S. Inc. Double mesa heterojunction bipolar transistor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59211266A (ja) * 1983-05-17 1984-11-30 Toshiba Corp ヘテロ接合バイポ−ラトランジスタ
US4593305A (en) * 1983-05-17 1986-06-03 Kabushiki Kaisha Toshiba Heterostructure bipolar transistor
JP2542676B2 (ja) * 1987-07-02 1996-10-09 株式会社東芝 ヘテロ接合バイポ―ラトランジスタ
JP2623635B2 (ja) * 1988-02-16 1997-06-25 ソニー株式会社 バイポーラトランジスタ及びその製造方法

Also Published As

Publication number Publication date
US5177583A (en) 1993-01-05
EP0445475A2 (de) 1991-09-11
DE69032597D1 (de) 1998-10-01
EP0445475A3 (en) 1991-11-27
EP0445475B1 (de) 1998-08-26

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8339 Ceased/non-payment of the annual fee