DE69319360D1 - Heteroübergang-Bipolartransistor mit Siliziumkarbid - Google Patents

Heteroübergang-Bipolartransistor mit Siliziumkarbid

Info

Publication number
DE69319360D1
DE69319360D1 DE69319360T DE69319360T DE69319360D1 DE 69319360 D1 DE69319360 D1 DE 69319360D1 DE 69319360 T DE69319360 T DE 69319360T DE 69319360 T DE69319360 T DE 69319360T DE 69319360 D1 DE69319360 D1 DE 69319360D1
Authority
DE
Germany
Prior art keywords
silicon carbide
bipolar transistor
heterojunction bipolar
heterojunction
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69319360T
Other languages
English (en)
Other versions
DE69319360T2 (de
Inventor
Shinichi Shikata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4066107A external-priority patent/JPH05275440A/ja
Priority claimed from JP06610892A external-priority patent/JP3339508B2/ja
Priority claimed from JP4087260A external-priority patent/JPH05291277A/ja
Priority claimed from JP4087268A external-priority patent/JPH05291278A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69319360D1 publication Critical patent/DE69319360D1/de
Publication of DE69319360T2 publication Critical patent/DE69319360T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/031—Manufacture or treatment of three-or-more electrode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/8303—Diamond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H10P14/24—
    • H10P14/27—
    • H10P14/2903—
    • H10P14/2904—
    • H10P14/3208—
    • H10P14/3408—
    • H10P14/3416—
    • H10P14/3418—
    • H10P14/3442—
    • H10P14/3444—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/932—Boron nitride semiconductor
DE69319360T 1992-03-24 1993-03-23 Heteroübergang-Bipolartransistor mit Siliziumkarbid Expired - Fee Related DE69319360T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP4066107A JPH05275440A (ja) 1992-03-24 1992-03-24 半導体装置及びその製造方法
JP06610892A JP3339508B2 (ja) 1992-03-24 1992-03-24 半導体装置
JP4087260A JPH05291277A (ja) 1992-04-08 1992-04-08 半導体装置及びその製造方法
JP4087268A JPH05291278A (ja) 1992-04-08 1992-04-08 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69319360D1 true DE69319360D1 (de) 1998-08-06
DE69319360T2 DE69319360T2 (de) 1998-12-17

Family

ID=27464669

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69319360T Expired - Fee Related DE69319360T2 (de) 1992-03-24 1993-03-23 Heteroübergang-Bipolartransistor mit Siliziumkarbid

Country Status (4)

Country Link
US (2) US5536952A (de)
EP (1) EP0562549B1 (de)
CA (1) CA2092215A1 (de)
DE (1) DE69319360T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69319360T2 (de) * 1992-03-24 1998-12-17 Sumitomo Electric Industries, Ltd., Osaka Heteroübergang-Bipolartransistor mit Siliziumkarbid
DE4440072C1 (de) * 1994-11-10 1996-02-22 Inst Halbleiterphysik Gmbh Verfahren zur Herstellung einer vergrabenen monokristallinen Siliziumcarbidschicht
DE19533313A1 (de) * 1995-09-08 1997-03-13 Max Planck Gesellschaft Halbleiterstruktur für einen Transistor
US5939738A (en) * 1995-10-25 1999-08-17 Texas Instruments Incorporated Low base-resistance bipolar transistor
US5847414A (en) * 1995-10-30 1998-12-08 Abb Research Limited Semiconductor device having a hetero-junction between SiC and a Group 3B-nitride
US5859447A (en) * 1997-05-09 1999-01-12 Yang; Edward S. Heterojunction bipolar transistor having heterostructure ballasting emitter
SE9801881D0 (sv) * 1998-05-28 1998-05-28 Asea Brown Boveri A switching device
SE9804135L (sv) 1998-11-30 2000-05-31 Abb Ab Fotokonduktiv omkopplare
JP2000277622A (ja) * 1999-01-18 2000-10-06 Sony Corp 半導体装置およびその製造方法
SE9901410D0 (sv) * 1999-04-21 1999-04-21 Abb Research Ltd Abipolar transistor
US6573565B2 (en) * 1999-07-28 2003-06-03 International Business Machines Corporation Method and structure for providing improved thermal conduction for silicon semiconductor devices
DE10005405A1 (de) * 2000-02-04 2001-08-09 Inst Halbleiterphysik Gmbh Schichtstapel für pnp-Heterobipolar-Transistor
DE10104776A1 (de) * 2001-02-02 2002-08-22 Infineon Technologies Ag Bipolartransistor und Verfahren zu dessen Herstellung
EP1393352B1 (de) 2001-05-28 2012-08-01 Showa Denko K.K. Halbleiterbauelement, halbleiterschicht und herstellungsverfahren dafür
US7132701B1 (en) * 2001-07-27 2006-11-07 Fairchild Semiconductor Corporation Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods
CN106784125A (zh) * 2016-12-08 2017-05-31 西安电子科技大学 Ga2O3/SiC异质结光电PNP晶体管及其制备方法
WO2018103645A1 (zh) * 2016-12-08 2018-06-14 西安电子科技大学 Ga2O3/SiC异质结NPN/PNP光电晶体管的制备方法
CN109244179A (zh) * 2018-08-10 2019-01-18 西安电子科技大学 基于金刚石/SiC异质结构的光电NPN晶体管及其制备方法
CN113140620B (zh) * 2021-04-13 2022-12-02 西安电子科技大学 宽禁带半导体BPN/GaN异质结材料及外延生长方法

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US4097888A (en) * 1975-10-15 1978-06-27 Signetics Corporation High density collector-up structure
US4529996A (en) * 1983-04-14 1985-07-16 Allied Coporation Indium phosphide-boron phosphide heterojunction bipolar transistor
JPS62159463A (ja) * 1986-01-08 1987-07-15 Fujitsu Ltd 半導体装置の製造方法
JPS62160760A (ja) * 1986-01-10 1987-07-16 Fujitsu Ltd 半導体装置の製造方法
JPH0770540B2 (ja) * 1986-03-18 1995-07-31 富士通株式会社 ヘテロ接合バイポ−ラトランジスタ
JPS62265762A (ja) * 1986-05-14 1987-11-18 Fujitsu Ltd 半導体装置
US4863529A (en) * 1987-03-12 1989-09-05 Sumitomo Electric Industries, Ltd. Thin film single crystal diamond substrate
JP2519740B2 (ja) * 1987-08-26 1996-07-31 住友電気工業株式会社 ヘテロ接合トランジスタ及びその製造法
US4945394A (en) * 1987-10-26 1990-07-31 North Carolina State University Bipolar junction transistor on silicon carbide
JPH01143261A (ja) * 1987-11-27 1989-06-05 Nec Corp 半導体装置
US5179070A (en) * 1988-04-30 1993-01-12 Sumitomo Electric Industries, Ltd. Semiconductor substrate having a superconducting thin film with a buffer layer in between
US5006914A (en) * 1988-12-02 1991-04-09 Advanced Technology Materials, Inc. Single crystal semiconductor substrate articles and semiconductor devices comprising same
JPH02192494A (ja) * 1989-01-20 1990-07-30 Sumitomo Electric Ind Ltd 複合材料
JP2860138B2 (ja) * 1989-03-29 1999-02-24 キヤノン株式会社 半導体装置およびこれを用いた光電変換装置
US4985742A (en) * 1989-07-07 1991-01-15 University Of Colorado Foundation, Inc. High temperature semiconductor devices having at least one gallium nitride layer
JPH0397275A (ja) * 1989-09-09 1991-04-23 Katsunobu Maeda 炭化硅素の青色発光ダイオード素子
EP0420188A1 (de) * 1989-09-27 1991-04-03 Sumitomo Electric Industries, Ltd. Halbleitende Heteroübergangsstruktur
US5164810A (en) * 1989-12-06 1992-11-17 General Motors Corporation Cubic boron nitride bipolar transistor
JP2730271B2 (ja) * 1990-03-07 1998-03-25 住友電気工業株式会社 半導体装置
US5043773A (en) * 1990-06-04 1991-08-27 Advanced Technology Materials, Inc. Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates
US5266819A (en) * 1991-05-13 1993-11-30 Rockwell International Corporation Self-aligned gallium arsenide/aluminum gallium arsenide collector-up heterojunction bipolar transistors capable of microwave applications and method
JP3214868B2 (ja) * 1991-07-19 2001-10-02 ローム株式会社 ヘテロ接合バイポーラトランジスタの製造方法
JP3150376B2 (ja) * 1991-09-30 2001-03-26 ローム株式会社 ヘテロ接合バイポーラトランジスタの製法
US5378921A (en) * 1991-10-21 1995-01-03 Rohm Co., Ltd. Heterojunction multicollector transistor
EP0562272A3 (en) * 1992-03-23 1994-05-25 Texas Instruments Inc Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same
DE69319360T2 (de) * 1992-03-24 1998-12-17 Sumitomo Electric Industries, Ltd., Osaka Heteroübergang-Bipolartransistor mit Siliziumkarbid
US5326992A (en) * 1992-07-29 1994-07-05 The United States Of America As Represented By The Secretary Of The Navy Silicon carbide and SiCAlN heterojunction bipolar transistor structures
US5272096A (en) * 1992-09-29 1993-12-21 Motorola, Inc. Method for making a bipolar transistor having a silicon carbide layer
US5285089A (en) * 1992-12-02 1994-02-08 Kobe Steel U.S.A., Inc. Diamond and silicon carbide heterojunction bipolar transistor
US5442199A (en) * 1993-05-14 1995-08-15 Kobe Steel Usa, Inc. Diamond hetero-junction rectifying element

Also Published As

Publication number Publication date
EP0562549A2 (de) 1993-09-29
EP0562549B1 (de) 1998-07-01
DE69319360T2 (de) 1998-12-17
US5536952A (en) 1996-07-16
US5624853A (en) 1997-04-29
CA2092215A1 (en) 1993-09-25
EP0562549A3 (en) 1994-09-07

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee