SE9801881D0 - A switching device - Google Patents

A switching device

Info

Publication number
SE9801881D0
SE9801881D0 SE9801881A SE9801881A SE9801881D0 SE 9801881 D0 SE9801881 D0 SE 9801881D0 SE 9801881 A SE9801881 A SE 9801881A SE 9801881 A SE9801881 A SE 9801881A SE 9801881 D0 SE9801881 D0 SE 9801881D0
Authority
SE
Sweden
Prior art keywords
layer
state
voltage
transport
charge carriers
Prior art date
Application number
SE9801881A
Other languages
English (en)
Inventor
Hans Bernhoff
Jan Isberg
Peter Isberg
Aake Oeberg
Mark Irwin
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Priority to SE9801881A priority Critical patent/SE9801881D0/sv
Publication of SE9801881D0 publication Critical patent/SE9801881D0/sv
Priority to US09/093,725 priority patent/US6204522B1/en
Priority to JP2000551440A priority patent/JP4925508B2/ja
Priority to EP99930040A priority patent/EP1090426A1/en
Priority to AU46654/99A priority patent/AU4665499A/en
Priority to PCT/SE1999/000916 priority patent/WO1999062122A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
SE9801881A 1998-05-28 1998-05-28 A switching device SE9801881D0 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9801881A SE9801881D0 (sv) 1998-05-28 1998-05-28 A switching device
US09/093,725 US6204522B1 (en) 1998-05-28 1998-06-09 Switching device
JP2000551440A JP4925508B2 (ja) 1998-05-28 1999-05-28 スイッチング素子
EP99930040A EP1090426A1 (en) 1998-05-28 1999-05-28 A switching device
AU46654/99A AU4665499A (en) 1998-05-28 1999-05-28 A switching device
PCT/SE1999/000916 WO1999062122A1 (en) 1998-05-28 1999-05-28 A switching device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9801881A SE9801881D0 (sv) 1998-05-28 1998-05-28 A switching device
US09/093,725 US6204522B1 (en) 1998-05-28 1998-06-09 Switching device

Publications (1)

Publication Number Publication Date
SE9801881D0 true SE9801881D0 (sv) 1998-05-28

Family

ID=26663314

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9801881A SE9801881D0 (sv) 1998-05-28 1998-05-28 A switching device

Country Status (5)

Country Link
US (1) US6204522B1 (sv)
EP (1) EP1090426A1 (sv)
AU (1) AU4665499A (sv)
SE (1) SE9801881D0 (sv)
WO (1) WO1999062122A1 (sv)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10028295C1 (de) * 2000-06-07 2001-08-16 Reinhausen Maschf Scheubeck Stufenschalter
JP5273635B2 (ja) * 2006-08-25 2013-08-28 独立行政法人産業技術総合研究所 高効率間接遷移型半導体紫外線発光素子
US7781256B2 (en) * 2007-05-31 2010-08-24 Chien-Min Sung Semiconductor-on-diamond devices and associated methods
FR2934713B1 (fr) * 2008-07-29 2010-10-15 Commissariat Energie Atomique Substrat de type semi-conducteur sur isolant a couches de diamant intrinseque et dope

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240088A (en) * 1979-08-08 1980-12-16 Semicon, Inc. Semiconductor high-voltage switch
EP0420188A1 (en) * 1989-09-27 1991-04-03 Sumitomo Electric Industries, Ltd. Semiconductor heterojunction structure
JP2775903B2 (ja) * 1989-10-04 1998-07-16 住友電気工業株式会社 ダイヤモンド半導体素子
US5223721A (en) 1989-11-22 1993-06-29 The Tokai University Juridical Foundation Diamond n-type semiconductor diamond p-n junction diode
US4993033A (en) 1989-12-18 1991-02-12 Thermo Electron Technologies Corp. High power fast switch
US5173761A (en) * 1991-01-28 1992-12-22 Kobe Steel Usa Inc., Electronic Materials Center Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer
JPH07118546B2 (ja) * 1991-03-22 1995-12-18 株式会社神戸製鋼所 ダイヤモンドヘテロ接合型ダイオード
JPH04293272A (ja) * 1991-03-22 1992-10-16 Kobe Steel Ltd ダイヤモンドｐｉｎ型ダイオード
US5397428A (en) 1991-12-20 1995-03-14 The University Of North Carolina At Chapel Hill Nucleation enhancement for chemical vapor deposition of diamond
EP0562549B1 (en) * 1992-03-24 1998-07-01 Sumitomo Electric Industries, Ltd. Heterojunction bipolar transistor containing silicon carbide
US5294814A (en) * 1992-06-09 1994-03-15 Kobe Steel Usa Vertical diamond field effect transistor
DE4323814A1 (de) 1992-09-25 1994-03-31 Siemens Ag MIS-Feldeffekttransistor
US5442199A (en) * 1993-05-14 1995-08-15 Kobe Steel Usa, Inc. Diamond hetero-junction rectifying element
US5536953A (en) 1994-03-08 1996-07-16 Kobe Steel Usa Wide bandgap semiconductor device including lightly doped active region
US5656828A (en) * 1994-05-04 1997-08-12 Daimler-Benz Ag Electronic component with a semiconductor composite structure
US5525815A (en) 1994-10-03 1996-06-11 General Electric Company Diamond film structure with high thermal conductivity
US5592053A (en) 1994-12-06 1997-01-07 Kobe Steel Usa, Inc. Diamond target electron beam device

Also Published As

Publication number Publication date
US6204522B1 (en) 2001-03-20
WO1999062122A1 (en) 1999-12-02
AU4665499A (en) 1999-12-13
EP1090426A1 (en) 2001-04-11

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