ES476675A1 - Perfeccionamientos en diodos semiconductores. - Google Patents

Perfeccionamientos en diodos semiconductores.

Info

Publication number
ES476675A1
ES476675A1 ES476675A ES476675A ES476675A1 ES 476675 A1 ES476675 A1 ES 476675A1 ES 476675 A ES476675 A ES 476675A ES 476675 A ES476675 A ES 476675A ES 476675 A1 ES476675 A1 ES 476675A1
Authority
ES
Spain
Prior art keywords
semiconductor diode
application
central layer
layer semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES476675A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DR HERMANN MADER
Original Assignee
DR HERMANN MADER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DR HERMANN MADER filed Critical DR HERMANN MADER
Publication of ES476675A1 publication Critical patent/ES476675A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8618—Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

Perfeccionamientos en dichos semiconductores, con estructura de tres zonas npn o pnp que consta de tres zonas de semiconductor colindantes y con contactos resistivos, caracterizado porque para disminuir la barrera de energía la zona de base central en la estructura de tres zonas, se ha elegido de un espesor tan pequeño que ya sin haber tensión eléctrica aplicada a los electrodos con el dopado dado a esta zona de base, toda la zona de base esta empobrecida de portadores de carga libres.
ES476675A 1978-01-10 1979-01-09 Perfeccionamientos en diodos semiconductores. Expired ES476675A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782800820 DE2800820A1 (de) 1978-01-10 1978-01-10 Halbleiter-diode

Publications (1)

Publication Number Publication Date
ES476675A1 true ES476675A1 (es) 1979-11-01

Family

ID=6029211

Family Applications (1)

Application Number Title Priority Date Filing Date
ES476675A Expired ES476675A1 (es) 1978-01-10 1979-01-09 Perfeccionamientos en diodos semiconductores.

Country Status (6)

Country Link
US (1) US4278986A (es)
EP (1) EP0003130B1 (es)
JP (1) JPS54133085A (es)
DE (2) DE2800820A1 (es)
ES (1) ES476675A1 (es)
GR (1) GR75591B (es)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2943143A1 (de) * 1979-10-25 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Infrarotempfindler x-y-ccd-sensor und verfahren zu seiner herstellung
US5053845A (en) * 1980-05-23 1991-10-01 Ricoh Company, Ltd. Thin-film device
US4410902A (en) * 1981-03-23 1983-10-18 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier semiconductor device
DE3278186D1 (en) * 1982-03-09 1988-04-07 Semitron Cricklade Ltd Transient absorption semiconductor device
DE3210086A1 (de) * 1982-03-19 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Lumineszenzdiode, geeignet als drucksensor
GB2121600A (en) * 1982-05-10 1983-12-21 Philips Electronic Associated Gate controlled unipolar hot-carrier transistors
DE3237379A1 (de) * 1982-10-08 1984-04-12 Siemens AG, 1000 Berlin und 8000 München Transistor mit einstellbarer energiebarriere und seine verwendung
DE3240180A1 (de) * 1982-10-29 1984-05-03 Siemens AG, 1000 Berlin und 8000 München Halbleiter-strahlungsdetektor, insbesondere fuer infrarotstrahlung
DE3334167A1 (de) * 1983-09-21 1985-04-04 Siemens AG, 1000 Berlin und 8000 München Halbleiterdiode
US4596069A (en) * 1984-07-13 1986-06-24 Texas Instruments Incorporated Three dimensional processing for monolithic IMPATTs
US4596070A (en) * 1984-07-13 1986-06-24 Texas Instruments Incorporated Interdigitated IMPATT devices
DE3708474A1 (de) * 1987-03-16 1988-09-29 Licentia Gmbh Majoritaetstraeger-halbleiterbauelement und verfahren zu seiner herstellung
EP0296371B1 (de) * 1987-06-22 1992-12-23 Landis & Gyr Business Support AG Photodetektor für Ultraviolett und Verfahren zur Herstellung
US5113076A (en) * 1989-12-19 1992-05-12 Santa Barbara Research Center Two terminal multi-band infrared radiation detector
US7649496B1 (en) * 2004-10-12 2010-01-19 Guy Silver EM rectifying antenna suitable for use in conjunction with a natural breakdown device
US8987858B2 (en) 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
US11424239B2 (en) * 2019-12-21 2022-08-23 Intel Corporation Diodes for package substrate electrostatic discharge (ESD) protection
US11264373B2 (en) 2019-12-21 2022-03-01 Intel Corporation Die backend diodes for electrostatic discharge (ESD) protection

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2284987A1 (fr) * 1974-09-10 1976-04-09 Thomson Csf Structure semi-conductrice particuliere de diode a injection thermoionique a faible bruit
JPS5758075B2 (es) * 1974-10-19 1982-12-08 Sony Corp
GB1573309A (en) * 1976-03-24 1980-08-20 Mullard Ltd Semiconductor devices and their manufacture
US4167748A (en) * 1978-07-03 1979-09-11 Bell Telephone Laboratories, Incorporated High voltage monolithic transistor circuit

Also Published As

Publication number Publication date
EP0003130A3 (en) 1979-08-22
DE2800820A1 (de) 1979-09-27
EP0003130B1 (de) 1981-02-11
US4278986A (en) 1981-07-14
EP0003130A2 (de) 1979-07-25
GR75591B (es) 1984-08-01
DE2960132D1 (en) 1981-03-26
JPS54133085A (en) 1979-10-16

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