JPS6410663A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain a capacitor having a sufficient capacitance without decreasing the area-efficiency and the yield, by stacking, capacitor electrodes via insulating layer, the number of stacked layers being more than or equal to a specified value. CONSTITUTION:In a p<-> region 3, a p<+> region 12 to make an ohmic contact is arranged. A voltage for inversely biasing the p-n junction between an n-type substrate 1 and an n<+> region 5 is applied to an electrode 10 for electric isolation. On the n<+> region 5, an electrode 6 of polysilicon turning to one electrode of a capacitor is formed via an insulating film 4. Further, polysilicon electrodes of more than or equal to three layers are stacked, sandwiching an interlayer insulating film 7. As an electrode 8 is brought into electrical contact with the n<+> region 5, a capacitor is constituted in which the electrode 6 serves as the other electrode. For example, in the case where the areas of the electrodes 6 and 8 are equal, and the materials and the thicknesses of an insulating film 4 and the interlayer insulating layer 7 are identical, a capacitor having the same occupied area with the usual structure can realize a two-fold capacitance.