JPS6422057A - Manufacture of multi-layer planar type capacitor - Google Patents

Manufacture of multi-layer planar type capacitor

Info

Publication number
JPS6422057A
JPS6422057A JP62179436A JP17943687A JPS6422057A JP S6422057 A JPS6422057 A JP S6422057A JP 62179436 A JP62179436 A JP 62179436A JP 17943687 A JP17943687 A JP 17943687A JP S6422057 A JPS6422057 A JP S6422057A
Authority
JP
Japan
Prior art keywords
polysilicon
capacitor
manufacture
type capacitor
high degree
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62179436A
Other languages
Japanese (ja)
Inventor
Nobuo Aoi
Masabumi Kubota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62179436A priority Critical patent/JPS6422057A/en
Publication of JPS6422057A publication Critical patent/JPS6422057A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To enable the high degree integration, by stacking three-dimensionally capacitor plates composed of polysilicon. CONSTITUTION:A P-type or an N-type silicon substrate, e.g., is used for a semiconductor 1. The title capacitor has a 4-layer polysilicon structure. Polysilicon B10 and A9, and polysilicon B10 and C11 are electrically insulated with an oxide film side-wall 7. The polysilicon A9 and the polysilicon C11 are brought into contact with each other by using polysilicon D12. Electric charge is stored in the polysilicon A9 and C11. Polysilicon E13 is the gate of a MOS transistor, and a drain 1D comes into contact with the polysilicon A9. By increasing the area of a capacitor plate in this fashion, the remarkably high degree integration is enabled as compared with prior planer type capacitors.
JP62179436A 1987-07-17 1987-07-17 Manufacture of multi-layer planar type capacitor Pending JPS6422057A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62179436A JPS6422057A (en) 1987-07-17 1987-07-17 Manufacture of multi-layer planar type capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62179436A JPS6422057A (en) 1987-07-17 1987-07-17 Manufacture of multi-layer planar type capacitor

Publications (1)

Publication Number Publication Date
JPS6422057A true JPS6422057A (en) 1989-01-25

Family

ID=16065831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62179436A Pending JPS6422057A (en) 1987-07-17 1987-07-17 Manufacture of multi-layer planar type capacitor

Country Status (1)

Country Link
JP (1) JPS6422057A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5036020A (en) * 1990-08-31 1991-07-30 Texas Instrument Incorporated Method of fabricating microelectronic device incorporating capacitor having lowered topographical profile
EP0449000A2 (en) * 1990-03-08 1991-10-02 Fujitsu Limited Layer structure having contact hole for fin-shaped capacitors in DRAMS and method of producing the same
US5145799A (en) * 1991-01-30 1992-09-08 Texas Instruments Incorporated Stacked capacitor SRAM cell
US5229314A (en) * 1990-05-01 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation
US5498561A (en) * 1990-11-30 1996-03-12 Nec Corporation Method of fabricating memory cell for semiconductor integrated circuit
US5623457A (en) * 1993-04-12 1997-04-22 Sony Corporation Photomagnetic disc drive system having a locking mechanism
US5633181A (en) * 1994-09-29 1997-05-27 Nec Corporation Fabrication method of semiconductor integrated circuit device having capacitors, bipolar transistors and igfets
US5891766A (en) * 1993-01-18 1999-04-06 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device and method of fabricating the same

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0449000A2 (en) * 1990-03-08 1991-10-02 Fujitsu Limited Layer structure having contact hole for fin-shaped capacitors in DRAMS and method of producing the same
US6528369B1 (en) 1990-03-08 2003-03-04 Fujitsu Limited Layer structure having contact hole and method of producing same
US6144058A (en) * 1990-03-08 2000-11-07 Fujitsu Limited Layer structure having contact hole, method of producing the same, fin-shaped capacitor using the layer structure, method of producing the fin-shaped capacitor and dynamic random access memory having the fin-shaped capacitor
US5705420A (en) * 1990-03-08 1998-01-06 Fujitsu Limited Method of producing a fin-shaped capacitor
US5229314A (en) * 1990-05-01 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation
US5036020A (en) * 1990-08-31 1991-07-30 Texas Instrument Incorporated Method of fabricating microelectronic device incorporating capacitor having lowered topographical profile
US5498561A (en) * 1990-11-30 1996-03-12 Nec Corporation Method of fabricating memory cell for semiconductor integrated circuit
US5145799A (en) * 1991-01-30 1992-09-08 Texas Instruments Incorporated Stacked capacitor SRAM cell
US6114728A (en) * 1993-01-18 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device having a tapered top gate and a capacitor with metal oxide dielectric material
US5891766A (en) * 1993-01-18 1999-04-06 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device and method of fabricating the same
US6417543B1 (en) 1993-01-18 2002-07-09 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device with sloped gate, source, and drain regions
US6984551B2 (en) 1993-01-18 2006-01-10 Semiconductor Energy Laboratory Co., Ltd. MIS semiconductor device and method of fabricating the same
US5623457A (en) * 1993-04-12 1997-04-22 Sony Corporation Photomagnetic disc drive system having a locking mechanism
US5633181A (en) * 1994-09-29 1997-05-27 Nec Corporation Fabrication method of semiconductor integrated circuit device having capacitors, bipolar transistors and igfets

Similar Documents

Publication Publication Date Title
GB1435589A (en) Field effect transistors
KR880011934A (en) Semiconductor device and manufacturing method thereof
GB1436975A (en) Semiconductor arrangements
JPS6422057A (en) Manufacture of multi-layer planar type capacitor
JPS6453574A (en) Semiconductor device
JPS6441262A (en) Memory cell
EP0154871A3 (en) One-transistor dynamic random-access memory
EP0263287A3 (en) Forming a capacitor in an integrated circuit
JPS6439069A (en) Field-effect transistor
ATE97259T1 (en) MEMORY CELL ARRANGEMENT FOR DYNAMIC SEMICONDUCTOR MEMORIES.
JPS6461070A (en) Semiconductor device
JPS644058A (en) Semiconductor integrated circuit device
JPS6425465A (en) Semiconductor storage device
JPS6410663A (en) Semiconductor device
TW266317B (en) Fabrication of W-polycide-to-poly capacitors with high linearity
JPS6425480A (en) Mos type semiconductor device
JPS6410657A (en) Input-protective device in complementary type mos device
JPS6481359A (en) Mos type semiconductor integrated circuit device
JPS6410664A (en) Photoelectric conversion device
JPS6414953A (en) Mis type semiconductor memory device
KR940012627A (en) Manufacturing method of capacitor of DRAM cell
JPS647661A (en) Semiconductor device
JPS56138946A (en) Semiconductor device
JPS641271A (en) Memory cell
JPS648662A (en) Supplementary semiconductor device