JPS6410664A - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPS6410664A JPS6410664A JP62165528A JP16552887A JPS6410664A JP S6410664 A JPS6410664 A JP S6410664A JP 62165528 A JP62165528 A JP 62165528A JP 16552887 A JP16552887 A JP 16552887A JP S6410664 A JPS6410664 A JP S6410664A
- Authority
- JP
- Japan
- Prior art keywords
- isolation region
- constituted
- photoelectric conversion
- oxide film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To increase largely numerical aperture as compared with usual devices, and obtain a signal having a large S/N ratio, by reducing an isolation region by forming a groove-type capacitor in the isolation region, and removing capacitor electrodes from on a light receiving surface. CONSTITUTION:A capacitor electrode 102 faces an upper and a lower p-base regions 3 via an oxide film 101, and drives a photoelectric conversion cell by controlling the electric potential of a p-base region 3. A part of the isolation region of the p-base region 3 in the horizontal direction is constituted of LOCOS oxide film 103, and the other part is constituted of a gate oxide film 7 and an electrode 8 of polysilicon formed on the film 7. That is, a p-channel MOS transistor Qc is constituted of the neighboring p-base region 3 and gate electrode 8, and neighboring cells in the horizontal direction are electrically isolated in the normal OFF state. By constituting a groove-type capacitor in the manner in which the capacitor electrode 102 is formed in the isolation region, the miniaturization of isolation region and the improvement of numerical apature of a photoelectric conversion cell can be realized.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62165528A JP2589312B2 (en) | 1987-07-03 | 1987-07-03 | Photoelectric conversion device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62165528A JP2589312B2 (en) | 1987-07-03 | 1987-07-03 | Photoelectric conversion device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6410664A true JPS6410664A (en) | 1989-01-13 |
JP2589312B2 JP2589312B2 (en) | 1997-03-12 |
Family
ID=15814104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62165528A Expired - Fee Related JP2589312B2 (en) | 1987-07-03 | 1987-07-03 | Photoelectric conversion device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2589312B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004153253A (en) * | 2002-10-11 | 2004-05-27 | Iwate Toshiba Electronics Co Ltd | Cmos image sensor |
CN108886048A (en) * | 2016-03-31 | 2018-11-23 | 索尼公司 | Photographic device, the manufacturing method of photographic device and electronic device |
KR20210134086A (en) * | 2014-12-08 | 2021-11-08 | 버클리 라잇츠, 인크. | Microfluidic device comprising lateral/vertical transistor structures and process of making and using same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61123172A (en) * | 1984-11-20 | 1986-06-11 | Olympus Optical Co Ltd | Solid-state image pickup device |
JPS61133660A (en) * | 1984-12-03 | 1986-06-20 | Olympus Optical Co Ltd | Solid state image sensor |
-
1987
- 1987-07-03 JP JP62165528A patent/JP2589312B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61123172A (en) * | 1984-11-20 | 1986-06-11 | Olympus Optical Co Ltd | Solid-state image pickup device |
JPS61133660A (en) * | 1984-12-03 | 1986-06-20 | Olympus Optical Co Ltd | Solid state image sensor |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004153253A (en) * | 2002-10-11 | 2004-05-27 | Iwate Toshiba Electronics Co Ltd | Cmos image sensor |
KR20210134086A (en) * | 2014-12-08 | 2021-11-08 | 버클리 라잇츠, 인크. | Microfluidic device comprising lateral/vertical transistor structures and process of making and using same |
US11596941B2 (en) | 2014-12-08 | 2023-03-07 | Berkeley Lights, Inc. | Lateral/vertical transistor structures and process of making and using same |
CN108886048A (en) * | 2016-03-31 | 2018-11-23 | 索尼公司 | Photographic device, the manufacturing method of photographic device and electronic device |
CN108886048B (en) * | 2016-03-31 | 2022-12-16 | 索尼公司 | Imaging device, method for manufacturing imaging device, and electronic device |
US11791200B2 (en) | 2016-03-31 | 2023-10-17 | Sony Group Corporation | Imaging device, method of manufacturing imaging device, and electronic device |
US11830766B2 (en) | 2016-03-31 | 2023-11-28 | Sony Group Corporation | Imaging device, method of manufacturing imaging device, and electronic device |
Also Published As
Publication number | Publication date |
---|---|
JP2589312B2 (en) | 1997-03-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |