JPS6410664A - Photoelectric conversion device - Google Patents

Photoelectric conversion device

Info

Publication number
JPS6410664A
JPS6410664A JP62165528A JP16552887A JPS6410664A JP S6410664 A JPS6410664 A JP S6410664A JP 62165528 A JP62165528 A JP 62165528A JP 16552887 A JP16552887 A JP 16552887A JP S6410664 A JPS6410664 A JP S6410664A
Authority
JP
Japan
Prior art keywords
isolation region
constituted
photoelectric conversion
oxide film
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62165528A
Other languages
Japanese (ja)
Other versions
JP2589312B2 (en
Inventor
Hiroshi Yuzurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62165528A priority Critical patent/JP2589312B2/en
Publication of JPS6410664A publication Critical patent/JPS6410664A/en
Application granted granted Critical
Publication of JP2589312B2 publication Critical patent/JP2589312B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To increase largely numerical aperture as compared with usual devices, and obtain a signal having a large S/N ratio, by reducing an isolation region by forming a groove-type capacitor in the isolation region, and removing capacitor electrodes from on a light receiving surface. CONSTITUTION:A capacitor electrode 102 faces an upper and a lower p-base regions 3 via an oxide film 101, and drives a photoelectric conversion cell by controlling the electric potential of a p-base region 3. A part of the isolation region of the p-base region 3 in the horizontal direction is constituted of LOCOS oxide film 103, and the other part is constituted of a gate oxide film 7 and an electrode 8 of polysilicon formed on the film 7. That is, a p-channel MOS transistor Qc is constituted of the neighboring p-base region 3 and gate electrode 8, and neighboring cells in the horizontal direction are electrically isolated in the normal OFF state. By constituting a groove-type capacitor in the manner in which the capacitor electrode 102 is formed in the isolation region, the miniaturization of isolation region and the improvement of numerical apature of a photoelectric conversion cell can be realized.
JP62165528A 1987-07-03 1987-07-03 Photoelectric conversion device Expired - Fee Related JP2589312B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62165528A JP2589312B2 (en) 1987-07-03 1987-07-03 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62165528A JP2589312B2 (en) 1987-07-03 1987-07-03 Photoelectric conversion device

Publications (2)

Publication Number Publication Date
JPS6410664A true JPS6410664A (en) 1989-01-13
JP2589312B2 JP2589312B2 (en) 1997-03-12

Family

ID=15814104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62165528A Expired - Fee Related JP2589312B2 (en) 1987-07-03 1987-07-03 Photoelectric conversion device

Country Status (1)

Country Link
JP (1) JP2589312B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004153253A (en) * 2002-10-11 2004-05-27 Iwate Toshiba Electronics Co Ltd Cmos image sensor
CN108886048A (en) * 2016-03-31 2018-11-23 索尼公司 Photographic device, the manufacturing method of photographic device and electronic device
KR20210134086A (en) * 2014-12-08 2021-11-08 버클리 라잇츠, 인크. Microfluidic device comprising lateral/vertical transistor structures and process of making and using same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123172A (en) * 1984-11-20 1986-06-11 Olympus Optical Co Ltd Solid-state image pickup device
JPS61133660A (en) * 1984-12-03 1986-06-20 Olympus Optical Co Ltd Solid state image sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61123172A (en) * 1984-11-20 1986-06-11 Olympus Optical Co Ltd Solid-state image pickup device
JPS61133660A (en) * 1984-12-03 1986-06-20 Olympus Optical Co Ltd Solid state image sensor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004153253A (en) * 2002-10-11 2004-05-27 Iwate Toshiba Electronics Co Ltd Cmos image sensor
KR20210134086A (en) * 2014-12-08 2021-11-08 버클리 라잇츠, 인크. Microfluidic device comprising lateral/vertical transistor structures and process of making and using same
US11596941B2 (en) 2014-12-08 2023-03-07 Berkeley Lights, Inc. Lateral/vertical transistor structures and process of making and using same
CN108886048A (en) * 2016-03-31 2018-11-23 索尼公司 Photographic device, the manufacturing method of photographic device and electronic device
CN108886048B (en) * 2016-03-31 2022-12-16 索尼公司 Imaging device, method for manufacturing imaging device, and electronic device
US11791200B2 (en) 2016-03-31 2023-10-17 Sony Group Corporation Imaging device, method of manufacturing imaging device, and electronic device
US11830766B2 (en) 2016-03-31 2023-11-28 Sony Group Corporation Imaging device, method of manufacturing imaging device, and electronic device

Also Published As

Publication number Publication date
JP2589312B2 (en) 1997-03-12

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees