JPS6476037A - Thin film transistor panel - Google Patents

Thin film transistor panel

Info

Publication number
JPS6476037A
JPS6476037A JP23336887A JP23336887A JPS6476037A JP S6476037 A JPS6476037 A JP S6476037A JP 23336887 A JP23336887 A JP 23336887A JP 23336887 A JP23336887 A JP 23336887A JP S6476037 A JPS6476037 A JP S6476037A
Authority
JP
Japan
Prior art keywords
gate electrode
image signal
electrode
signal accumulating
accumulating capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23336887A
Other languages
Japanese (ja)
Other versions
JPH0617955B2 (en
Inventor
Shunichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP23336887A priority Critical patent/JPH0617955B2/en
Publication of JPS6476037A publication Critical patent/JPS6476037A/en
Publication of JPH0617955B2 publication Critical patent/JPH0617955B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode

Abstract

PURPOSE:To constitute the titled panel so that the capacity of an image signal accumulating capacitor can be enlarged, and the floating capacity between a gate and a ground can be made small by covering a gate electrode formed on a transparent electrode of the image signal accumulating capacitor in the vicinity of the gate electrode on this transparent insulating film. CONSTITUTION:A transparent insulating film 23 is formed so as to cover a gate electrode 22 formed on a transparent insulating substrate 21, and on this transparent insulating film 23, a transparent conductive film 24 of an image signal accumulating capacitor is formed in the vicinity of the gate electrode 22. In such a way, by widening an area of the transparent conductive film 24, the capacity of the capacitor can be enlarged, and also, a change of a short circuit of the gate electrode 22 and the electrode of the image signal accumulating capacitor is also decreased. Moreover, since the electrode of the image signal accumulating capacitor is formed by decreasing an overlap part in a position excluding the upper part of the gate electrode 22, the floating capacity between a gate and a ground becomes small.
JP23336887A 1987-09-17 1987-09-17 Thin film transistor panel Expired - Lifetime JPH0617955B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23336887A JPH0617955B2 (en) 1987-09-17 1987-09-17 Thin film transistor panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23336887A JPH0617955B2 (en) 1987-09-17 1987-09-17 Thin film transistor panel

Publications (2)

Publication Number Publication Date
JPS6476037A true JPS6476037A (en) 1989-03-22
JPH0617955B2 JPH0617955B2 (en) 1994-03-09

Family

ID=16954036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23336887A Expired - Lifetime JPH0617955B2 (en) 1987-09-17 1987-09-17 Thin film transistor panel

Country Status (1)

Country Link
JP (1) JPH0617955B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2682492A1 (en) * 1991-10-11 1993-04-16 Thomson Lcd ACTIVE MATRIX DISPLAY USING AN UNDERGROUND MASS PLAN.
EP0537917A1 (en) * 1991-10-15 1993-04-21 General Electric Company Active matrix LCD with buried ground plane
US5208690A (en) * 1990-03-24 1993-05-04 Sony Corporation Liquid crystal display having a plurality of pixels with switching transistors
JP2007256914A (en) * 2006-02-21 2007-10-04 Seiko Epson Corp Active matrix substrate, electro-optic device and electronic apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208690A (en) * 1990-03-24 1993-05-04 Sony Corporation Liquid crystal display having a plurality of pixels with switching transistors
FR2682492A1 (en) * 1991-10-11 1993-04-16 Thomson Lcd ACTIVE MATRIX DISPLAY USING AN UNDERGROUND MASS PLAN.
EP0537917A1 (en) * 1991-10-15 1993-04-21 General Electric Company Active matrix LCD with buried ground plane
JP2007256914A (en) * 2006-02-21 2007-10-04 Seiko Epson Corp Active matrix substrate, electro-optic device and electronic apparatus

Also Published As

Publication number Publication date
JPH0617955B2 (en) 1994-03-09

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