GB2001472A - Integrated circuit devices including a structure for crossing information signals - Google Patents

Integrated circuit devices including a structure for crossing information signals

Info

Publication number
GB2001472A
GB2001472A GB7830229A GB7830229A GB2001472A GB 2001472 A GB2001472 A GB 2001472A GB 7830229 A GB7830229 A GB 7830229A GB 7830229 A GB7830229 A GB 7830229A GB 2001472 A GB2001472 A GB 2001472A
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
ion
polycrystalline silicon
implanted region
devices including
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7830229A
Other versions
GB2001472B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CTU of Delaware Inc
Original Assignee
Mostek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mostek Corp filed Critical Mostek Corp
Publication of GB2001472A publication Critical patent/GB2001472A/en
Application granted granted Critical
Publication of GB2001472B publication Critical patent/GB2001472B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Waveguides (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

A highly conductive polycrystalline silicon strip 20 forms a first signal-carrying line at a level above a substrate 12 in an integrated circuit device. Disposed in a portion of the substrate thereunder is an ion- implanted region 26 of a conductivity type opposite from that of the substrate starting material. The ion- implanted region is joined by diffused regions 28, 30 on opposite sides of the polycrystalline silicon strip. The diffused regions are of the same conductivity type as the ion-implanted region, thereby forming a second signal-carrying line preferably running transversely to and crossing under the polycrystalline silicon strip. <IMAGE>
GB7830229A 1977-07-18 1978-07-18 Integrated circuit devices including a structure for crossing information signals Expired GB2001472B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81636577A 1977-07-18 1977-07-18

Publications (2)

Publication Number Publication Date
GB2001472A true GB2001472A (en) 1979-01-31
GB2001472B GB2001472B (en) 1982-02-17

Family

ID=25220405

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7830229A Expired GB2001472B (en) 1977-07-18 1978-07-18 Integrated circuit devices including a structure for crossing information signals

Country Status (5)

Country Link
JP (2) JPS5496384A (en)
DE (1) DE2831523A1 (en)
FR (1) FR2398386A1 (en)
GB (1) GB2001472B (en)
IT (1) IT1097967B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5550652A (en) * 1978-09-19 1980-04-12 Agency Of Ind Science & Technol Composite element adjusting method by ion beam
US4381595A (en) * 1979-10-09 1983-05-03 Mitsubishi Denki Kabushiki Kaisha Process for preparing multilayer interconnection

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3921282A (en) * 1971-02-16 1975-11-25 Texas Instruments Inc Insulated gate field effect transistor circuits and their method of fabrication
US3751722A (en) * 1971-04-30 1973-08-07 Standard Microsyst Smc Mos integrated circuit with substrate containing selectively formed resistivity regions
JPS5947464B2 (en) * 1974-09-11 1984-11-19 株式会社日立製作所 semiconductor equipment
US4013489A (en) * 1976-02-10 1977-03-22 Intel Corporation Process for forming a low resistance interconnect in MOS N-channel silicon gate integrated circuit
US4035198A (en) * 1976-06-30 1977-07-12 International Business Machines Corporation Method of fabricating field effect transistors having self-registering electrical connections between gate electrodes and metallic interconnection lines, and fabrication of integrated circuits containing the transistors

Also Published As

Publication number Publication date
IT1097967B (en) 1985-08-31
GB2001472B (en) 1982-02-17
FR2398386B1 (en) 1984-03-23
FR2398386A1 (en) 1979-02-16
IT7825819A0 (en) 1978-07-17
DE2831523A1 (en) 1979-02-01
JPS59112944U (en) 1984-07-30
JPS5496384A (en) 1979-07-30

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee