JPS6477158A - Memory device - Google Patents

Memory device

Info

Publication number
JPS6477158A
JPS6477158A JP62232576A JP23257687A JPS6477158A JP S6477158 A JPS6477158 A JP S6477158A JP 62232576 A JP62232576 A JP 62232576A JP 23257687 A JP23257687 A JP 23257687A JP S6477158 A JPS6477158 A JP S6477158A
Authority
JP
Japan
Prior art keywords
electrode
upper electrode
impurity region
area
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62232576A
Other languages
Japanese (ja)
Other versions
JP2671315B2 (en
Inventor
Hideaki Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62232576A priority Critical patent/JP2671315B2/en
Publication of JPS6477158A publication Critical patent/JPS6477158A/en
Application granted granted Critical
Publication of JP2671315B2 publication Critical patent/JP2671315B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To increase an upper electrode of a capacitor in area and decrease a cell in area by a method wherein an electrode is made to extend to an impurity region where the electrode is connected with a bit wire of a switching transistor. CONSTITUTION:A lower electrode 7 is made to extend onto an interlaminar insulating film 8 which covers a gate electrode 5 and furthermore to an interlaminar insulating film 10 which covers a gate electrode 9 of an adjacent memory cell. An upper electrode 11 is formed on the lower electrode 7 through the intermediary of a dielectric layer so as to constitute a laminated type capacitor. The upper electrode 11 is formed of a third polycrystalline silicon layer and especially extended to a part of the other impurity region 4 of a switching transistor. That is, an end 11a of the above upper electrode 11 is extended to a part of the other impurity region 4 where the end 1a is made to be in contact with a bit wire, so that a capacitor can be increased in area.
JP62232576A 1987-09-18 1987-09-18 Memory device Expired - Fee Related JP2671315B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62232576A JP2671315B2 (en) 1987-09-18 1987-09-18 Memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62232576A JP2671315B2 (en) 1987-09-18 1987-09-18 Memory device

Publications (2)

Publication Number Publication Date
JPS6477158A true JPS6477158A (en) 1989-03-23
JP2671315B2 JP2671315B2 (en) 1997-10-29

Family

ID=16941513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62232576A Expired - Fee Related JP2671315B2 (en) 1987-09-18 1987-09-18 Memory device

Country Status (1)

Country Link
JP (1) JP2671315B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02304970A (en) * 1989-05-19 1990-12-18 Nec Corp Manufacture of semiconductor device
JPH04192357A (en) * 1990-07-23 1992-07-10 Matsushita Electron Corp Semiconductor storage device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097664A (en) * 1983-11-01 1985-05-31 Fujitsu Ltd Semiconductor memory
JPS6110271A (en) * 1985-05-02 1986-01-17 Hitachi Ltd Semiconductor device
JPS61229353A (en) * 1985-02-12 1986-10-13 エスジェーエス―トムソン　ミクロエレクトロニクス　ソシエテ　アノニム Integrated circuit type dynamic memory
JPS63199455A (en) * 1987-02-16 1988-08-17 Toshiba Corp Semiconductor memory

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6097664A (en) * 1983-11-01 1985-05-31 Fujitsu Ltd Semiconductor memory
JPS61229353A (en) * 1985-02-12 1986-10-13 エスジェーエス―トムソン　ミクロエレクトロニクス　ソシエテ　アノニム Integrated circuit type dynamic memory
JPS6110271A (en) * 1985-05-02 1986-01-17 Hitachi Ltd Semiconductor device
JPS63199455A (en) * 1987-02-16 1988-08-17 Toshiba Corp Semiconductor memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02304970A (en) * 1989-05-19 1990-12-18 Nec Corp Manufacture of semiconductor device
JPH04192357A (en) * 1990-07-23 1992-07-10 Matsushita Electron Corp Semiconductor storage device

Also Published As

Publication number Publication date
JP2671315B2 (en) 1997-10-29

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees