JPS6411347A - Monolithic integrated circuit - Google Patents

Abstract

PURPOSE:To form a capacitor with a relatively large capacity by intervening a silicon nitride film having a high dielectirc constant between lower and upper electrode layers composing the capacitor. CONSTITUTION:A bipolar transistor which is composed of a diffused layer 10, an epitaxial layer 11, a base diffused layer 12, an emitter diffused layer 13, and a collector layer 14 is formed at the surface part of a silicon substrate 1. The first interconnecion conductive layers 4a, 4b, and 4c corresponding to the collector, emitter, and base of the transistor are formed through openings which are formed at specific places of a silicon interface protective film 3. The lower electrode layer 3 which composes one side of electrodes of a capacitor is formed at the upper part of the interface protective film 2 and a part of the lower electrode layer 3 and the first interconnecion conductive layers 4a, 4b, and 4c are coated with an insulating film containing silicon oxide. A contact hole H is formed at the part of the insulating film 5 anc a silicon nitride film 6 is formed on the whole surface of the insulating film and on its film 6 an upper electrode layer 7 and the second interconnection conductive layer 8 are formed respectively. As the lower and upper electrode layers 3 and 7 have relatively thin films and are facing each other, thereby intervening only the silicon nitride film 6 having a high dielectric constant between two electrodes, a capacitor with a relatively large capacity is formed.