JPS56122162A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS56122162A
JPS56122162A JP2641080A JP2641080A JPS56122162A JP S56122162 A JPS56122162 A JP S56122162A JP 2641080 A JP2641080 A JP 2641080A JP 2641080 A JP2641080 A JP 2641080A JP S56122162 A JPS56122162 A JP S56122162A
Authority
JP
Japan
Prior art keywords
layer
diffused layer
emitter
base
diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2641080A
Other languages
Japanese (ja)
Other versions
JPS6030111B2 (en
Inventor
Jiro Oshima
Yutaka Etsuno
Shunichi Kai
Takashi Yasujima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55026410A priority Critical patent/JPS6030111B2/en
Publication of JPS56122162A publication Critical patent/JPS56122162A/en
Publication of JPS6030111B2 publication Critical patent/JPS6030111B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the yield of manufacturing a semiconductor device by forming pickup electrode through oxidation resistant films on the surface of base, emitter and collector diffused layers, thereby eliminating the step of forming contact holes therefor. CONSTITUTION:An N type conductivity type emitter diffused layer 15 is formed on a predetermined region of a base diffused layer 13 in a predetermined diffusion depth from the surface. An oxide film 16 is so formed on the surface of an epitaxial growth layer 12 as to insulate and isolate the base diffused layer 13, the emitter diffused layer 15 and the collector diffused layer 14. Pickup electrodes 18 are formed through oxidation resistant layer 17 having conductivity on the surfaces of the layers 13, 14 and 15. The oxide film 17 is formed of conductive metal (such as W, Mo, V, and Ti) and silicon carbide. Reference numeral 10 in the drawing represents a P-type conductivity type semiconductor substrate, and 11 represents a buried layer.
JP55026410A 1980-03-03 1980-03-03 semiconductor equipment Expired JPS6030111B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55026410A JPS6030111B2 (en) 1980-03-03 1980-03-03 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55026410A JPS6030111B2 (en) 1980-03-03 1980-03-03 semiconductor equipment

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP18411284A Division JPS6074476A (en) 1984-09-03 1984-09-03 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56122162A true JPS56122162A (en) 1981-09-25
JPS6030111B2 JPS6030111B2 (en) 1985-07-15

Family

ID=12192774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55026410A Expired JPS6030111B2 (en) 1980-03-03 1980-03-03 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS6030111B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893261A (en) * 1981-11-30 1983-06-02 Toshiba Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893261A (en) * 1981-11-30 1983-06-02 Toshiba Corp Manufacture of semiconductor device
JPH0570301B2 (en) * 1981-11-30 1993-10-04 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS6030111B2 (en) 1985-07-15

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