JPS5493366A - Bipolar type transistor - Google Patents

Bipolar type transistor

Info

Publication number
JPS5493366A
JPS5493366A JP15885877A JP15885877A JPS5493366A JP S5493366 A JPS5493366 A JP S5493366A JP 15885877 A JP15885877 A JP 15885877A JP 15885877 A JP15885877 A JP 15885877A JP S5493366 A JPS5493366 A JP S5493366A
Authority
JP
Japan
Prior art keywords
layer
type
region
substrate
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15885877A
Other languages
Japanese (ja)
Other versions
JPS5940298B2 (en
Inventor
Hisakazu Mukai
Tetsushi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP52158858A priority Critical patent/JPS5940298B2/en
Publication of JPS5493366A publication Critical patent/JPS5493366A/en
Publication of JPS5940298B2 publication Critical patent/JPS5940298B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To establish the bipolar transistor small in parasitic capacitance and small in size, by providing the layer of opposite conduction type as the substrate, between the base and collector region and the semiconductor substrate being the emitter. CONSTITUTION:The insulation layer 3 is coated on the P type semiconductor substrate 6, window is opened, and the thickness of the substrate 6 in the window 2 is made thin with etching and the thinned part is implanted with the N<+> type region. Next, the N type layer 7 is grown on the entire surface, it is covered with the insulation layer 1, window is again opened, the P type region 5 is formed by diffusion in the layer 7, a part of it is covered with the insulation layer, forming the N<+> region 6 in the region 5 by diffusion. After that, the conductive layers 10 and 11 leading on the layer 1 while contacting with the regions 8 and 10 are coated, constituting the bipolar type transistor Q taking the regions 5,6 and the substrate 6 as base, collector and emitter respectively. Thus, since the N type layer 7 is placed on the transistor, the electric leading out is made easy and the parasitic capacitance can be reduced.
JP52158858A 1977-12-30 1977-12-30 bipolar transistor Expired JPS5940298B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52158858A JPS5940298B2 (en) 1977-12-30 1977-12-30 bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52158858A JPS5940298B2 (en) 1977-12-30 1977-12-30 bipolar transistor

Publications (2)

Publication Number Publication Date
JPS5493366A true JPS5493366A (en) 1979-07-24
JPS5940298B2 JPS5940298B2 (en) 1984-09-29

Family

ID=15680930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52158858A Expired JPS5940298B2 (en) 1977-12-30 1977-12-30 bipolar transistor

Country Status (1)

Country Link
JP (1) JPS5940298B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55118665A (en) * 1979-03-06 1980-09-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPS55130138A (en) * 1979-03-29 1980-10-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and its manufacturing method
JPS55151350A (en) * 1979-05-16 1980-11-25 Mitsubishi Electric Corp Semiconductor device and fabricating method of the same
JPS5654064A (en) * 1979-10-08 1981-05-13 Mitsubishi Electric Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029184A (en) * 1973-07-17 1975-03-25
JPS52119874A (en) * 1976-04-02 1977-10-07 Hitachi Ltd Semi-conductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5029184A (en) * 1973-07-17 1975-03-25
JPS52119874A (en) * 1976-04-02 1977-10-07 Hitachi Ltd Semi-conductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55118665A (en) * 1979-03-06 1980-09-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
JPS6346582B2 (en) * 1979-03-06 1988-09-16 Cho Eru Esu Ai Gijutsu Kenkyu Kumiai
JPS55130138A (en) * 1979-03-29 1980-10-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and its manufacturing method
JPS55151350A (en) * 1979-05-16 1980-11-25 Mitsubishi Electric Corp Semiconductor device and fabricating method of the same
JPS5654064A (en) * 1979-10-08 1981-05-13 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5940298B2 (en) 1984-09-29

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