JPS5721860A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5721860A JPS5721860A JP9613480A JP9613480A JPS5721860A JP S5721860 A JPS5721860 A JP S5721860A JP 9613480 A JP9613480 A JP 9613480A JP 9613480 A JP9613480 A JP 9613480A JP S5721860 A JPS5721860 A JP S5721860A
- Authority
- JP
- Japan
- Prior art keywords
- base
- emitter
- semiconductor device
- type
- approx
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000002955 isolation Methods 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To improve the high frequency characteristics of a semiconductor device of a bipolar transistor by retaining an insulating film at an infinitesimal distance on the boundary between the emitter and the base, thereby reducing the base resistance and the capacity between the base and the emitter. CONSTITUTION:This semiconductor device has a p type semiconductor substrate 1, an n<+> type buried layer 2, an n type epitaxial layer 3, a p type isolation diffused region 4, a collector contact diffused part 5, a base layer 6 and an emitter 8, and an insulating film 8 of approx. 3000Angstrom thick for contacting hole is retained on the surface on the boundary between the emitter and the base at the infinitesimal distance 8' of approx. 2mum. Further, conductive polysilicons 9, 9' are formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9613480A JPS5721860A (en) | 1980-07-14 | 1980-07-14 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9613480A JPS5721860A (en) | 1980-07-14 | 1980-07-14 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5721860A true JPS5721860A (en) | 1982-02-04 |
Family
ID=14156914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9613480A Pending JPS5721860A (en) | 1980-07-14 | 1980-07-14 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5721860A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61231761A (en) * | 1985-04-08 | 1986-10-16 | Hitachi Ltd | Semiconductor device |
-
1980
- 1980-07-14 JP JP9613480A patent/JPS5721860A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61231761A (en) * | 1985-04-08 | 1986-10-16 | Hitachi Ltd | Semiconductor device |
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