KR910010755A - 비정질실리콘 태양전지 - Google Patents

비정질실리콘 태양전지 Download PDF

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Publication number
KR910010755A
KR910010755A KR1019890017613A KR890017613A KR910010755A KR 910010755 A KR910010755 A KR 910010755A KR 1019890017613 A KR1019890017613 A KR 1019890017613A KR 890017613 A KR890017613 A KR 890017613A KR 910010755 A KR910010755 A KR 910010755A
Authority
KR
South Korea
Prior art keywords
amorphous silicon
solar cell
type
silicon solar
junction structure
Prior art date
Application number
KR1019890017613A
Other languages
English (en)
Other versions
KR0138150B1 (ko
Inventor
마석범
Original Assignee
강진구
삼성전관 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 강진구, 삼성전관 주식회사 filed Critical 강진구
Priority to KR1019890017613A priority Critical patent/KR0138150B1/ko
Publication of KR910010755A publication Critical patent/KR910010755A/ko
Application granted granted Critical
Publication of KR0138150B1 publication Critical patent/KR0138150B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

내용 없음

Description

비정질실리콘 태양전지
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 단면도.

Claims (2)

  1. N형과 P형 비정질실리콘층의 접합구조를 갖는 태양전지와 p형 i형 n형 비정질실리콘층의 접합구조를 갖는 태양전기가 직렬연결상태로 적층된 유리기판/투명전도막/n-p-i-n형 비정질실리콘/Al금속전극 구조의 비정질 실리콘 태양전지.
  2. 제1항에 있어서 n형과 p형 비정질실리콘층의 두께를 50-200Å으로 하는 비정질 실리콘 태양전지.
    ※ 참고 사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890017613A 1989-11-30 1989-11-30 비정질실리콘 태양전지 KR0138150B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890017613A KR0138150B1 (ko) 1989-11-30 1989-11-30 비정질실리콘 태양전지

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890017613A KR0138150B1 (ko) 1989-11-30 1989-11-30 비정질실리콘 태양전지

Publications (2)

Publication Number Publication Date
KR910010755A true KR910010755A (ko) 1991-06-29
KR0138150B1 KR0138150B1 (ko) 1998-04-28

Family

ID=19292371

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890017613A KR0138150B1 (ko) 1989-11-30 1989-11-30 비정질실리콘 태양전지

Country Status (1)

Country Link
KR (1) KR0138150B1 (ko)

Also Published As

Publication number Publication date
KR0138150B1 (ko) 1998-04-28

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