KR920007254A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR920007254A
KR920007254A KR1019910014712A KR910014712A KR920007254A KR 920007254 A KR920007254 A KR 920007254A KR 1019910014712 A KR1019910014712 A KR 1019910014712A KR 910014712 A KR910014712 A KR 910014712A KR 920007254 A KR920007254 A KR 920007254A
Authority
KR
South Korea
Prior art keywords
photodiode
semiconductor device
prism
photodiodes
disposed
Prior art date
Application number
KR1019910014712A
Other languages
English (en)
Other versions
KR100215302B1 (ko
Inventor
요시가즈 히라이
Original Assignee
오가 노리오
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR920007254A publication Critical patent/KR920007254A/ko
Application granted granted Critical
Publication of KR100215302B1 publication Critical patent/KR100215302B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명에 의한 반도체장치의 일예를 도시한 구성도,
제2도A~E는 그 제법예의 제조공정도.

Claims (2)

  1. 복수의 포토다이오드를 내장하고, 상면에 프리즘이 배치되는 반도체장치에 있어서, 상기 하나의 포토다이오드의 면상에 제1 및 제2의 광학막이 적충형성되고, 상기 다른 포토다이오드의 면상에 상기 제1의 광학막이 형성되는 동시에, 이 포토다이오드이 주변에 상기 제2의 광학막이 형성되어 이루어지는 반도체장치.
  2. 복수의 포토다이오드를 내장하고, 상면에 프리즘이 배치되는 반도체장치에 있어서, 상기 포토다이오드의 주변에 형성된 차광용 금속층상에, 스트레스가 작고 또한 상기 프리즘과의 접착성이 양호한 절연막이 피착형성되어 이루어지는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910014712A 1990-09-07 1991-08-24 반도체장치 KR100215302B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2238099A JP2861340B2 (ja) 1990-09-07 1990-09-07 半導体装置
JP90-238099 1990-09-07

Publications (2)

Publication Number Publication Date
KR920007254A true KR920007254A (ko) 1992-04-28
KR100215302B1 KR100215302B1 (ko) 1999-08-16

Family

ID=17025160

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910014712A KR100215302B1 (ko) 1990-09-07 1991-08-24 반도체장치

Country Status (5)

Country Link
US (1) US5262667A (ko)
EP (1) EP0474051B1 (ko)
JP (1) JP2861340B2 (ko)
KR (1) KR100215302B1 (ko)
DE (1) DE69126388T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100755629B1 (ko) * 2001-11-14 2007-09-04 매그나칩 반도체 유한회사 포토다이오드의 제조 방법

Families Citing this family (14)

* Cited by examiner, † Cited by third party
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US7830587B2 (en) * 1993-03-17 2010-11-09 Qualcomm Mems Technologies, Inc. Method and device for modulating light with semiconductor substrate
US6674562B1 (en) 1994-05-05 2004-01-06 Iridigm Display Corporation Interferometric modulation of radiation
US8081369B2 (en) * 1994-05-05 2011-12-20 Qualcomm Mems Technologies, Inc. System and method for a MEMS device
US7839556B2 (en) * 1994-05-05 2010-11-23 Qualcomm Mems Technologies, Inc. Method and device for modulating light
US8014059B2 (en) 1994-05-05 2011-09-06 Qualcomm Mems Technologies, Inc. System and method for charge control in a MEMS device
US7826120B2 (en) * 1994-05-05 2010-11-02 Qualcomm Mems Technologies, Inc. Method and device for multi-color interferometric modulation
JP3016371B2 (ja) * 1997-03-26 2000-03-06 日本電気株式会社 光検出器の製造方法
WO1999052006A2 (en) 1998-04-08 1999-10-14 Etalon, Inc. Interferometric modulation of radiation
US8928967B2 (en) * 1998-04-08 2015-01-06 Qualcomm Mems Technologies, Inc. Method and device for modulating light
JP2002151729A (ja) * 2000-11-13 2002-05-24 Sony Corp 半導体装置及びその製造方法
JP4920839B2 (ja) * 2001-09-18 2012-04-18 キヤノン株式会社 撮像装置
US7175777B1 (en) * 2003-12-02 2007-02-13 National Semiconductor Corporation Method of forming a sub-micron tip feature
JP2005286094A (ja) * 2004-03-30 2005-10-13 Sanyo Electric Co Ltd 光半導体集積回路装置
US7916980B2 (en) 2006-01-13 2011-03-29 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device

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NL7007171A (ko) * 1970-05-16 1971-11-18
US4078243A (en) * 1975-12-12 1978-03-07 International Business Machines Corporation Phototransistor array having uniform current response and method of manufacture
US4234792A (en) * 1977-09-29 1980-11-18 Raytheon Company Scintillator crystal radiation detector
JPS57104275A (en) * 1980-12-19 1982-06-29 Nec Corp Light receiving element
GB2095905B (en) * 1981-03-27 1985-01-16 Philips Electronic Associated Infra-red radiation imaging devices and methods for their manufacture
JPS59143362A (ja) * 1983-02-03 1984-08-16 Fuji Xerox Co Ltd パツシベ−シヨン膜
US4621275A (en) * 1983-04-30 1986-11-04 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device
US4694185A (en) * 1986-04-18 1987-09-15 Eastman Kodak Company Light sensing devices with lenticular pixels
JP2757985B2 (ja) * 1986-10-01 1998-05-25 ソニー株式会社 受光装置とその製造方法
JP2541249B2 (ja) * 1987-11-24 1996-10-09 ソニー株式会社 光集積回路装置
JPH1136391A (ja) * 1997-07-19 1999-02-09 Toto Ltd 水栓連結具及び水栓取付け具

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100755629B1 (ko) * 2001-11-14 2007-09-04 매그나칩 반도체 유한회사 포토다이오드의 제조 방법

Also Published As

Publication number Publication date
DE69126388D1 (de) 1997-07-10
JP2861340B2 (ja) 1999-02-24
EP0474051A2 (en) 1992-03-11
US5262667A (en) 1993-11-16
KR100215302B1 (ko) 1999-08-16
JPH04119535A (ja) 1992-04-21
EP0474051A3 (en) 1993-03-10
DE69126388T2 (de) 1998-01-22
EP0474051B1 (en) 1997-06-04

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