NL7007171A - - Google Patents
Info
- Publication number
- NL7007171A NL7007171A NL7007171A NL7007171A NL7007171A NL 7007171 A NL7007171 A NL 7007171A NL 7007171 A NL7007171 A NL 7007171A NL 7007171 A NL7007171 A NL 7007171A NL 7007171 A NL7007171 A NL 7007171A
- Authority
- NL
- Netherlands
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
- H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/036—Diffusion, nonselective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/143—Shadow masking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/172—Vidicons
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/917—Plural dopants of same conductivity type in same region
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/926—Elongated lead extending axially through another elongated lead
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Light Receiving Elements (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7007171A NL7007171A (ko) | 1970-05-16 | 1970-05-16 | |
| US00140734A US3737701A (en) | 1970-05-16 | 1971-05-06 | Camera tube having a semiconductor target with pn mosaic regions covered by a continuous perforated conductive layer |
| DE19712123149 DE2123149A1 (de) | 1970-05-16 | 1971-05-11 | Elektronenröhre, insbesondere Aufnahmeröhre, mit einer von einem Elektronenstrahl abzutastenden strahlungsempfindlichen durch eine Halbleiterscheibe gebildeten Auftreffplatte, eine Auftreffplatte zur Anwendung in dieser Vorrichtung, und ein Verfahren zur Herstellung einer derartigen Auftreffplatte |
| JP46031643A JPS5245167B1 (ko) | 1970-05-16 | 1971-05-13 | |
| GB1469571*[A GB1350696A (en) | 1970-05-16 | 1971-05-13 | Photo-sensitive target for an electron tube which employs a scanning electron beam in operation |
| FR7117764A FR2091691A5 (ko) | 1970-05-16 | 1971-05-17 | |
| US545620*A US3916509A (en) | 1970-05-16 | 1975-01-30 | Method of manufacturing a semi-conductor target for a camera tube having a mosaic of p-n junctions covered by a perforated conductive layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7007171A NL7007171A (ko) | 1970-05-16 | 1970-05-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7007171A true NL7007171A (ko) | 1971-11-18 |
Family
ID=19810099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7007171A NL7007171A (ko) | 1970-05-16 | 1970-05-16 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US3737701A (ko) |
| JP (1) | JPS5245167B1 (ko) |
| DE (1) | DE2123149A1 (ko) |
| FR (1) | FR2091691A5 (ko) |
| GB (1) | GB1350696A (ko) |
| NL (1) | NL7007171A (ko) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7202478A (ko) * | 1972-02-25 | 1973-08-28 | ||
| CA967220A (en) * | 1972-04-04 | 1975-05-06 | Dieter K. Schroder | Charge storage target and method of manufacture |
| JPS4910614A (ko) * | 1972-05-24 | 1974-01-30 | ||
| US3787720A (en) * | 1973-03-28 | 1974-01-22 | Hughes Aircraft Co | Semiconductor vidicon and process for fabricating same |
| US3956662A (en) * | 1973-04-30 | 1976-05-11 | Tektronix, Inc. | Cathode ray storage tube having a target dielectric provided with particulate segments of collector electrode extending therethrough |
| US3893157A (en) * | 1973-06-04 | 1975-07-01 | Signetics Corp | Semiconductor target with integral beam shield |
| CA1022595A (en) * | 1974-04-22 | 1977-12-13 | Alfred B. Laponsky | Deep-etch metal cap silicon diode array target with porous caps |
| US3973270A (en) * | 1974-10-30 | 1976-08-03 | Westinghouse Electric Corporation | Charge storage target and method of manufacture |
| US4005452A (en) * | 1974-11-15 | 1977-01-25 | International Telephone And Telegraph Corporation | Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby |
| JPS52125289A (en) * | 1976-04-13 | 1977-10-20 | Akai Electric | Method of masking thinned layer of camera tube target |
| US4122483A (en) * | 1977-09-30 | 1978-10-24 | Rca Corporation | Semiconductor device having reduced leakage current |
| FR2430063A2 (fr) * | 1978-06-29 | 1980-01-25 | Thomson Csf | Dispositif acoustique a memoire, pour la correlation notamment, de deux signaux haute frequence, procede de realisation du reseau de diodes utilise dans un tel dispositif et correlateur acoustique a memoire comportant un tel dispositif |
| US4319258A (en) * | 1980-03-07 | 1982-03-09 | General Dynamics, Pomona Division | Schottky barrier photovoltaic detector |
| JPS593982A (ja) * | 1982-06-11 | 1984-01-10 | ア−ルシ−エ− コ−ポレ−ション | 撮像装置並びにその製造法 |
| US4547957A (en) * | 1982-06-11 | 1985-10-22 | Rca Corporation | Imaging device having improved high temperature performance |
| US4545114A (en) * | 1982-09-30 | 1985-10-08 | Fujitsu Limited | Method of producing semiconductor device |
| US4738936A (en) * | 1983-07-01 | 1988-04-19 | Acrian, Inc. | Method of fabrication lateral FET structure having a substrate to source contact |
| GB2151844A (en) * | 1983-12-20 | 1985-07-24 | Philips Electronic Associated | Semiconductor devices |
| NL8400297A (nl) * | 1984-02-01 | 1985-09-02 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenbundel. |
| JP2861340B2 (ja) * | 1990-09-07 | 1999-02-24 | ソニー株式会社 | 半導体装置 |
| JP4009106B2 (ja) * | 2001-12-27 | 2007-11-14 | 浜松ホトニクス株式会社 | 半導体受光素子、及びその製造方法 |
| JP4109159B2 (ja) * | 2003-06-13 | 2008-07-02 | 浜松ホトニクス株式会社 | 半導体受光素子 |
| US8482090B2 (en) * | 2010-07-15 | 2013-07-09 | Exelis, Inc. | Charged particle collector for a CMOS imager |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB692337A (en) * | 1951-10-24 | 1953-06-03 | Standard Telephones Cables Ltd | Improvements in or relating to electron beam tube arrangements |
| US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
| US3385729A (en) * | 1964-10-26 | 1968-05-28 | North American Rockwell | Composite dual dielectric for isolation in integrated circuits and method of making |
| US3491434A (en) * | 1965-01-28 | 1970-01-27 | Texas Instruments Inc | Junction isolation diffusion |
| US3534234A (en) * | 1966-12-15 | 1970-10-13 | Texas Instruments Inc | Modified planar process for making semiconductor devices having ultrafine mesa type geometry |
| US3593067A (en) * | 1967-08-07 | 1971-07-13 | Honeywell Inc | Semiconductor radiation sensor |
| US3532539A (en) * | 1968-11-04 | 1970-10-06 | Hitachi Ltd | Method for treating the surface of semiconductor devices |
| NL6816451A (ko) * | 1968-11-19 | 1970-05-21 |
-
1970
- 1970-05-16 NL NL7007171A patent/NL7007171A/xx unknown
-
1971
- 1971-05-06 US US00140734A patent/US3737701A/en not_active Expired - Lifetime
- 1971-05-11 DE DE19712123149 patent/DE2123149A1/de not_active Withdrawn
- 1971-05-13 GB GB1469571*[A patent/GB1350696A/en not_active Expired
- 1971-05-13 JP JP46031643A patent/JPS5245167B1/ja active Pending
- 1971-05-17 FR FR7117764A patent/FR2091691A5/fr not_active Expired
-
1975
- 1975-01-30 US US545620*A patent/US3916509A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB1350696A (en) | 1974-04-18 |
| DE2123149A1 (de) | 1971-12-09 |
| FR2091691A5 (ko) | 1972-01-14 |
| JPS466558A (ko) | 1971-12-11 |
| US3916509A (en) | 1975-11-04 |
| US3737701A (en) | 1973-06-05 |
| JPS5245167B1 (ko) | 1977-11-14 |