KR910019269A - 반도체 수광소자 - Google Patents

반도체 수광소자 Download PDF

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Publication number
KR910019269A
KR910019269A KR1019910005702A KR910005702A KR910019269A KR 910019269 A KR910019269 A KR 910019269A KR 1019910005702 A KR1019910005702 A KR 1019910005702A KR 910005702 A KR910005702 A KR 910005702A KR 910019269 A KR910019269 A KR 910019269A
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KR
South Korea
Prior art keywords
semiconductor layer
semiconductor
light receiving
receiving element
semiconductor light
Prior art date
Application number
KR1019910005702A
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English (en)
Other versions
KR940011103B1 (ko
Inventor
하루히코 오카자키
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
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Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910019269A publication Critical patent/KR910019269A/ko
Application granted granted Critical
Publication of KR940011103B1 publication Critical patent/KR940011103B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

내용 없음

Description

반도체 수광소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 따른 반도체 수광소자의 실시예의 단면도.

Claims (1)

  1. 증배층인 1 도전형의 제 1 반도체층(25,55)과, 이 제 1 반도체층의 주면상에 직접 또는 중간층(57)을 매개하여 형성되는 윈도우층인 1도 전형의 제 2 반도체층(26,46,56), 이 제 2 반도체층의 주표면으로부터 제 1 반도체층을 향하여 구부러진 @부(36), 이@부의 표면으로 부터 불순물을 도우프하여 형성되고 또한 제 1 반도체층에 도달하는 반대도전형의 제 3 반도체층(27), 1도 전형의 제 1 및 제 2 반도체층과 반대도전형의 제 3 반도체층에 의해 형성되는 PN접합(35)의 곡률을 갖는 부분을 포함하는 반대도전형의 가이드 링(28)을 구비하여 구성된 것을 특징으로 하는 반도체 수광소자.
    ※ 참고사항 : 최초출원내용에 의하여 공개하는 것임.
KR1019910005702A 1990-04-11 1991-04-10 반도체 수광소자 KR940011103B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-95470 1990-04-11
JP2095470A JP2970815B2 (ja) 1990-04-11 1990-04-11 半導体受光素子

Publications (2)

Publication Number Publication Date
KR910019269A true KR910019269A (ko) 1991-11-30
KR940011103B1 KR940011103B1 (ko) 1994-11-23

Family

ID=14138534

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910005702A KR940011103B1 (ko) 1990-04-11 1991-04-10 반도체 수광소자

Country Status (5)

Country Link
US (1) US5157473A (ko)
EP (1) EP0451852B1 (ko)
JP (1) JP2970815B2 (ko)
KR (1) KR940011103B1 (ko)
DE (1) DE69127574T2 (ko)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8817886D0 (en) * 1988-07-27 1988-09-01 British Telecomm Avalanche photodiode structure
US5365087A (en) * 1992-07-15 1994-11-15 Sumitomo Electric Industries, Ltd. Photodetector and opto-electronic integrated circuit with guard ring
JPH06314813A (ja) * 1993-03-04 1994-11-08 Sumitomo Electric Ind Ltd ｐｉｎ型受光素子、その製造方法及び光電子集積回路
US5610416A (en) * 1995-02-16 1997-03-11 Hewlett-Packard Company Avalanche photodiode with epitaxially regrown guard rings
JP3826366B2 (ja) * 1996-02-22 2006-09-27 モレックス インコーポレーテッド 電気コネクタ
JP3016371B2 (ja) * 1997-03-26 2000-03-06 日本電気株式会社 光検出器の製造方法
US5866936A (en) * 1997-04-01 1999-02-02 Hewlett-Packard Company Mesa-structure avalanche photodiode having a buried epitaxial junction
US5757057A (en) * 1997-06-25 1998-05-26 Advanced Photonix, Inc. Large area avalanche photodiode array
US5831322A (en) * 1997-06-25 1998-11-03 Advanced Photonix, Inc. Active large area avalanche photodiode array
US6730979B2 (en) * 2002-09-12 2004-05-04 The Boeing Company Recessed p-type region cap layer avalanche photodiode
KR100532281B1 (ko) * 2003-05-26 2005-11-29 삼성전자주식회사 면굴절 입사형 수광소자 및 그 제조방법
US20060121683A1 (en) * 2004-12-08 2006-06-08 Finisar Corporation Point source diffusion for avalanche photodiodes
US7233051B2 (en) * 2005-06-28 2007-06-19 Intel Corporation Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
US7741657B2 (en) * 2006-07-17 2010-06-22 Intel Corporation Inverted planar avalanche photodiode
US7683397B2 (en) * 2006-07-20 2010-03-23 Intel Corporation Semi-planar avalanche photodiode
US8008688B2 (en) * 2008-04-01 2011-08-30 Jds Uniphase Corporation Photodiode and method of fabrication
US8198650B2 (en) * 2008-12-08 2012-06-12 General Electric Company Semiconductor devices and systems
US7968963B2 (en) * 2009-04-08 2011-06-28 Sumitomo Electric Industries, Ltd. Photodiode array and image pickup device using the same
TWI438917B (zh) * 2009-11-12 2014-05-21 Maxchip Electronics Corp 結合紅外線感測之環境光源感測器及其製造方法
US9136301B2 (en) 2009-11-12 2015-09-15 Maxchip Electronics Corp. Multi-wave band light sensor combined with function of IR sensing and method of fabricating the same
US20110304758A1 (en) * 2010-06-12 2011-12-15 Munir Eldesouki High speed imaging through in-pixel storage
US9052497B2 (en) 2011-03-10 2015-06-09 King Abdulaziz City For Science And Technology Computing imaging data using intensity correlation interferometry
US9099214B2 (en) 2011-04-19 2015-08-04 King Abdulaziz City For Science And Technology Controlling microparticles through a light field having controllable intensity and periodicity of maxima thereof
JP2016122716A (ja) * 2014-12-24 2016-07-07 株式会社東芝 光検出装置およびこの光検出装置を備えたｃｔ装置
KR102017125B1 (ko) * 2018-03-28 2019-09-03 주식회사 포셈 포토다이오드의 제조방법
CN111653637A (zh) * 2020-03-26 2020-09-11 厦门市三安集成电路有限公司 一种宽光谱响应的雪崩光电二极管及其制作方法
CN112968071B (zh) * 2021-04-15 2022-09-06 长春工业大学 一种雪崩二极管及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572084A (en) * 1978-11-27 1980-05-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor photo-detector
US4556494A (en) * 1980-12-04 1985-12-03 Kamyr Aktiebolag Method of diffusion washing or thickening of pulp
CA1228661A (en) * 1984-04-10 1987-10-27 Rca Inc. Avalanche photodetector
CA1228663A (en) * 1984-04-10 1987-10-27 Paul P. Webb Photodetector with isolated avalanche region
JPS611064A (ja) * 1984-05-31 1986-01-07 Fujitsu Ltd 半導体受光装置
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd ＩｎＰ系化合物半導体装置
JPS61156777A (ja) * 1984-12-28 1986-07-16 Fujitsu Ltd 半導体受光素子
JPS61191082A (ja) * 1985-02-20 1986-08-25 Fujitsu Ltd 半導体受光素子
JPS61256771A (ja) * 1985-05-10 1986-11-14 Fujitsu Ltd 半導体受光装置の製造方法
JPS6233482A (ja) * 1985-08-07 1987-02-13 Mitsubishi Electric Corp アバランシエホトダイオ−ド
JPS6248079A (ja) * 1985-08-28 1987-03-02 Fujitsu Ltd 半導体受光素子
JPH07118548B2 (ja) * 1986-04-28 1995-12-18 住友電気工業株式会社 ▲ｉｉｉ▼−ｖ族多元化合物半導体ｐｉｎフオトダイオ−ド
JPS63128679A (ja) * 1986-11-18 1988-06-01 Fujitsu Ltd 半導体受光装置
US5053837A (en) * 1987-09-16 1991-10-01 Sumitomo Electric Industries, Ltd. Ingaas/inp type pin photodiodes
JPH01296676A (ja) * 1988-05-24 1989-11-30 Nec Corp 半導体受光装置
JPH02159775A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 半導体受光素子及びその製造方法

Also Published As

Publication number Publication date
EP0451852A1 (en) 1991-10-16
US5157473A (en) 1992-10-20
DE69127574T2 (de) 1998-02-19
EP0451852B1 (en) 1997-09-10
KR940011103B1 (ko) 1994-11-23
DE69127574D1 (de) 1997-10-16
JP2970815B2 (ja) 1999-11-02
JPH03293780A (ja) 1991-12-25

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