KR970018753A - 수광소자 - Google Patents

수광소자 Download PDF

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Publication number
KR970018753A
KR970018753A KR1019960043415A KR19960043415A KR970018753A KR 970018753 A KR970018753 A KR 970018753A KR 1019960043415 A KR1019960043415 A KR 1019960043415A KR 19960043415 A KR19960043415 A KR 19960043415A KR 970018753 A KR970018753 A KR 970018753A
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KR
South Korea
Prior art keywords
conductivity type
semiconductor substrate
light receiving
conductive semiconductor
region
Prior art date
Application number
KR1019960043415A
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English (en)
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KR100253770B1 (ko
Inventor
나오키 후쿠나가
마사루 구보
Original Assignee
쯔지 하루오
샤프 가부시끼가이샤
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Publication of KR970018753A publication Critical patent/KR970018753A/ko
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Publication of KR100253770B1 publication Critical patent/KR100253770B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

본 발명의 수광소자는 : 제1 도전형의 반도체기판; 상기 제1 도전형의 반도체기판의 표면의 소정영역에 형성된 제2 도전형의 제1 반도체층; 및 상기 제2 도전형의 제1 반도체층의 상부면에서 상기 제1 도전형의 반도체기판의 표면으로 연장하도록 형성되어, 상기 제2 도전형의 제1 반도체층을 제2 도전형의 다수의 반도체 영역들로 분할하는 적어도 하나의 제1 도전형의 반도체영역을 포함한다. 상기 수광소자에서, 제1 도전형의 반도체기판의 비저항이, 역바이어스의 인가에 따라 제1 도전형의 반도체기판에 형성될 공지층의 깊이 Xd와 상기 제1 도전형의 반도체영역의 제1 도전형의 반도체기판으로의 확산 깊이 Xj 사이에서 Xd≥Xj의 조건을 만족하도록 소정범위내로 설정된다.

Description

수광소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1 실시예의 수광소자의 구조를 나타낸 단면도.

Claims (8)

  1. 제1 도전형의 반도체기판; 상기 제1 도전형의 반도체기판의 표면의 소정영역에 형성된 제2 도전형의 제1 반도체층; 및 상기 제2 도전형의 제1 반도체층의 상부면에서 상기 제1 도전형의 반도체기판의 표면으로 연장하도록 형성되어, 상기 제2 도전형의 제1 반도체층을 제2 도전형의 다수의 반도체 영역들로 분할하는 적어도 하나의 제1 도전형의 반도체영역을 포함하고, 상기 제1 도전형의 반도체기판의 비저항이, 역바이어스의 인가에 따라 제1 도전형의 반도체기판에 형성될 공지층의 깊이 Xd와 상기 제1 도전형의 반도체영역의 상기 제1 도전형의 반도체기판으로서의 확산 깊이 Xj 사이에서 Xd≥Xj의 조건을 만족하도록 소정범위내로 설정되는 수광소자.
  2. 제1항에 있어서, 제2 도전형의 다수의 제2 반도체 영역들이 각각 상기 분할된 다수의 제2 도전형의 반도체영역들에 대응하도록 상기 제1 도전형의 반도체기판에 매립되는 수광소자.
  3. 제1항에 있어서, 상기 제1 도전형의 반도체기판의 표면상의 소정영역 이외의 영역에 소정회로소자가 형성되는 수광소자.
  4. 제2항에 있어서, 상기 제1 도전형의 반도체기판의 표면상의 소정영역 이외의 영역 소정 회로 소자가 형성되는 수광소자.
  5. 제3항에 있어서, 상기 분할된 다수의 제2 도전형의 반도체영역들 각각 및 상기 제2 도전형의 반도체영역하의 그 제2 도전형 반도체영역에 대응하는 제1 도전형의 반도체기판 영역에 의해 신호광을 검출하는 광검출 포토다이오드부가 형성되는 수광소자.
  6. 제1항에 있어서, 상기 제1 도전형의 반도체기판의 비저항이 30-1000Ω㎝의 범위내인 수광소자.
  7. 제1항에 있어서, 약 14㎒ 이상의 응답속도를 갖는 수광소자.
  8. 제1항에 있어서, 약 30㎒ 이상의 응답속도를 갖는 수광소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960043415A 1995-09-26 1996-09-25 수광소자 KR100253770B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP95-248142 1995-09-26
JP24814295 1995-09-26
JP8166284A JP2828244B2 (ja) 1995-09-26 1996-06-26 受光素子
JP96-166284 1996-06-26

Publications (2)

Publication Number Publication Date
KR970018753A true KR970018753A (ko) 1997-04-30
KR100253770B1 KR100253770B1 (ko) 2000-04-15

Family

ID=26490719

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960043415A KR100253770B1 (ko) 1995-09-26 1996-09-25 수광소자

Country Status (6)

Country Link
US (1) US6049117A (ko)
EP (1) EP0766323A3 (ko)
JP (1) JP2828244B2 (ko)
KR (1) KR100253770B1 (ko)
CN (1) CN1080938C (ko)
TW (1) TW399333B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100595802B1 (ko) * 1998-03-17 2006-07-03 소니 가부시끼 가이샤 수광 소자를 갖는 반도체 장치, 광학 픽업 장치, 및 수광 소자를갖는 반도체 장치의 제조 방법

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FR2998419B1 (fr) 2012-11-21 2015-01-16 St Microelectronics Rousset Protection d'un circuit integre contre des attaques
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JP2021027192A (ja) * 2019-08-06 2021-02-22 株式会社東芝 受光装置、受光装置の製造方法及び距離計測装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100595802B1 (ko) * 1998-03-17 2006-07-03 소니 가부시끼 가이샤 수광 소자를 갖는 반도체 장치, 광학 픽업 장치, 및 수광 소자를갖는 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
KR100253770B1 (ko) 2000-04-15
JPH09153605A (ja) 1997-06-10
EP0766323A2 (en) 1997-04-02
JP2828244B2 (ja) 1998-11-25
CN1151614A (zh) 1997-06-11
TW399333B (en) 2000-07-21
US6049117A (en) 2000-04-11
CN1080938C (zh) 2002-03-13
EP0766323A3 (en) 1998-07-29

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