KR870008395A - 절연게이트 전계효과 트랜지스터 - Google Patents

절연게이트 전계효과 트랜지스터 Download PDF

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KR870008395A
KR870008395A KR870001084A KR870001084A KR870008395A KR 870008395 A KR870008395 A KR 870008395A KR 870001084 A KR870001084 A KR 870001084A KR 870001084 A KR870001084 A KR 870001084A KR 870008395 A KR870008395 A KR 870008395A
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source
region
electrode layer
drain
field effect
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KR870001084A
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KR900003839B1 (ko
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마사노리 기누가사
후미나리 다나카
히로시 시게하라
가타 오타히로
Original Assignee
와타리 스기이치로
가부시키가이샤 도시바
야마모도 히로시
도시바 마이콤 엔지니어링 가부시키가이샤
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Publication of KR870008395A publication Critical patent/KR870008395A/ko
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Publication of KR900003839B1 publication Critical patent/KR900003839B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11898—Input and output buffer/driver structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

내용 없음

Description

절연게이트 전계효과 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 4 도는 본 발명의 일실시예에 따른 절연게이트 전계효과 트랜지스터의 패턴도,
제 5 도와 제 6 도는 제 4 도에 도시된 패턴의 개요도,
* 도면의 주요부분에 대한 부호의 설명
1 : 반도체기판 2 : 소오스영역
3 : 드레인영역 4 : 소오스전극층
5 : 드레인전극층 11 : 기판
12,12a,12b : 소오스영역 13,13a,13b : 드레인영역
14 : 소오스전극층 15 : 드레인전극층
16,16a,16d : 접촉홈 17 : 게이트전극층
18 : 신호선 19 : 접촉홈

Claims (7)

  1. 반도체기판과, 이 반도체기판의 표면에 매트릭스패턴으로 형성된 소오스영역과 드레인영역을 갖추고 있되, 상기 소오스영역에 인접된 4 면의 영역에 서로 다른 드레인영역을 형성시켜 줌과 더불어 상기 드레인영역에 인접된 4면의 영역에 서로 다른 소오스영역을 형성시켜 주어 상기 드레인영역의 행과 열을 구성하는 어레이를 형성시켜 주도록 상기 소오스영역과 드레인영역을 상호 교대로 배열시켜주는 한편, 상기 소오스영역에 접속되는 소오스전극층 및, 상기 드레인영역에 접속되는 드레인전극층을 구비하여 이루어진 절연게이트 전계효과트랜지스터에 있어서,
    상기 소오스전극층과 드레인전극층의 확장방향을 상호 교대로 배열된 소오스영역과 드레인영역의 행이나 열에 평행하도록 형성시켜 준 것을 특징으로 하는 절연게이트 전계효과 트랜지스터.
  2. 제 1 항에 있어서, 상기 소오스전극층과 드레인 전극층은 그 확장방향이 상기 소오스영역과 드레인영역의 행에 평행하도록 형성된 것을 특징으로 하는 절연게이트 전계효과 트랜지스터.
  3. 제 1 항에 있어서, 상기 소오스전극층과 드레인전극층은 그 확장방향이 상기 소오스영역과 드레인 영역의 열에 평행하도록 형성된 것을 특징으로 하는 절연게이트 전계효과 트랜지스터.
  4. 제 1 항에 있어서, 상기 소오스전극층과 드레인전극층은 그들 사이의 최소거리를 d라 하고, 최대거리를 d'라 하며, 그들의 패턴피치를 g라 할 경우 다음의 부등식
    를 만족하도록 된 것을 특징으로 하는 절연게이트 전계효과 트랜지스터.
  5. 제 1 항에 있어서, 상기 소오스전극층과 상기 드레인전극층에는 접촉홈을 덮도록 상기 소오스영역과 상기 드레인영역위까지 확장되 확장영역이 형성된 것을 특징으로 하는 절연게이트 전계효과 트랜지스터.
  6. 제 5 항에 있어서, 상기 확장영역은 급준한 구조로 형성된 것을 특징으로 하는 절연게이트 전계효과 트랜지스터.
  7. 제 5 항에 있어서, 상기 확장영역은 완만한 구조로 형성된 것을 특징으로 하는 절연게이트 전계효과 트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870001084A 1986-02-10 1987-02-10 절연게이트 전계효과 트랜지스터 KR900003839B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP27431 1986-02-10
JP61027431A JPH07112064B2 (ja) 1986-02-10 1986-02-10 絶縁ゲート電界効果型トランジスタ
JP61-27431 1986-02-10

Publications (2)

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KR870008395A true KR870008395A (ko) 1987-09-26
KR900003839B1 KR900003839B1 (ko) 1990-06-02

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Country Link
US (1) US4821084A (ko)
EP (1) EP0234276B1 (ko)
JP (1) JPH07112064B2 (ko)
KR (1) KR900003839B1 (ko)
DE (1) DE3782748T2 (ko)
GR (1) GR880300016T1 (ko)

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JPH07112067B2 (ja) * 1990-01-24 1995-11-29 株式会社東芝 半導体装置
US5412239A (en) * 1993-05-14 1995-05-02 Siliconix Incorporated Contact geometry for improved lateral MOSFET
US5355008A (en) * 1993-11-19 1994-10-11 Micrel, Inc. Diamond shaped gate mesh for cellular MOS transistor array
JP2800884B2 (ja) * 1995-10-27 1998-09-21 日本電気株式会社 横型ｄｓａパワーｍｏｓｆｅｔを備えた半導体装置
US6084266A (en) * 1998-03-02 2000-07-04 Vanguard International Semiconductor Corporation Layout of semiconductor devices to increase the packing density of a wafer
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JP4800017B2 (ja) * 2005-11-25 2011-10-26 エルピーダメモリ株式会社 半導体記憶装置
US20090072314A1 (en) 2007-09-19 2009-03-19 Texas Instruments Incorporated Depletion Mode Field Effect Transistor for ESD Protection
US8169081B1 (en) 2007-12-27 2012-05-01 Volterra Semiconductor Corporation Conductive routings in integrated circuits using under bump metallization
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
US9064947B2 (en) 2009-08-04 2015-06-23 Gan Systems Inc. Island matrixed gallium nitride microwave and power switching transistors
US9029866B2 (en) 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
JP2011159755A (ja) * 2010-01-29 2011-08-18 Sanyo Electric Co Ltd 半導体装置
EP2559064A4 (en) * 2010-04-13 2018-07-18 GaN Systems Inc. High density gallium nitride devices using island topology
US9553048B1 (en) * 2015-09-04 2017-01-24 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method of semiconductor device

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US4015278A (en) * 1974-11-26 1977-03-29 Fujitsu Ltd. Field effect semiconductor device
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JPS6053085A (ja) * 1983-09-02 1985-03-26 Hitachi Ltd 接合形電界効果トランジスタ
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Also Published As

Publication number Publication date
DE3782748T2 (de) 1993-05-13
DE3782748D1 (de) 1993-01-07
US4821084A (en) 1989-04-11
EP0234276B1 (en) 1992-11-25
EP0234276A2 (en) 1987-09-02
GR880300016T1 (en) 1988-10-18
JPH07112064B2 (ja) 1995-11-29
JPS62185373A (ja) 1987-08-13
EP0234276A3 (en) 1988-07-13
KR900003839B1 (ko) 1990-06-02

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