JP2007067012A - 半導体装置 - Google Patents
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- JP2007067012A JP2007067012A JP2005248269A JP2005248269A JP2007067012A JP 2007067012 A JP2007067012 A JP 2007067012A JP 2005248269 A JP2005248269 A JP 2005248269A JP 2005248269 A JP2005248269 A JP 2005248269A JP 2007067012 A JP2007067012 A JP 2007067012A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 206
- 238000002955 isolation Methods 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 230000007257 malfunction Effects 0.000 abstract description 14
- 230000006866 deterioration Effects 0.000 abstract description 6
- 238000012360 testing method Methods 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000002238 attenuated effect Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000000644 propagated effect Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】 半導体基板100内に形成された、抵抗率が10Ωcmよりも大きく1kΩcmよりも小さな第1層103と、半導体基板100内の表面側に、第1層103上方に位置するように形成された第2層105と、第2層105内又は第2層105上に形成された2つの半導体素子109と、2つの半導体素子109の間に位置し、半導体基板100の表面から第1層103に達するように半導体基板100内に形成され、2つの半導体素子109を電気的に分離するトレンチ型絶縁領域111とを備える。
【選択図】 図1
Description
MIKE GOLIO The RF AND MICROWAVE HANDBOOK CRC Press 2000 7-51 Figure 7.43 小坂大輔・永田 真(神戸大)・平岡幸生・今西郁夫・前田昌克(松下電器産業(株))・村坂佳隆・岩田 穆((株)エイアールテック CMOSミックストシグナル/RF回路における基板結合対策 集積回路研究会(ICD) 一般講演(実験)
図1は、第1の実施の形態に係る半導体装置の構成を示す断面図である。
とが原因である。このとき、シリコン基板は、抵抗率の高いものほど結晶欠陥を多く有するため、基板の高抵抗化はリーク電流増加の原因となる。従って、良好なアイソレーションを確保するために基板を高抵抗化した場合には、上記ΔVを規定する基板抵抗及びリー
ク電流の両方の値が増大するので、ラッチアップが起こり易くなり、回路誤動作が起こり易くなる。
ところで、回路誤動作の原因の一つにラッチアップ
図5は、第2の実施の形態に係る半導体装置の構成を示す断面図である。
図6(a)は、第3の実施の形態に係る半導体装置の平面図であり、図6(b)は、同半導体装置の断面図(図6(a)のA−A’線における断面図)である。
図7(a)は、第4の実施の形態における半導体装置の平面図であり、図7(b)は、同半導体装置の断面図(図7(a)のA−A’線における断面図)である。
図8(a)は、第5の実施の形態における半導体装置の平面図であり、図8(b)は、同半導体装置の断面図(図8(a)のA−A’線における断面図)である。
次に、第1、第3及び第4の実施の形態における半導体装置の実験例を示す。
53 S2ポート
100 半導体基板
103 第1層
105 第2層
109、1204 半導体素子
111 トレンチ型絶縁領域
213 第1埋め込み層
215 第2埋め込み層
311 第1トレンチ型絶縁領域
321 第2トレンチ型絶縁領域
417 高抵抗領域
511 第3トレンチ型絶縁領域
521 第4トレンチ型絶縁領域
1000、1101、1200 シリコン基板
1001 ベース
1002 エミッタ
1003 コレクタ
1004、1203 トレンチ
1102 ウェル領域
1201 高抵抗層
1202 低抵抗層
Claims (8)
- 半導体基板内に形成された、抵抗率が10Ωcmよりも大きく1kΩcmよりも小さな第1層と、
前記半導体基板内の表面側に、前記第1層上方に位置するように形成された第2層と、
前記第2層内又は前記第2層上に形成された2つの半導体素子又は半導体回路と、
前記2つの半導体素子又は半導体回路の間に位置し、前記半導体基板の表面から前記第1層に達するように前記半導体基板内に形成され、前記2つの半導体素子又は半導体回路を電気的に分離する分離領域とを備える
ことを特徴とする半導体装置。 - 前記分離領域は、前記2つの半導体素子又は半導体回路の間に2つ形成される
ことを特徴とする請求項1に記載の半導体装置。 - 前記第2層内の前記2つの分離領域の間に形成された、抵抗率が前記第2層よりも大きな高抵抗領域をさらに備える
ことを特徴とする請求項2に記載の半導体装置。 - 前記第2層内の前記2つの分離領域の間に形成された、電位が固定され、かつ抵抗率が前記第2層よりも小さな低抵抗領域をさらに備える
ことを特徴とする請求項2又は3に記載の半導体装置。 - 前記2つの分離領域のうちの一方である第1分離領域は、1つの前記半導体素子又は半導体回路を取り囲むように形成され、
前記2つの分離領域のうちの他方である第2分離領域は、前記第1分離領域を取り囲むように形成される
ことを特徴とする請求項2に記載の半導体装置。 - 前記第2層と接するように前記第1層内に形成された、前記第1層と異なる導電型の埋め込み層をさらに備える
ことを特徴とする請求項1に記載の半導体装置。 - 前記第2層と接するように前記第1層内に形成された、抵抗率が前記第1層よりも小さな埋め込み領域をさらに備える
ことを特徴とする請求項1に記載の半導体装置。 - 前記半導体素子はデジタル回路素子である
ことを特徴とする請求項1〜7のいずれか1項に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005248269A JP2007067012A (ja) | 2005-08-29 | 2005-08-29 | 半導体装置 |
US11/465,151 US20070045768A1 (en) | 2005-08-29 | 2006-08-17 | Semiconductor device |
CN200610121913A CN100593856C (zh) | 2005-08-29 | 2006-08-28 | 半导体器件 |
US12/650,611 US20100102414A1 (en) | 2005-08-29 | 2009-12-31 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005248269A JP2007067012A (ja) | 2005-08-29 | 2005-08-29 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
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JP2007067012A true JP2007067012A (ja) | 2007-03-15 |
Family
ID=37802891
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Application Number | Title | Priority Date | Filing Date |
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JP2005248269A Pending JP2007067012A (ja) | 2005-08-29 | 2005-08-29 | 半導体装置 |
Country Status (3)
Country | Link |
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US (2) | US20070045768A1 (ja) |
JP (1) | JP2007067012A (ja) |
CN (1) | CN100593856C (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007103417A (ja) * | 2005-09-30 | 2007-04-19 | Asahi Kasei Microsystems Kk | 半導体装置及びその製造方法 |
WO2011086612A1 (ja) * | 2010-01-15 | 2011-07-21 | パナソニック株式会社 | 半導体装置 |
JP2013102071A (ja) * | 2011-11-09 | 2013-05-23 | Renesas Electronics Corp | 半導体装置 |
CN103208485A (zh) * | 2012-01-12 | 2013-07-17 | 株式会社东芝 | 具有基板贯通电极的半导体装置 |
WO2014132311A1 (ja) * | 2013-02-28 | 2014-09-04 | パナソニック株式会社 | 半導体装置 |
JP2016131254A (ja) * | 2006-05-31 | 2016-07-21 | アドバンスト・アナロジック・テクノロジーズ・インコーポレイテッドAdvanced Analogic Technologies Incorporated | 集積回路のための分離構造 |
Families Citing this family (6)
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---|---|---|---|---|
JP5131814B2 (ja) * | 2007-02-27 | 2013-01-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7923808B2 (en) | 2007-11-20 | 2011-04-12 | International Business Machines Corporation | Structure of very high insertion loss of the substrate noise decoupling |
EP2211381A1 (fr) * | 2009-01-23 | 2010-07-28 | STMicroelectronics (Tours) SAS | Caisson isolé à faible capacité parasite pour composants électroniques |
JP2010251522A (ja) * | 2009-04-15 | 2010-11-04 | Panasonic Corp | 半導体装置及びその製造方法 |
JP2010278258A (ja) * | 2009-05-28 | 2010-12-09 | Panasonic Corp | 高耐圧半導体装置及びそれを用いた電流制御装置 |
KR20220167549A (ko) | 2021-06-14 | 2022-12-21 | 삼성전자주식회사 | 웰 영역을 포함하는 반도체 장치 |
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2005
- 2005-08-29 JP JP2005248269A patent/JP2007067012A/ja active Pending
-
2006
- 2006-08-17 US US11/465,151 patent/US20070045768A1/en not_active Abandoned
- 2006-08-28 CN CN200610121913A patent/CN100593856C/zh not_active Expired - Fee Related
-
2009
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Also Published As
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CN1925157A (zh) | 2007-03-07 |
US20070045768A1 (en) | 2007-03-01 |
US20100102414A1 (en) | 2010-04-29 |
CN100593856C (zh) | 2010-03-10 |
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