KR950007059A - 집적 회로 - Google Patents

집적 회로 Download PDF

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KR950007059A
KR950007059A KR1019940018396A KR19940018396A KR950007059A KR 950007059 A KR950007059 A KR 950007059A KR 1019940018396 A KR1019940018396 A KR 1019940018396A KR 19940018396 A KR19940018396 A KR 19940018396A KR 950007059 A KR950007059 A KR 950007059A
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South Korea
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metal layer
bond pads
active element
substrate
integrated circuit
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KR1019940018396A
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KR0146013B1 (ko
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치티페디 사이리쉬
토마스 코크란 윌리엄
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리차드 디. 로먼
에이티 앤드 티 코포레이션
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Publication of KR950007059A publication Critical patent/KR950007059A/ko
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Publication of KR0146013B1 publication Critical patent/KR0146013B1/ko

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    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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  • Automation & Control Theory (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

능동 회로가 적어도 3개의 금속 레벨(211, 215,219)을 갖는 집적 회로내의 본드 패드(3) 아래에 위치된다. 본드 패드 근처의 금속 레벨(215)은 버퍼처럼 동작하고, 용납할 수 없는 큰 누설 전류를 유도하는 유전체(213)내의 크랙 전파를 방지한다.

Description

집적 회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 집적 회로의 일부분의 평면도.
제2도는 제1도에 도시된 본 발명에 따른 집적 회로의 일부분의 단면도.

Claims (7)

  1. 기판(201)과; 상기 기판(201)의 표면에 능동소자(203)와; 상기 능동소자(203)의 일부분 위에 실질적으로 존재하는 복수의 본드 패드(3)와; 상기 본드 패드(3)와 상기 기판(201)사이의 복수의 패턴화된 금속층(215)으로서, 적어도 상기 금속층(215)이 상기 능동 소자(203)중 적어도 하나위에 실질적으로 존재하는 상기 금속층(215)과; 상기 패턴화된 금속층(215)들을 서로간에 분리시키고 그리고 상기 금속층(215)들을 상기 본드 패드(3)로부터 또한 상기 능동소자(203)로부터 분리시키는 유전체물질(214, 213, 217) 및 ; 상기 본드 패드(3)로부터 상기 능동 소자(203)까지의 전기적인 연결(251, 255, 215)을 포함하는 것을 특징으로 하는 집적 회로.
  2. 제1항에 있어서, 상기 패턴화된 금속층(215)중 상기 적어도 하나가 상기 본드 패드(3)중 적어도 하나에 전기적으로 연결되는 것을 특징으로 하는 집적 회로.
  3. 제2항에 있어서, 상기 패턴화된 금속층(215)중 상기 적어도 하나가 상기 본드 패드(3)의 적어도 하나 아래에서 상기 능동 회로의 적어도 한 소자(203)에 전기적으로 연결되는 것을 특징으로 하는 집적 회로.
  4. 제1항에 있어서, 세개의 금속 레벨(211, 215, 219)을 갖는 것을 특징으로 하는 집적 회로.
  5. 제1항에 있어서, 적어도 4개의 금속 레벨(211, 215, 219)을 갖는 것을 특징으로 하는 집적 회로.
  6. 기판(201)과; 상기 기판(201)의 표면에 형성된 능동 소자(203)와; 복수의 본드 패드(3)로서, 상기 본드 패드(3)중 적어도 하나가 상기 능동소자(203)중 적어도 하나위에 실질적으로 존재하는 상기 본드 패드(3)와; 상기 복수의 본드 패드(3)와 상기 기판(201) 사이에 패턴화된 금속층(215)으로서, 상기 금속층(215)의 적어도 일부분이 상기 능동소자(201)의 적어도 일부분 위에 실질적으로 존재하는 상기 금속층(215)과; 상기 패턴화된 금속층(215) 패드(3)로부터 상기 능동 소자 (203)까지의 전기적인 연결(251, 255, 215)을 포함하는 것을 특징으로 하는 집적회로.
  7. 제6항에 있어서, 상기 패턴화된 금속층(215)과 상기 능동소자(203)사이에 금속층(211)을 포함하고, 상기 금속층(211)은 유전체 물질(213)에 의해 상기 능동 소자(203) 및 상기 패턴화된 금속층(215)으로 분리되는 것을 특징으로 하는 집적 회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940018396A 1993-08-05 1994-07-28 집적 회로 KR0146013B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10243493A 1993-08-05 1993-08-05
US102,434 1993-08-05

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KR950007059A true KR950007059A (ko) 1995-03-21
KR0146013B1 KR0146013B1 (ko) 1998-11-02

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EP (1) EP0637840A1 (ko)
JP (1) JPH07153922A (ko)
KR (1) KR0146013B1 (ko)

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EP0923126A1 (en) * 1997-12-05 1999-06-16 STMicroelectronics S.r.l. Integrated electronic device comprising a mechanical stress protection structure
KR100267105B1 (ko) * 1997-12-09 2000-11-01 윤종용 다층패드를구비한반도체소자및그제조방법
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