KR870010628A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR870010628A KR870010628A KR860009327A KR860009327A KR870010628A KR 870010628 A KR870010628 A KR 870010628A KR 860009327 A KR860009327 A KR 860009327A KR 860009327 A KR860009327 A KR 860009327A KR 870010628 A KR870010628 A KR 870010628A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor chip
- switching
- semiconductor devices
- external signal
- bonding pads
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 239000000919 ceramic Substances 0.000 description 2
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Wire Bonding (AREA)
- Dram (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 실시예인 반도체장치의 구조를 표시한 부분 평면도
제 2 도는 종래의 세라믹 패키지용과 플래스틱 패키지용의 2개의 동일 외부 신호용 본딩패드를 설치한 반도체장치의 구조를 표시한 평면도
제 3 도는 제 2 도의 반도체장치를 세라믹 패키지에 어셈브리한 경우의 구조를 표시한 부분평면도
Claims (1)
1개의 반도체 칩상에 당해 반도체 칩의 동일 내부회로에 접속되는 적어도 2개의 동일외부 신호용 본딩패드를 설치한 반도체 장치에 있어서 전기 반도체 칩상에 설치되어 전기 각 동일 외부 신호용 본딩패드의 접속경로계를 전기 내부회로에 선택적으로 접속하는 스위치수단과 전기 반도체 칩상에 설치되어 전기 스위치수단의 선택상버를 결정하기 위한 신호를 입력하는 스위치 전환용 본딩패드와를 구비하는 것을 특징으로한 반도체장치.
※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP88716 | 1986-04-17 | ||
JP61-88716 | 1986-04-17 | ||
JP61088716A JP2605687B2 (ja) | 1986-04-17 | 1986-04-17 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870010628A true KR870010628A (ko) | 1987-11-30 |
KR910000114B1 KR910000114B1 (ko) | 1991-01-21 |
Family
ID=13950623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860009327A KR910000114B1 (ko) | 1986-04-07 | 1986-11-05 | 반도체 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4808844A (ko) |
JP (1) | JP2605687B2 (ko) |
KR (1) | KR910000114B1 (ko) |
DE (1) | DE3712178A1 (ko) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR900001398B1 (ko) * | 1987-11-30 | 1990-03-09 | 삼성전자 주식회사 | 양방성 입출력 셀 |
KR910003593B1 (ko) * | 1987-12-30 | 1991-06-07 | 삼성전자 주식회사 | 고집적도 메모리용 모드 선택회로 |
JPH01280923A (ja) * | 1988-05-07 | 1989-11-13 | Mitsubishi Electric Corp | 半導体集積回路装置 |
US4987325A (en) * | 1988-07-13 | 1991-01-22 | Samsung Electronics Co., Ltd. | Mode selecting circuit for semiconductor memory device |
US4866309A (en) * | 1988-07-18 | 1989-09-12 | Western Digital Corporation | Multiplexed bus architecture for configuration sensing |
US6304987B1 (en) * | 1995-06-07 | 2001-10-16 | Texas Instruments Incorporated | Integrated test circuit |
US4987319A (en) * | 1988-09-08 | 1991-01-22 | Kawasaki Steel Corporation | Programmable input/output circuit and programmable logic device |
JP2560805B2 (ja) * | 1988-10-06 | 1996-12-04 | 三菱電機株式会社 | 半導体装置 |
US5161124A (en) * | 1988-10-27 | 1992-11-03 | Texas Instruments Incorporated | Bond programmable integrated circuit |
US4912348A (en) * | 1988-12-09 | 1990-03-27 | Idaho Research Foundation | Method for designing pass transistor asynchronous sequential circuits |
JP3005250B2 (ja) * | 1989-06-30 | 2000-01-31 | テキサス インスツルメンツ インコーポレイテツド | バスモニター集積回路 |
JP2531827B2 (ja) * | 1990-04-25 | 1996-09-04 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2925337B2 (ja) * | 1990-12-27 | 1999-07-28 | 株式会社東芝 | 半導体装置 |
US5353250A (en) * | 1991-12-09 | 1994-10-04 | Texas Instruments Inc. | Pin programmable dram that provides customer option programmability |
JP2727921B2 (ja) * | 1993-08-13 | 1998-03-18 | 日本電気株式会社 | 半導体集積回路装置 |
US5557219A (en) * | 1994-01-31 | 1996-09-17 | Texas Instruments Incorporated | Interface level programmability |
US5969538A (en) | 1996-10-31 | 1999-10-19 | Texas Instruments Incorporated | Semiconductor wafer with interconnect between dies for testing and a process of testing |
US5760643A (en) * | 1995-10-31 | 1998-06-02 | Texas Instruments Incorporated | Integrated circuit die with selective pad-to-pad bypass of internal circuitry |
DE19638175C2 (de) | 1996-09-18 | 2000-05-25 | Siemens Ag | Integrierte Schaltung (Chip) mit einem diese in sich aufnehmenden Gehäuse und externer Konfigurationsmöglichkeit |
US6405335B1 (en) | 1998-02-25 | 2002-06-11 | Texas Instruments Incorporated | Position independent testing of circuits |
US7058862B2 (en) * | 2000-05-26 | 2006-06-06 | Texas Instruments Incorporated | Selecting different 1149.1 TAP domains from update-IR state |
JP3334671B2 (ja) * | 1999-04-16 | 2002-10-15 | 日本電気株式会社 | 半導体装置及びこれを搭載したモジュール |
US6731071B2 (en) * | 1999-06-21 | 2004-05-04 | Access Business Group International Llc | Inductively powered lamp assembly |
US6728915B2 (en) | 2000-01-10 | 2004-04-27 | Texas Instruments Incorporated | IC with shared scan cells selectively connected in scan path |
US6769080B2 (en) | 2000-03-09 | 2004-07-27 | Texas Instruments Incorporated | Scan circuit low power adapter with counter |
JP4313544B2 (ja) * | 2002-05-15 | 2009-08-12 | 富士通マイクロエレクトロニクス株式会社 | 半導体集積回路 |
US7131033B1 (en) | 2002-06-21 | 2006-10-31 | Cypress Semiconductor Corp. | Substrate configurable JTAG ID scheme |
US7818640B1 (en) | 2004-10-22 | 2010-10-19 | Cypress Semiconductor Corporation | Test system having a master/slave JTAG controller |
US20060086940A1 (en) * | 2004-10-26 | 2006-04-27 | Jim Wang | Package structure of multi-chips light-emitting module |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56157056A (en) * | 1980-05-09 | 1981-12-04 | Fujitsu Ltd | Manufacture of read-only memory |
US4386284A (en) * | 1981-02-06 | 1983-05-31 | Rca Corporation | Pulse generating circuit using current source |
DE3120163A1 (de) * | 1981-05-21 | 1982-12-09 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Cmos-auswahlschaltung |
JPS5835963A (ja) * | 1981-08-28 | 1983-03-02 | Fujitsu Ltd | 集積回路装置 |
DE3218992A1 (de) * | 1982-05-19 | 1983-11-24 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierter schaltkreis |
JPS6188538A (ja) * | 1984-10-05 | 1986-05-06 | Fujitsu Ltd | 半導体装置 |
US4638181A (en) * | 1984-11-29 | 1987-01-20 | Rca Corporation | Signal source selector |
JPS6251231A (ja) * | 1985-08-30 | 1987-03-05 | Fujitsu Ltd | 半導体集積回路装置 |
JPH0831789B2 (ja) * | 1985-09-04 | 1996-03-27 | 沖電気工業株式会社 | 出力回路 |
-
1986
- 1986-04-17 JP JP61088716A patent/JP2605687B2/ja not_active Expired - Lifetime
- 1986-11-05 KR KR1019860009327A patent/KR910000114B1/ko not_active IP Right Cessation
-
1987
- 1987-04-01 US US07/032,624 patent/US4808844A/en not_active Expired - Lifetime
- 1987-04-10 DE DE19873712178 patent/DE3712178A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
KR910000114B1 (ko) | 1991-01-21 |
DE3712178A1 (de) | 1987-10-22 |
US4808844A (en) | 1989-02-28 |
DE3712178C2 (ko) | 1992-08-27 |
JPS62244144A (ja) | 1987-10-24 |
JP2605687B2 (ja) | 1997-04-30 |
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Payment date: 20060110 Year of fee payment: 16 |
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