KR900013654A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR900013654A
KR900013654A KR1019900002683A KR900002683A KR900013654A KR 900013654 A KR900013654 A KR 900013654A KR 1019900002683 A KR1019900002683 A KR 1019900002683A KR 900002683 A KR900002683 A KR 900002683A KR 900013654 A KR900013654 A KR 900013654A
Authority
KR
South Korea
Prior art keywords
mis
type
semiconductor devices
capacitor
opposite
Prior art date
Application number
KR1019900002683A
Other languages
English (en)
Other versions
KR930006143B1 (ko
Inventor
겐 후루야마
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR900013654A publication Critical patent/KR900013654A/ko
Application granted granted Critical
Publication of KR930006143B1 publication Critical patent/KR930006143B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0676—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type comprising combinations of diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 MIS형 콘덴서를 포함한 반도체장치의 단면도.
제2도는 그 평면도.
제3도는 제1실시예에 따른 반도체장치의 등가회로도.

Claims (1)

  1. 제1도전형의 반도체기판(3)중에 형성된 제1영역(7)을 한쪽의 전극으로 갖춘(MIS)형 콘덴서(C)와, 이 MIS형 콘덴서(C)의 양단간에 서로 반대극성으로 직렬접속된 최소한 1쌍의 다이오드(D1,D2)를 구비하여 구성되고, 그 중 1개의 다이오드가 상기 반도체기판(3)중에 형성된 반대도전형의 웰영역(12)과 이 반대 도전형의 웰영역(12)내에 형성된 제1도전형의 제2,제3영역(9,11) 및 상기 MIS형 콘덴서(C)의 양단을 상기 제2, 제3영역(9,11)에 각각 접속시키는 배선수단(W1,W2)을 포함하고 있는 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900002683A 1989-02-28 1990-02-28 반도체장치 KR930006143B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1047221A JP2786652B2 (ja) 1989-02-28 1989-02-28 半導体装置
JP1-47221 1989-02-28

Publications (2)

Publication Number Publication Date
KR900013654A true KR900013654A (ko) 1990-09-06
KR930006143B1 KR930006143B1 (ko) 1993-07-07

Family

ID=12769129

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900002683A KR930006143B1 (ko) 1989-02-28 1990-02-28 반도체장치

Country Status (5)

Country Link
US (1) US5089875A (ko)
EP (1) EP0385450B1 (ko)
JP (1) JP2786652B2 (ko)
KR (1) KR930006143B1 (ko)
DE (1) DE69033960T2 (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5706163A (en) * 1995-11-28 1998-01-06 California Micro Devices Corporation ESD-protected thin film capacitor structures
KR970053932A (ko) * 1995-12-08 1997-07-31 김광호 트랜지스터의 래치 전압을 이용한 정전 내력 향상 모스 축전기
US5892262A (en) * 1996-06-03 1999-04-06 Winbond Electronics Corp. Capacitor-triggered electrostatic discharge protection circuit
US6417556B1 (en) * 2000-02-02 2002-07-09 Advanced Micro Devices, Inc. High K dielectric de-coupling capacitor embedded in backend interconnect
US6838367B1 (en) 2000-08-24 2005-01-04 Micron Technology, Inc. Method for simultaneous formation of fuse and capacitor plate and resulting structure
JP3873679B2 (ja) * 2001-07-23 2007-01-24 セイコーエプソン株式会社 半導体容量装置、昇圧回路および不揮発性半導体記憶装置
JP2006100308A (ja) * 2004-09-28 2006-04-13 Sanyo Electric Co Ltd 半導体装置、全波整流回路、半波整流回路
JP4986404B2 (ja) * 2005-03-17 2012-07-25 三菱電機株式会社 半導体装置
US7420793B2 (en) * 2006-01-12 2008-09-02 Taiwan Semiconductor Manufacturing Co., Ltd. Circuit system for protecting thin dielectric devices from ESD induced damages
JP2009245503A (ja) * 2008-03-31 2009-10-22 Nec Electronics Corp 半導体記憶装置
WO2015025753A1 (ja) * 2013-08-19 2015-02-26 株式会社村田製作所 Ｅｓｄ保護機能付薄膜キャパシタ装置およびその製造方法
DE102014008990B4 (de) 2014-06-13 2016-11-10 Dietmar Dreyer Halbleiterverstärker zur Speicherung von elektrischer Energie auf der Basis eines generierten Schwingkreises
US11351048B2 (en) 2015-11-16 2022-06-07 Boston Scientific Scimed, Inc. Stent delivery systems with a reinforced deployment sheath

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
JPS5821374A (ja) * 1981-07-29 1983-02-08 Toshiba Corp 半導体装置
JPS5825264A (ja) * 1981-08-07 1983-02-15 Hitachi Ltd 絶縁ゲート型半導体装置
JPS60144972A (ja) * 1984-01-06 1985-07-31 Toshiba Corp 半導体装置
JPS60229359A (ja) * 1984-04-27 1985-11-14 Matsushita Electric Ind Co Ltd 高周波半導体装置
US4651178A (en) * 1985-05-31 1987-03-17 Rca Corporation Dual inverse zener diode with buried junctions
JPS6218938U (ko) * 1985-07-18 1987-02-04
JPS62154661A (ja) * 1985-12-26 1987-07-09 Toshiba Corp 半導体装置
US4758873A (en) * 1986-05-16 1988-07-19 National Semiconductor Corporation Balanced MOS capacitor with low stray capacitance and high ESD survival

Also Published As

Publication number Publication date
JP2786652B2 (ja) 1998-08-13
EP0385450A3 (en) 1991-07-17
DE69033960T2 (de) 2002-11-07
EP0385450B1 (en) 2002-05-08
KR930006143B1 (ko) 1993-07-07
DE69033960D1 (de) 2002-06-13
JPH02226757A (ja) 1990-09-10
US5089875A (en) 1992-02-18
EP0385450A2 (en) 1990-09-05

Similar Documents

Publication Publication Date Title
KR880004580A (ko) 전력 mosfet와 제어회로가 통합된 반도체소자
KR940010352A (ko) 반도체기억장치
KR860002153A (ko) 반도체 장치
KR900013654A (ko) 반도체 장치
KR850002670A (ko) 마스터 슬라이스 반도체 장치
KR850000803A (ko) 반도체 장치
KR910019235A (ko) 반도체기억장치
KR890016679A (ko) 반도체장치
KR910007129A (ko) 입력보호회로를 구비한 반도체장치
KR950028013A (ko) 보호회로를 내장한 절연게이트형 반도체장치
KR880006782A (ko) 접합 파괴방지 반도체장치
KR900019259A (ko) 쌍방향제어정류 반도체장치
KR930003416A (ko) 저용량 2중 확산형 전계효과 트랜지스터
KR900701044A (ko) 반도체 장치
KR950020965A (ko) 반도체 장치
KR900004040A (ko) 반도체 집적회로 디바이스
KR910017656A (ko) 반도체장치
KR850000805A (ko) 받도체장치
KR960009209A (ko) 반도체 집적회로
KR950015829A (ko) 전계효과에 의해 제어가능한 반도체 소자
KR930011296A (ko) 전계효과형 트랜지스터
KR910008853A (ko) 반도체장치와 그 제조방법
KR920018932A (ko) 반도체장치
KR910015041A (ko) 두개의 에미터 단자를 갖는 고주파수 smd 트랜지스터
KR890013790A (ko) 반도체 장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060630

Year of fee payment: 14

LAPS Lapse due to unpaid annual fee