KR880006782A - 접합 파괴방지 반도체장치 - Google Patents

접합 파괴방지 반도체장치 Download PDF

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Publication number
KR880006782A
KR880006782A KR860009799A KR860009799A KR880006782A KR 880006782 A KR880006782 A KR 880006782A KR 860009799 A KR860009799 A KR 860009799A KR 860009799 A KR860009799 A KR 860009799A KR 880006782 A KR880006782 A KR 880006782A
Authority
KR
South Korea
Prior art keywords
semiconductor device
semiconductor region
semiconductor
junction breakdown
breakdown prevention
Prior art date
Application number
KR860009799A
Other languages
English (en)
Other versions
KR900008746B1 (ko
Inventor
전동수
Original Assignee
강진구
삼성반도체통신 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 강진구, 삼성반도체통신 주식회사 filed Critical 강진구
Priority to KR1019860009799A priority Critical patent/KR900008746B1/ko
Priority to DE3737450A priority patent/DE3737450C2/de
Priority to US07/121,843 priority patent/US4920445A/en
Priority to FR8715955A priority patent/FR2606935B1/fr
Priority to GB8727134A priority patent/GB2199185B/en
Priority to JP62290775A priority patent/JPH01125862A/ja
Publication of KR880006782A publication Critical patent/KR880006782A/ko
Application granted granted Critical
Publication of KR900008746B1 publication Critical patent/KR900008746B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음

Description

접합 파괴방지 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 반도체장치의 입력패드 부분의 평면도.
제2도는 제1도의 선 X-X' 에서 전달한 단면도.
제3도는 부우스트 제어레이터의 회로도.

Claims (2)

  1. 제 1 도전형의 반도체 기판상에 얕은 접합 깊이를 가는 반도체장치에 있어서, 고전압이 인가되는 금속 도체층라인과, 상기 금속도체층라인과 절연층의 개구를통해 접속이 되는 상기 제1도전형과 반대 도전형의 고농도의 제2반도체 영역과, 상기 제2반도체영역 표면상의 상기 오움익 접속이 되는 개구하부에 상기 제2반도체 영역과 동일 도전형이며 접합 깊이가 보다 깊게 형성된 제1반도체 영역으로 구성함을 특징으로 하는 접합 파괴방지 반도체장치.
  2. 제1항에 있어서 제1반도체 영역이 씨모오스 트랜지스터의 웰영역이 됨을 특징으로 하는 접합 파괴방지 반도체 장치.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860009799A 1986-11-19 1986-11-19 접합 파괴장치 반도체장치 KR900008746B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1019860009799A KR900008746B1 (ko) 1986-11-19 1986-11-19 접합 파괴장치 반도체장치
DE3737450A DE3737450C2 (de) 1986-11-19 1987-11-04 Feldeffekt-Halbleitervorrichtung mit Schutz vor Durchschlägen zwischen einem metallischen Anschluß und dem Substrat
US07/121,843 US4920445A (en) 1986-11-19 1987-11-17 Junction-breakdown protection semiconductor device
FR8715955A FR2606935B1 (fr) 1986-11-19 1987-11-18 Dispositif semiconducteur a protection contre les claquages de jonction
GB8727134A GB2199185B (en) 1986-11-19 1987-11-19 Semiconductor device with junction breakdown protection
JP62290775A JPH01125862A (ja) 1986-11-19 1987-11-19 接合破壊防止半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860009799A KR900008746B1 (ko) 1986-11-19 1986-11-19 접합 파괴장치 반도체장치

Publications (2)

Publication Number Publication Date
KR880006782A true KR880006782A (ko) 1988-07-25
KR900008746B1 KR900008746B1 (ko) 1990-11-29

Family

ID=19253485

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860009799A KR900008746B1 (ko) 1986-11-19 1986-11-19 접합 파괴장치 반도체장치

Country Status (6)

Country Link
US (1) US4920445A (ko)
JP (1) JPH01125862A (ko)
KR (1) KR900008746B1 (ko)
DE (1) DE3737450C2 (ko)
FR (1) FR2606935B1 (ko)
GB (1) GB2199185B (ko)

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US4918505A (en) * 1988-07-19 1990-04-17 Tektronix, Inc. Method of treating an integrated circuit to provide a temperature sensor that is integral therewith
DE4022022C2 (de) * 1989-07-12 1995-09-28 Fuji Electric Co Ltd Vertikal-Halbleitervorrichtung mit Zenerdiode als Überspannugsschutz
JPH03272180A (ja) * 1990-03-22 1991-12-03 Toshiba Corp 半導体集積回路
US5221635A (en) * 1991-12-17 1993-06-22 Texas Instruments Incorporated Method of making a field-effect transistor
US5246388A (en) * 1992-06-30 1993-09-21 Amp Incorporated Electrical over stress device and connector
US5369041A (en) * 1993-07-14 1994-11-29 Texas Instruments Incorporated Method for forming a silicon controlled rectifier
JP2611639B2 (ja) * 1993-11-25 1997-05-21 日本電気株式会社 半導体装置
US5962898A (en) * 1994-04-11 1999-10-05 Texas Instruments Incorporated Field-effect transistor
US5563438A (en) * 1994-10-26 1996-10-08 Alliedsignal Inc. Rugged CMOS output stage design
US5745323A (en) * 1995-06-30 1998-04-28 Analog Devices, Inc. Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes
US5705841A (en) * 1995-12-22 1998-01-06 Winbond Electronics Corporation Electrostatic discharge protection device for integrated circuits and its method for fabrication

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032818A (en) * 1975-11-10 1977-06-28 Burroughs Corporation Uniform current level control for display panels
JPS5392675A (en) * 1977-01-26 1978-08-14 Nippon Precision Circuits Protecting circuit
GB2034974B (en) * 1978-11-16 1983-04-13 Gen Electric Co Ltd Field-effect semiconductor devices
JPS5715459A (en) * 1980-07-01 1982-01-26 Fujitsu Ltd Semiconductor integrated circuit
JPS5787174A (en) * 1980-11-20 1982-05-31 Seiko Epson Corp Semiconductor integrated circuit device
GB2092377B (en) * 1981-01-30 1985-07-31 Rca Corp Protection circuit for integrated circuit devices
JPS583285A (ja) * 1981-06-30 1983-01-10 Fujitsu Ltd 半導体集積回路の保護装置
JPS5948951A (ja) * 1982-09-14 1984-03-21 Toshiba Corp 半導体保護装置
JPS5990958A (ja) * 1982-11-16 1984-05-25 Nec Corp 半導体装置
SE435436B (sv) * 1983-02-16 1984-09-24 Asea Ab Tvapoligt overstromsskydd
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DE3583301D1 (de) * 1984-03-31 1991-08-01 Toshiba Kawasaki Kk Schutzanordnung fuer einen mos-transistor.
DE3586268T2 (de) * 1984-05-03 1993-02-25 Digital Equipment Corp Eingangs-schutzanordnung fuer vlsi-schaltungsanordnungen.
JPS60246665A (ja) * 1984-05-22 1985-12-06 Nec Corp 入力保護装置
JPS6132464A (ja) * 1984-07-24 1986-02-15 Nec Corp Ｃｍｏｓ型集積回路装置
JPS6167952A (ja) * 1984-09-11 1986-04-08 Nec Corp Ｃｍｏｓ半導体装置
JPS61158175A (ja) * 1984-12-28 1986-07-17 Toshiba Corp プレ−ナ型トランジスタ装置
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Also Published As

Publication number Publication date
DE3737450A1 (de) 1988-06-01
KR900008746B1 (ko) 1990-11-29
DE3737450C2 (de) 1994-04-07
FR2606935B1 (fr) 1990-10-19
GB2199185B (en) 1991-03-27
GB2199185A (en) 1988-06-29
FR2606935A1 (fr) 1988-05-20
GB8727134D0 (en) 1987-12-23
US4920445A (en) 1990-04-24
JPH01125862A (ja) 1989-05-18

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