GB2179494B - Protection structures for integrated circuits - Google Patents
Protection structures for integrated circuitsInfo
- Publication number
- GB2179494B GB2179494B GB8520038A GB8520038A GB2179494B GB 2179494 B GB2179494 B GB 2179494B GB 8520038 A GB8520038 A GB 8520038A GB 8520038 A GB8520038 A GB 8520038A GB 2179494 B GB2179494 B GB 2179494B
- Authority
- GB
- United Kingdom
- Prior art keywords
- integrated circuits
- protection structures
- structures
- protection
- circuits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8520038A GB2179494B (en) | 1985-08-09 | 1985-08-09 | Protection structures for integrated circuits |
JP18669786A JPS6290964A (en) | 1985-08-09 | 1986-08-08 | Protection structure of integrated circuit |
DE19863626858 DE3626858A1 (en) | 1985-08-09 | 1986-08-08 | PROTECTIVE STRUCTURE FOR INTEGRATED CIRCUITS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8520038A GB2179494B (en) | 1985-08-09 | 1985-08-09 | Protection structures for integrated circuits |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8520038D0 GB8520038D0 (en) | 1985-09-18 |
GB2179494A GB2179494A (en) | 1987-03-04 |
GB2179494B true GB2179494B (en) | 1989-07-26 |
Family
ID=10583554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8520038A Expired GB2179494B (en) | 1985-08-09 | 1985-08-09 | Protection structures for integrated circuits |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS6290964A (en) |
DE (1) | DE3626858A1 (en) |
GB (1) | GB2179494B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR900008746B1 (en) * | 1986-11-19 | 1990-11-29 | 삼성전자 주식회사 | Semiconductor device protecting a connection |
DE3714647C2 (en) * | 1987-05-02 | 1993-10-07 | Telefunken Microelectron | Integrated circuit arrangement |
US5708289A (en) * | 1996-02-29 | 1998-01-13 | Sgs-Thomson Microelectronics, Inc. | Pad protection diode structure |
EP0905781A3 (en) * | 1997-09-30 | 2000-11-02 | Siemens Aktiengesellschaft | ESD protection diode |
JP6206058B2 (en) * | 2013-10-02 | 2017-10-04 | サンケン電気株式会社 | Semiconductor device |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1073551A (en) * | 1964-07-02 | 1967-06-28 | Westinghouse Electric Corp | Integrated circuit comprising a diode and method of making the same |
GB1188864A (en) * | 1967-07-06 | 1970-04-22 | Itt | Method for the Manufacturing of a Solid State Circuit Adaptable as H.F. Tuner. |
GB1281058A (en) * | 1968-12-31 | 1972-07-12 | Texas Instruments Inc | High speed semiconductor switching device |
GB1285488A (en) * | 1969-08-11 | 1972-08-16 | Rca Corp | Integrated circuits for ac line operation |
GB1373675A (en) * | 1971-05-27 | 1974-11-13 | Ibm | Transistor logic circuit |
US4027325A (en) * | 1975-01-30 | 1977-05-31 | Sprague Electric Company | Integrated full wave diode bridge rectifier |
US4117507A (en) * | 1976-06-22 | 1978-09-26 | Sgs-Ates Componeti Elettronici S.P.A. | Diode formed in integrated-circuit structure |
EP0042581A2 (en) * | 1980-06-17 | 1981-12-30 | Nec Corporation | Integrated circuit |
US4443808A (en) * | 1981-04-07 | 1984-04-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device |
EP0115143A2 (en) * | 1982-12-28 | 1984-08-08 | Fujitsu Limited | Integrated circuit with electrostatic breakdown prevention circuits |
-
1985
- 1985-08-09 GB GB8520038A patent/GB2179494B/en not_active Expired
-
1986
- 1986-08-08 JP JP18669786A patent/JPS6290964A/en active Pending
- 1986-08-08 DE DE19863626858 patent/DE3626858A1/en not_active Withdrawn
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1073551A (en) * | 1964-07-02 | 1967-06-28 | Westinghouse Electric Corp | Integrated circuit comprising a diode and method of making the same |
GB1188864A (en) * | 1967-07-06 | 1970-04-22 | Itt | Method for the Manufacturing of a Solid State Circuit Adaptable as H.F. Tuner. |
GB1281058A (en) * | 1968-12-31 | 1972-07-12 | Texas Instruments Inc | High speed semiconductor switching device |
GB1285488A (en) * | 1969-08-11 | 1972-08-16 | Rca Corp | Integrated circuits for ac line operation |
GB1373675A (en) * | 1971-05-27 | 1974-11-13 | Ibm | Transistor logic circuit |
US4027325A (en) * | 1975-01-30 | 1977-05-31 | Sprague Electric Company | Integrated full wave diode bridge rectifier |
US4117507A (en) * | 1976-06-22 | 1978-09-26 | Sgs-Ates Componeti Elettronici S.P.A. | Diode formed in integrated-circuit structure |
EP0042581A2 (en) * | 1980-06-17 | 1981-12-30 | Nec Corporation | Integrated circuit |
US4443808A (en) * | 1981-04-07 | 1984-04-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor device |
EP0115143A2 (en) * | 1982-12-28 | 1984-08-08 | Fujitsu Limited | Integrated circuit with electrostatic breakdown prevention circuits |
Also Published As
Publication number | Publication date |
---|---|
GB8520038D0 (en) | 1985-09-18 |
GB2179494A (en) | 1987-03-04 |
DE3626858A1 (en) | 1987-02-19 |
JPS6290964A (en) | 1987-04-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PE20 | Patent expired after termination of 20 years |
Effective date: 20050808 |