GB1188864A - Method for the Manufacturing of a Solid State Circuit Adaptable as H.F. Tuner. - Google Patents

Method for the Manufacturing of a Solid State Circuit Adaptable as H.F. Tuner.

Info

Publication number
GB1188864A
GB1188864A GB3220768A GB3220768A GB1188864A GB 1188864 A GB1188864 A GB 1188864A GB 3220768 A GB3220768 A GB 3220768A GB 3220768 A GB3220768 A GB 3220768A GB 1188864 A GB1188864 A GB 1188864A
Authority
GB
United Kingdom
Prior art keywords
type
semi
tuner
diode
resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3220768A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19671589690 external-priority patent/DE1589690C3/en
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB1188864A publication Critical patent/GB1188864A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,188,864. Semi-conductor devices. ITT INDUSTRIES Inc. 5 July, 1968 [6 July, 1967], No. 32207/68. Heading H1K. A method of manufacturing an integrated circuit with at least one high-frequency transistor and one diode comprises producing by planar diffusion a low-resistivity first island 5 of N+type conductivity on a P-type conductivity substrate 4 of high resistivity, then applying epitaxially a thin layer of N-type semi-conductor material, then producing a ring 6 of N+type conductivity material within the marginal area of the first island, and then applying epitaxially a further layer of N-type semi-conductor material to complete the epitaxial region 3 within which dopants are diffused to produce the diode junction 7 and the base-collector junction 10 and emitter-base junction 14 of the transistor. A contact 8 is alloyed into the body to contact the low resistivity N+type region 5, 6. The semiconductor may be of silicon. In the case of N- type silicon, boron is used to form the diode. The circuit may be used as an H.F. tuner. Further devices, such as switching diodes, may be included in the circuit, when zones are provided to isolate them by virtue of reverse biased PN junctions.
GB3220768A 1967-07-06 1968-07-05 Method for the Manufacturing of a Solid State Circuit Adaptable as H.F. Tuner. Expired GB1188864A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19671589690 DE1589690C3 (en) 1967-07-06 1967-07-06 Method of manufacturing a monolithic solid-state circuit

Publications (1)

Publication Number Publication Date
GB1188864A true GB1188864A (en) 1970-04-22

Family

ID=5680045

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3220768A Expired GB1188864A (en) 1967-07-06 1968-07-05 Method for the Manufacturing of a Solid State Circuit Adaptable as H.F. Tuner.

Country Status (1)

Country Link
GB (1) GB1188864A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2179494A (en) * 1985-08-09 1987-03-04 Plessey Co Plc Protection structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2179494A (en) * 1985-08-09 1987-03-04 Plessey Co Plc Protection structure
GB2179494B (en) * 1985-08-09 1989-07-26 Plessey Co Plc Protection structures for integrated circuits

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Legal Events

Date Code Title Description
PS Patent sealed
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PLNP Patent lapsed through nonpayment of renewal fees