GB899919A - Improvements in semi-conductive devices - Google Patents

Improvements in semi-conductive devices

Info

Publication number
GB899919A
GB899919A GB2982/59A GB298259A GB899919A GB 899919 A GB899919 A GB 899919A GB 2982/59 A GB2982/59 A GB 2982/59A GB 298259 A GB298259 A GB 298259A GB 899919 A GB899919 A GB 899919A
Authority
GB
United Kingdom
Prior art keywords
layer
central
pit
junction
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2982/59A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shockley Transistor Corp
Original Assignee
Shockley Transistor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL237230D priority Critical patent/NL237230A/xx
Application filed by Shockley Transistor Corp filed Critical Shockley Transistor Corp
Priority to GB2982/59A priority patent/GB899919A/en
Priority to DES61697A priority patent/DE1090330B/en
Priority to FR787834A priority patent/FR1229784A/en
Publication of GB899919A publication Critical patent/GB899919A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

899,919. Semi-conductor devices. SHOCKLEY TRANSISTOR CORPORATION. Jan. 27, 1959, No. 2982/59. Class 37. A semi-conductor device comprises a body having at at least one PN junction, the inner region of which has a high concentration gradient to provide the characteristic breakdown voltage breakdown of the device, and the outer region a lower concentration gradient and a consequent higher voltage breakdown. The arrangement renders the avalanche breakdown voltage independent of changes in condition at the surface regions of the junction. Figs. 2 and 3 show a four-layer construction comprising three PN junctions 12, 13 and 14, the top and bottom layers and the central regions of at least one of the two inner layers having a higher impurity concentration than the remainder. If a voltage is applied to reverse bias the central junction, breakdown occurs first in the central region B while the outer portion H is unaffected. The voltage necessary to sustain conduction then falls and the device has a negative resistance characteristic. Fig. 5 shows an alternative arrangement in which masking and diffusing technique is used to provide a central P++, P+, N+, N++ region with surrounding regions of lesser gradient. A four-layer device of the required form may be produced by providing oxide layers on the top and bottom of a P-type silicon wafer, etching holes in the oxide layer, depositing boron from boron chloride in nitrogen at 1040‹ C., then at 1300‹ C. to diffuse the boron to produce an inner P+ layer, and etching away the remainder of the oxide layers. Additional N or P layers may then be applied to provide diodes or transistors. In a further example, a pit is etched through a P-layer on an N-type body, an acceptor impurity is then diffused into the pit to form a P+ layer, followed, if desired, by a further N-type layer over the pit and the surrounding portion. Fig. 9 shows an NPN transistor having a steep concentration gradient junction at the bottom of pit 36 produced in this manner; the base electrode may be at the edge of the central P-layer, or part of the upper N-layer may be removed to enable a top base electrode to be provided. A PNPN switching diode (Fig. 11, not shown) is also described.
GB2982/59A 1958-03-19 1959-01-27 Improvements in semi-conductive devices Expired GB899919A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
NL237230D NL237230A (en) 1958-03-19
GB2982/59A GB899919A (en) 1958-03-19 1959-01-27 Improvements in semi-conductive devices
DES61697A DE1090330B (en) 1958-03-19 1959-02-09 Semiconductor arrangement with a semiconductor body with two zones of opposite conductivity type and one electrode on each of the two zones
FR787834A FR1229784A (en) 1958-03-19 1959-02-26 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1229784XA 1958-03-19 1958-03-19
GB2982/59A GB899919A (en) 1958-03-19 1959-01-27 Improvements in semi-conductive devices

Publications (1)

Publication Number Publication Date
GB899919A true GB899919A (en) 1962-06-27

Family

ID=9749687

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2982/59A Expired GB899919A (en) 1958-03-19 1959-01-27 Improvements in semi-conductive devices

Country Status (4)

Country Link
DE (1) DE1090330B (en)
FR (1) FR1229784A (en)
GB (1) GB899919A (en)
NL (1) NL237230A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1185729B (en) * 1961-03-01 1965-01-21 Siemens Ag Esaki diode with surface protection of the pn junction
NL275617A (en) * 1961-03-10
NL277811A (en) * 1961-04-27 1900-01-01
US3152928A (en) * 1961-05-18 1964-10-13 Clevite Corp Semiconductor device and method
DE1208408B (en) * 1961-06-05 1966-01-05 Gen Electric Controllable and switchable semiconductor component with four layers of alternating conductivity types
DE1300164B (en) * 1967-01-26 1969-07-31 Itt Ind Gmbh Deutsche Method for manufacturing Zener diodes

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1000115B (en) * 1954-03-03 1957-01-03 Standard Elektrik Ag Process for the production of semiconductor layer crystals with PN junction
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US2792540A (en) * 1955-08-04 1957-05-14 Bell Telephone Labor Inc Junction transistor

Also Published As

Publication number Publication date
FR1229784A (en) 1960-09-09
NL237230A (en)
DE1090330B (en) 1960-10-06

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