DE1185729B - Esaki diode with surface protection of the pn junction - Google Patents
Esaki diode with surface protection of the pn junctionInfo
- Publication number
- DE1185729B DE1185729B DES72778A DES0072778A DE1185729B DE 1185729 B DE1185729 B DE 1185729B DE S72778 A DES72778 A DE S72778A DE S0072778 A DES0072778 A DE S0072778A DE 1185729 B DE1185729 B DE 1185729B
- Authority
- DE
- Germany
- Prior art keywords
- junction
- zone
- tunneling
- esaki diode
- degenerate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 16
- 230000005641 tunneling Effects 0.000 claims description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 238000005275 alloying Methods 0.000 claims description 2
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
Description
Esaki-Diode mit Oberflächenschutz des pn-Übergangs Vor einigen Jahren berichtete Esaki zum ersten Mal über einen neuen Effekt bei sehr steilen Germanium-pn-Übergängen (L. Esaki, Phys. Rev. 109, 1958, S. 603). Er konnte zeigen, daß diese pn-Übersänge in der Flußrichtung einen Bereich negativen Widerstandes aufweisen. Wenn sowohl das n- als auch das p-Gebiet so hoch dotiert sind, daß Entartung vorliegt, und wenn der Wechsel der Dotierung im Übergangsgebiet nahezu abrupt erfolgt, so daß die Feldstärke dort Werte von einigen 105 V/cm erreicht, können bei kleinen Flußspannungen Elektronen aus den untersten Niveaus des Leitungsbandes im n-Gebiet unmittelbar in die obersten Niveaus des Valenzbandes im p-Gebiet durchdringen (sogenannter »Tunneleffekt«). In neuerer Zeit sind Halbleiterdioden bekanntgeworden, die den von Esaki entdeckten Effekt in sehr steilen pn-Übergängen ausnutzen; sie werden daher als Esaki-Dioden bezeichnet. Esaki-Dioden und Verfahren zu ihrer Herstellung sind bereits vorgeschlagen worden.Esaki diode with surface protection of the pn junction A few years ago Esaki reported for the first time about a new effect at very steep germanium-pn-junctions (L. Esaki, Phys. Rev. 109, 1958, p. 603). He was able to show that this pn-oversong have a region of negative resistance in the direction of flow. If both the n and p regions are so highly doped that degeneracy is present, and if so the change in doping in the transition region takes place almost abruptly, so that the field strength where values of a few 105 V / cm are reached, electrons can be used at low flow voltages from the lowest levels of the conduction band in the n-area directly into the uppermost Penetrate levels of the valence band in the p-region (so-called "tunnel effect"). More recently, semiconductor diodes have become known that discovered the one from Esaki Use the effect in very steep pn junctions; they are therefore called Esaki diodes designated. Esaki diodes and methods of making them have been proposed been.
Weiterhin ist ein anderes Halbleiterbauelement mit einem Halbleiterkörper mit zwei Zonen entgegengesetztenLeitfähigkeitstyps undeinempn-Übergangzwischen diesen beidenZonen sowie je einerElektrode an den beiden Zonen bekanntgeworden. Bei dieser Anordnung wird an die beiden Elektroden eine so hohe Spannung angelegt, daß im Halbleiterkörper eine Lawine auftritt. Am mittleren Flächenteil des pn-Übergangs wird eine gegenüber dem äußeren Flächenteil hohe Konzentration der Fremdatome vorgesehen, so daß die Lawine sich anfänglich im mittleren Flächenteil ausbildet. Bei dieser Anordnung handelt es sich insbesondere um eine verbesserte, vier Zonen aufweisende Halbleiteranordnung, die verhältnismäßig unempfindlich gegen äußere Bedingungen ist.Furthermore, there is another semiconductor component with a semiconductor body with two zones of opposite conductivity type and a pn junction between them became known to both zones as well as an electrode on each of the two zones. At this Arrangement so high a voltage is applied to the two electrodes that in the semiconductor body an avalanche occurs. At the middle part of the surface of the pn-junction there is an opposite the outer surface part provided high concentration of foreign atoms, so that the Avalanche initially forms in the central part of the area. With this arrangement it is in particular an improved, four-zone semiconductor arrangement, which is relatively insensitive to external conditions.
Es hat sich gezeigt, daß der an die Oberfläche des Halbleiterkörpers grenzende pn-Übergang einer Esaki-Diode üblicher Bauart besonders empfindlich ist. Infolge der hohen Feldstärke in derartigen pn-Übergängen lagern sich auch in vakuumdichten Gehäusen unverrfeidliche Gasreste auf dem pn-Übergang ab und verschlechtern die Kennlinie der Esaki-Diode.It has been shown that the to the surface of the semiconductor body bordering pn junction of an Esaki diode of conventional design is particularly sensitive. As a result of the high field strength in such pn junctions are also stored in vacuum-tight Enclose unavoidable gas residues on the pn junction and worsen the Characteristic curve of the Esaki diode.
Gegenstand der vorliegenden Erfindung ist eine Esaki-Diode mit Oberflächenschutz des pn-Übergangs. Der Schutz des pn-Übergangs wird erfindungsgemäß dadurch erreicht, daß zwischen dem tunnelnden pn-Übergang zweier entartet dotierter Zonen und der Oberfläche des Halbleiterkörpers ein nicht tunnelnder pn-Übergang zwischen einer entartet und einer nicht entartet dotierten Zone mit kleiner, z. B. möglichst kleiner, pn-Übergangsfläche angeordnet ist. Der nunmehr die Oberfläche des Halbleiterkörpers berührende nicht tunnelnde pn-Übergang ist infolge der wesentlich geringeren Feldstärke gegen äußere Einwirkungen nicht so empfindlich.The present invention relates to an Esaki diode with surface protection of the pn junction. The protection of the pn junction is achieved according to the invention by that between the tunneling pn junction of two degenerate doped zones and the Surface of the semiconductor body a non-tunneling pn junction between a degenerate and a non-degenerate doped zone with small, z. B. as small as possible, pn junction is arranged. The now the surface of the semiconductor body Contacting non-tunneling pn-junction is due to the significantly lower field strength not so sensitive to external influences.
Zur weiteren Erläuterung der Erfindung wird auf die Zeichnung verwiesen, in der ein Ausführungsbeispiel der Erfindung dargestellt ist.To further explain the invention, reference is made to the drawing, in which an embodiment of the invention is shown.
Ein Halbleiterkörper 11, z. B. aus n-leitendem Galliumarsenid, wird in einem zugeschmolzenen Gefäß, z. B. eine Quarzampulle, bei einer Temperatur von 900° C für etwa 1 Stunde einer Zn-Atmosphäre ausgesetzt. Das Zn ist ein p-dotierender Stoff und diffundiert in das n-leitende GaAs ein. Auf Grund dieses Diffusionsvorgangs bildet sich ein nicht tunnelnder pn-Übergang 12.A semiconductor body 11, e.g. B. of n-type gallium arsenide, is in a sealed vessel, for. B. a quartz ampoule, exposed to a Zn atmosphere at a temperature of 900 ° C for about 1 hour. The Zn is a p-doping substance and diffuses into the n-conducting GaAs. As a result of this diffusion process, a non-tunneling pn junction 12 is formed.
Anschließend wird z. B. eine 5 Gewichtsprozent Zink enthaltende Zinnkugel 13 bei einer Temperatur von 600° C 1 Minute lang in den Halbleiterkörper 11 einlegiert. Dieser Legiervorgang bewirkt in dem n-leitenden Ausgangsmaterial 11 einen tunnelnden pn-Übergang 14. Die Zinnkugel wird so tief einlegiert, daß sie mit der Diffusionsschicht 15 einen sperrfreien Kontakt bildet. Die n-leitende Schicht erhält einen sperrfreien Kontakt 16. Im Anschluß daran wird der nicht tunnelnde pn-Übergang nachträglich durch Ätzen, beispielsweise in Königswasser, bis auf einen notwendigen Rest abgetragen. Die Abätzung darf nur so weit erfolgen, daß der tunnelnde pn-Übergang durch den nicht tunnelnden pn-Übergang gegen die Oberfläche des Halbleiterkörpers noch abgeschirmt ist.Then z. B. a tin ball 13 containing 5 percent by weight of zinc is alloyed into the semiconductor body 11 at a temperature of 600 ° C. for 1 minute. This alloying process causes a tunneling pn junction 14 in the n-conducting starting material 11. The tin ball is alloyed so deep that it forms a barrier-free contact with the diffusion layer 15. The n-conductive layer receives a non-blocking contact 16. Following this, the non-tunneling pn junction is subsequently removed by etching, for example in aqua regia, except for a necessary residue. The etching may only take place so far that the tunneling pn junction is still shielded from the surface of the semiconductor body by the non-tunneling pn junction.
Elemente aus der IV. Gruppe des Periodischen Systems, z. B. Silizium oder Germanium, oder Halbleiterverbindungen, z. B. AIrrBv_Verbindungen, wie Indium-Arsenid, Indium-Antimonid, Indium-Phosphid, Gallium Antimonid oder Gallium-Arsenid, sind besonders vorteilhaft für den Halbleiterkörper der Esaki-Diode gemäß der Erfindung zu verwenden.Elements from group IV of the Periodic Table, e.g. B. silicon or germanium, or semiconductor compounds, e.g. B. AIrrBv_Verbindungen, such as indium arsenide, Indium antimonide, indium phosphide, Gallium antimonide or gallium arsenide, are particularly advantageous for the semiconductor body of the Esaki diode according to the invention to use.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES72778A DE1185729B (en) | 1961-03-01 | 1961-03-01 | Esaki diode with surface protection of the pn junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES72778A DE1185729B (en) | 1961-03-01 | 1961-03-01 | Esaki diode with surface protection of the pn junction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1185729B true DE1185729B (en) | 1965-01-21 |
Family
ID=7503469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES72778A Pending DE1185729B (en) | 1961-03-01 | 1961-03-01 | Esaki diode with surface protection of the pn junction |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1185729B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1090330B (en) * | 1958-03-19 | 1960-10-06 | Shockley Transistor Corp | Semiconductor arrangement with a semiconductor body with two zones of opposite conductivity type and one electrode on each of the two zones |
| FR1246041A (en) * | 1959-01-27 | 1960-11-10 | Rca Corp | Semiconductor device and method for its manufacture |
-
1961
- 1961-03-01 DE DES72778A patent/DE1185729B/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1090330B (en) * | 1958-03-19 | 1960-10-06 | Shockley Transistor Corp | Semiconductor arrangement with a semiconductor body with two zones of opposite conductivity type and one electrode on each of the two zones |
| FR1246041A (en) * | 1959-01-27 | 1960-11-10 | Rca Corp | Semiconductor device and method for its manufacture |
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