GB1172109A - Improvements relating to Semiconductor Devices - Google Patents
Improvements relating to Semiconductor DevicesInfo
- Publication number
- GB1172109A GB1172109A GB3241767A GB3241767A GB1172109A GB 1172109 A GB1172109 A GB 1172109A GB 3241767 A GB3241767 A GB 3241767A GB 3241767 A GB3241767 A GB 3241767A GB 1172109 A GB1172109 A GB 1172109A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- diffused
- layer
- conductor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- 229910052785 arsenic Inorganic materials 0.000 abstract 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
1,172,109. Semi-conductor devices. FERRANTI Ltd. 2 July, 1968 [14 July, 1967], No. 32417/67. Heading H1K. In a semi-conductor device comprising a substrate on which is a layer of semi-conductor material containing two diffused regions of opposite conductivity types and a low resistivity layer situated between the substrate and the diffused regions, the low resistivity layer is provided with an aperture opposite one of the regions. The aperture is said to reduce leakage current without significantly increasing the series resistance. As shown, Fig. 2, an NPN transistor is produced by diffusing arsenic into an annular area of a P-type silicon substrate 1 doped with boron and epitaxially depositing an N-type layer 3 doped with arsenic, the diffused arsenic partially diffusing out into the epitaxial layer and forming an N + type region 15<SP>1</SP>. The surface of the epitaxial layer is masked and boron is diffused-in to form the P-type base region 5, and phosphorus is diffused-in to form emitter region 9 and two collector contact regions 7. Aluminium is deposited to form emitter, base and collector contacts 14, 12, 10 which are alloyed to the semi-conductor. A varactor diode, Fig. 3 (not shown), is similarly produced. The substrate may be of glass or ceramic instead of semi-conductor material.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3241767A GB1172109A (en) | 1967-07-14 | 1967-07-14 | Improvements relating to Semiconductor Devices |
| NL6809475A NL6809475A (en) | 1967-07-14 | 1968-07-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3241767A GB1172109A (en) | 1967-07-14 | 1967-07-14 | Improvements relating to Semiconductor Devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1172109A true GB1172109A (en) | 1969-11-26 |
Family
ID=10338279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3241767A Expired GB1172109A (en) | 1967-07-14 | 1967-07-14 | Improvements relating to Semiconductor Devices |
Country Status (2)
| Country | Link |
|---|---|
| GB (1) | GB1172109A (en) |
| NL (1) | NL6809475A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2088077A1 (en) * | 1970-05-14 | 1972-01-07 | Radiotechnique Compelec | |
| US4958209A (en) * | 1988-05-10 | 1990-09-18 | Stc Plc | Varicap diode structure |
-
1967
- 1967-07-14 GB GB3241767A patent/GB1172109A/en not_active Expired
-
1968
- 1968-07-04 NL NL6809475A patent/NL6809475A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2088077A1 (en) * | 1970-05-14 | 1972-01-07 | Radiotechnique Compelec | |
| US4958209A (en) * | 1988-05-10 | 1990-09-18 | Stc Plc | Varicap diode structure |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6809475A (en) | 1969-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |