KR970067916A - 접합누설이 적은 저 스트레스 광다이오드 - Google Patents

접합누설이 적은 저 스트레스 광다이오드 Download PDF

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KR970067916A
KR970067916A KR1019970006752A KR19970006752A KR970067916A KR 970067916 A KR970067916 A KR 970067916A KR 1019970006752 A KR1019970006752 A KR 1019970006752A KR 19970006752 A KR19970006752 A KR 19970006752A KR 970067916 A KR970067916 A KR 970067916A
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South Korea
Prior art keywords
photodiode
low
substrate
junction leakage
material layer
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KR1019970006752A
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KR100278495B1 (ko
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리챠드 빌링스 메릴
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클라크 3세 존 엠
내셔널 세미컨덕터 코오포레이션
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Publication of KR970067916A publication Critical patent/KR970067916A/ko
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Publication of KR100278495B1 publication Critical patent/KR100278495B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

본 발명은 접합 누설이 적은 저 스트레스 광다이오드를 제공하기 위한 것으로서, 이 광다이오드는 제 1 전도형의 반도체 기판내에 형성된 광다이오드에 있어서, 제 2 전도형 영역의 상부표면이 기판의 상부표면과 접하도록 기판내에 형성된 제2 전도형의 영역과 기판의 상부표면위에 형성된 유전체 재료층 및 영역의 상부표면과 접하는 기판의 상부표면위에 전도성 재료층이 형성되어 상기 영역을 둘러싸도록 상기 유전체 재료층위에 형성된 전도성 재료층을 포함한다.

Description

접합누설이 적은 저 스트레스 광다이오드
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도2는 본 발명에 따른 광다이오드(100)를 도시한 단면도.

Claims (3)

  1. 제1 전도형의 반도체 기판내에 형성된 광다이오드에 있어서 제2 전도형 영역의 상부표면이 기판의 상부표면과 접하도록 상기 기판내에 형성된 제2 전도형의 영역과, 상기 기판의 상부표면위에 형성된 유전체 재료층 및 상기 영역의 상부표면과 접하는 기판의 상부표면위에 전도성 재료층이 형성되어 상기 영역을 둘러싸도록 상기 유전체 재료층위에 형성된 전도성 재료층을 포함하는 것을 특징으로 하는 광다이오드.
  2. 제1항에 있어서 상기 영역에는 n형 재료가 주입되는 것을 특징으로 하는 광다이오드.
  3. 제2항에 있어서 상기 n형 재료는 인인 것을 특징으로 하는 광다이오드.
KR1019970006752A 1996-03-01 1997-02-28 접합누설이 적은 저 스트레스 광다이오드 및 그의 형성방법 KR100278495B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/609,566 1996-03-01
US8/609,566 1996-03-01
US08/609,566 US5841158A (en) 1996-03-01 1996-03-01 Low-stress photodiode with reduced junction leakage

Publications (2)

Publication Number Publication Date
KR970067916A true KR970067916A (ko) 1997-10-13
KR100278495B1 KR100278495B1 (ko) 2001-02-01

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KR1019970006752A KR100278495B1 (ko) 1996-03-01 1997-02-28 접합누설이 적은 저 스트레스 광다이오드 및 그의 형성방법

Country Status (3)

Country Link
US (1) US5841158A (ko)
KR (1) KR100278495B1 (ko)
DE (1) DE19707803A1 (ko)

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US5859450A (en) * 1997-09-30 1999-01-12 Intel Corporation Dark current reducing guard ring
US6005619A (en) * 1997-10-06 1999-12-21 Photobit Corporation Quantum efficiency improvements in active pixel sensors
US6259124B1 (en) * 1998-08-07 2001-07-10 Eastman Kodak Company Active pixel sensor with high fill factor blooming protection
US6617174B2 (en) 1999-06-08 2003-09-09 Tower Semiconductor Ltd. Fieldless CMOS image sensor
US6218692B1 (en) * 1999-11-23 2001-04-17 Eastman Kodak Company Color active pixel sensor with electronic shuttering, anti-blooming and low cross talk
US6710804B1 (en) 2000-01-18 2004-03-23 Eastman Kodak Company CMOS active pixel image sensor with extended dynamic range and sensitivity
US6730969B1 (en) 2002-06-27 2004-05-04 National Semiconductor Corporation Radiation hardened MOS transistor
US20050184321A1 (en) * 2004-02-25 2005-08-25 National Semiconductor Corporation Low dark current CMOS image sensor pixel having a photodiode isolated from field oxide
US7053354B1 (en) 2004-05-24 2006-05-30 Eastman Kodak Company Method for reducing dark current for an array of active pixel sensor cells

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US4206003A (en) * 1977-07-05 1980-06-03 Honeywell Inc. Method of forming a mercury cadmium telluride photodiode
US5191398A (en) * 1987-09-02 1993-03-02 Nec Corporation Charge transfer device producing a noise-free output
US5070032A (en) * 1989-03-15 1991-12-03 Sundisk Corporation Method of making dense flash eeprom semiconductor memory structures
US5210433A (en) * 1990-02-26 1993-05-11 Kabushiki Kaisha Toshiba Solid-state CCD imaging device with transfer gap voltage controller
US5324958A (en) * 1991-02-19 1994-06-28 Synaptics, Incorporated Integrating imaging systgem having wide dynamic range with sample/hold circuits
JP2833941B2 (ja) * 1992-10-09 1998-12-09 三菱電機株式会社 固体撮像装置とその製造方法
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Publication number Publication date
US5841158A (en) 1998-11-24
KR100278495B1 (ko) 2001-02-01
DE19707803A1 (de) 1997-09-11

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