KR910008861A - 집적회로소자 - Google Patents

집적회로소자 Download PDF

Info

Publication number
KR910008861A
KR910008861A KR1019900015898A KR900015898A KR910008861A KR 910008861 A KR910008861 A KR 910008861A KR 1019900015898 A KR1019900015898 A KR 1019900015898A KR 900015898 A KR900015898 A KR 900015898A KR 910008861 A KR910008861 A KR 910008861A
Authority
KR
South Korea
Prior art keywords
conductive
semiconductor layer
impurity region
conductive semiconductor
high concentration
Prior art date
Application number
KR1019900015898A
Other languages
English (en)
Other versions
KR940008260B1 (ko
Inventor
고지 시라이
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910008861A publication Critical patent/KR910008861A/ko
Application granted granted Critical
Publication of KR940008260B1 publication Critical patent/KR940008260B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Abstract

내용 없음

Description

집적회로소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 4 도는 본 발명에 따른 소거를 개략적으로 나타낸 단면도이다.

Claims (1)

  1. 제1도전형 반도체기판(10)과, 이에 중첩되어 설치된 제2도전형 반도체층(14), 이 반도체층(14)을 관통해서 형성되어 상기 제1도전형 반도체기판(10)에 접하는 제1도전형 제1불순물영역(21,15), 이 제1도전형 제1불순물영역(21,15)으로부터 서로 연속해서 형성된 제1 및 제2도전형 고농도불순물영역(25,27), 상기 각 불순물영역(21,15,25,27)을 사이에 둔 상기 제2도전형 반도체층(14)부분에 형성된 제1도전형 제2불순물영역(22), 이 제2불순물영역(22)내에 형성된 제1도전형 고농도 제3불순물영역(28), 서로 인접하는 각 불순물영역에 의해 형성되어 상기 제2도전형 반도체층(14) 표면이 노출되는 PN 접합단부, 이 접합 단부를 피복해서 형성되는 절연물층(17), 이 절연물층(17)상에 형성되는 도체 또는 반도체층으로 이루어지는 게이트전극(18), 상기 제1 및 제2도전형 고농도불순물영역(25,27)에 접속되어 형성된 애노드전극(31) 및, 상기 제1도전형 고농도 제3불순물영역(28)에 접속되어 형성된 캐소드 전극(32)을 구비하여 구성된 것을 특징으로 하는 집적회로소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900015898A 1989-10-06 1990-10-06 집적회로소자 KR940008260B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP01-261347 1989-10-06
JP1-261347 1989-10-06
JP1261347A JPH06103745B2 (ja) 1989-10-06 1989-10-06 集積回路素子

Publications (2)

Publication Number Publication Date
KR910008861A true KR910008861A (ko) 1991-05-31
KR940008260B1 KR940008260B1 (ko) 1994-09-09

Family

ID=17360575

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900015898A KR940008260B1 (ko) 1989-10-06 1990-10-06 집적회로소자

Country Status (6)

Country Link
US (1) US5202573A (ko)
EP (1) EP0451286B1 (ko)
JP (1) JPH06103745B2 (ko)
KR (1) KR940008260B1 (ko)
DE (1) DE69029468T2 (ko)
WO (1) WO1991005372A1 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324966A (en) * 1992-04-07 1994-06-28 Toyo Denki Seizo Kabushiki Kaisha MOS-controlled thyristor
DE69207410T2 (de) * 1992-09-18 1996-08-29 Cons Ric Microelettronica Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren
DE69326771T2 (de) 1993-12-07 2000-03-02 St Microelectronics Srl Ausgangstufe mit Transistoren von unterschiedlichem Typ
US5710451A (en) * 1996-04-10 1998-01-20 Philips Electronics North America Corporation High-voltage lateral MOSFET SOI device having a semiconductor linkup region
WO1998012755A1 (fr) * 1996-09-17 1998-03-26 Ngk Insulators, Ltd. Dispositif semi-conducteur
US7276788B1 (en) 1999-08-25 2007-10-02 Micron Technology, Inc. Hydrophobic foamed insulators for high density circuits
US7335965B2 (en) * 1999-08-25 2008-02-26 Micron Technology, Inc. Packaging of electronic chips with air-bridge structures
US6890847B1 (en) * 2000-02-22 2005-05-10 Micron Technology, Inc. Polynorbornene foam insulation for integrated circuits
JP2002083781A (ja) 2000-09-06 2002-03-22 Univ Tohoku 半導体デバイス
US7265740B2 (en) * 2002-08-30 2007-09-04 Toshiba Matsushita Display Technology Co., Ltd. Suppression of leakage current in image acquisition
US8049307B2 (en) * 2009-01-23 2011-11-01 Vanguard International Semiconductor Corporation Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2430416C3 (de) * 1974-06-25 1979-03-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Integrierte Koppelpunktschaltung
US4403395A (en) * 1979-02-15 1983-09-13 Texas Instruments Incorporated Monolithic integration of logic, control and high voltage interface circuitry
JPS6112072A (ja) * 1984-06-27 1986-01-20 Hitachi Ltd 半導体装置
FR2571178B1 (fr) * 1984-09-28 1986-11-21 Thomson Csf Structure de circuit integre comportant des transistors cmos a tenue en tension elevee, et son procede de fabrication
US4755697A (en) * 1985-07-17 1988-07-05 International Rectifier Corporation Bidirectional output semiconductor field effect transistor
JPS6251260A (ja) * 1985-08-30 1987-03-05 Hitachi Ltd 半導体装置
JPS6276557A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 絶縁ゲ−ト型自己タ−ンオフ素子
JPS63288064A (ja) * 1987-05-20 1988-11-25 Toshiba Corp 複合サイリスタ
JPH01145867A (ja) * 1987-12-01 1989-06-07 Nec Corp 伝導度変調型ｍｏｓｆｅｔ
US5266715A (en) * 1991-03-06 1993-11-30 Ciba-Geigy Corporation Glass coating with improved adhesion and weather resistance
JPH06276557A (ja) * 1993-03-18 1994-09-30 Fujitsu Ltd 音声信号処理装置

Also Published As

Publication number Publication date
US5202573A (en) 1993-04-13
EP0451286A4 (en) 1991-11-27
EP0451286B1 (en) 1996-12-18
EP0451286A1 (en) 1991-10-16
DE69029468T2 (de) 1997-05-15
KR940008260B1 (ko) 1994-09-09
JPH06103745B2 (ja) 1994-12-14
DE69029468D1 (de) 1997-01-30
WO1991005372A1 (en) 1991-04-18
JPH03124065A (ja) 1991-05-27

Similar Documents

Publication Publication Date Title
KR870005464A (ko) 반도체장치
KR840001392A (ko) 절연 게이트형 전계효과 트랜지스터(Insulated gate field effect transistor)
KR950034767A (ko) Mis형 반도체장치
KR970067716A (ko) 반도체 장치 및 그 제조방법
KR830008401A (ko) 절연 게이트형 트랜지스터
KR910019235A (ko) 반도체기억장치
KR850007718A (ko) 반도체 장치
KR850000815A (ko) 정확히 설정된 동작전압을 갖는 반도체 과전압 억제기 및 그의 제조방법
KR920015577A (ko) 반도체장치
KR900019261A (ko) 반도체장치
KR910008861A (ko) 집적회로소자
KR900013652A (ko) 감소된 온 저항을 가진 soi구조의 고전압 반도체 장치
KR930005259A (ko) 반도체 장치 및 그 제조 방법
KR920005280A (ko) Mos형 반도체장치
KR890013746A (ko) 쌍극성 트랜지스터 및 그 제조방법
KR910008843A (ko) Mos형 집적회로
KR860009489A (ko) 반도체 집적회로장치 및 그 제조방법
KR850005169A (ko) 우물영역을 갖는 반도체기판상에 형성되는 mis형 반도체장치
KR910008844A (ko) 반도체 장치
KR910010731A (ko) 반도체장치 및 그 제조방법
KR970067916A (ko) 접합누설이 적은 저 스트레스 광다이오드
KR840008213A (ko) 반도체 장치
KR900015311A (ko) 반도체장치 및 그 제조방법
KR910017656A (ko) 반도체장치
KR900015316A (ko) 반도체장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060831

Year of fee payment: 13

LAPS Lapse due to unpaid annual fee