KR840001392A - 절연 게이트형 전계효과 트랜지스터(Insulated gate field effect transistor) - Google Patents

절연 게이트형 전계효과 트랜지스터(Insulated gate field effect transistor) Download PDF

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KR840001392A
KR840001392A KR1019820003702A KR820003702A KR840001392A KR 840001392 A KR840001392 A KR 840001392A KR 1019820003702 A KR1019820003702 A KR 1019820003702A KR 820003702 A KR820003702 A KR 820003702A KR 840001392 A KR840001392 A KR 840001392A
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South Korea
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impurity
field effect
effect transistor
layer
insulated gate
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KR1019820003702A
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KR900004179B1 (ko
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히데오 수나미 (외 4)
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미쓰다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음

Description

절연 게이트형 전계효과 트랜지스터(Insulated gate field effect transistor)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 하나의 실시예를 나타내는 단면도.

Claims (8)

  1. 제1도전형의 반도체 기판과, 그 반도체 기판위의 표면영역 내에 있는 소정의 찬넬영역에 대응하여 형성되는 게이트 전극과, 그 게이트 전극과 상기 반도체 기판 사이에 퍼져있는 게이트 절연막이 있으며, 그 찬넬 영역을 사이에 둔 소스와 드레인 영역중 적어도 한쪽의 영역이 완만한 경사의 불순물 분포가 되게한 제2도전형의 불순물층으로 형성되고, 또, 상기 찬넬영역에서 장기 반도체 기판의 깊이 방향으로 표면에 가까운 곳에 제2도전형의 제1불순물 분포층을 만들고, 또 그 제1불순물 분포층보다 깊은 곳에는 제1도전형의 제2불순물 분포층을 갖게 하는 것을 특징으로 하는 절연 게이트형 전계 효과 트랜지스터.
  2. 상기 제2의 불순물 분포층에서 불순물 농도의 피이크 부분이 상기 반도체 기판의 내부에 있게 한 것을 특징으로 하는 특허청구범위 1의 절연 게이트형 전계 효과 트랜지스터.
  3. 상기 제2의 불순물 분포는 적어도 상기 제2도전형의 불순물층의 깊이와 동등한 깊이까지 분포하게 하는 것을 특징으로 하는 특허청구범위 1의 절연 게이트형 전계 효과 트랜지스터.
  4. 상기 제2도전형의 불순물층은 피이크 농도가 높고 급한 경사의 분포를 갖는 제1의 불순물층과, 피이크 농도가 상기 제1의 불순물층보다 낮고 깊이가 상기 제1의 불순물층보다 깊은 곳까지 분포하여 있는 제2의 불순물층으로 형성되어 있는 것을 특징으로 하는 특허청구범위 1의 절연 게이트형 전계 효과 트랜지스터.
  5. 상기 제1의 불순물층은 비소(As), 상기 제2의 불순물층은 인(P)의 확산에 의하여 각각 형성되는 것을 특징으로 하는 특허청구범위 4의 절연 게이트형 전계 효과 트랜지스터.
  6. 상기의 드레인 영역은 완만한 경사의 불순물 분포를 이루고 있고 제2도전형의 불순물층으로 형성되며, 상기의 소스 영역에 대응하여 형성되는 제2의 게이트 전극이 있고, 그 제2의 게이트 전극과 상기 소스영역과의 사이에는 제2 게이트 절연막이 개재(介在)하는 것을 특징으로 하는 특허청구범위 1의 절연 게이트형 전계 효과 트랜지스터.
  7. 상기의 소스 영역은 상기의 찬넬 영역과 동일한 불순물 분포를 갖는 것을 특징으로 하는 특허청구범위 6의 절연 게이트형 전계 효과 트랜지스터.
  8. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR8203702A 1981-08-24 1982-08-16 절연 게이트형 전계효과 트랜지스터 KR900004179B1 (ko)

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Application Number Priority Date Filing Date Title
JP56-131521 1981-08-24
JP56131521A JPS5833870A (ja) 1981-08-24 1981-08-24 半導体装置

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KR840001392A true KR840001392A (ko) 1984-04-30
KR900004179B1 KR900004179B1 (ko) 1990-06-18

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Country Link
US (1) US4656492A (ko)
EP (1) EP0073623B1 (ko)
JP (1) JPS5833870A (ko)
KR (1) KR900004179B1 (ko)
CA (1) CA1181532A (ko)
DE (1) DE3275684D1 (ko)

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EP0073623B1 (en) 1987-03-11
EP0073623A3 (en) 1983-11-23
JPS5833870A (ja) 1983-02-28
CA1181532A (en) 1985-01-22
EP0073623A2 (en) 1983-03-09
DE3275684D1 (en) 1987-04-16
KR900004179B1 (ko) 1990-06-18
US4656492A (en) 1987-04-07

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