KR840006873A - 반도체 메모리 - Google Patents

반도체 메모리 Download PDF

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Publication number
KR840006873A
KR840006873A KR1019830005205A KR830005205A KR840006873A KR 840006873 A KR840006873 A KR 840006873A KR 1019830005205 A KR1019830005205 A KR 1019830005205A KR 830005205 A KR830005205 A KR 830005205A KR 840006873 A KR840006873 A KR 840006873A
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KR
South Korea
Prior art keywords
semiconductor memory
memory according
semiconductor
field effect
effect transistor
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Application number
KR1019830005205A
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English (en)
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KR910002816B1 (ko
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히테오 스나미 (외 3)
Original Assignee
미쓰다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
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Publication of KR840006873A publication Critical patent/KR840006873A/ko
Application granted granted Critical
Publication of KR910002816B1 publication Critical patent/KR910002816B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

반도체 메모리
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도는 본 발명의 실시예의 평면도.
제7도는 본 발명의 실시예의 단면도.
제8도는 본 발명의 실시예의 제조공정을 공정 순서로 도시한 단면도.

Claims (6)

  1. 반도체 기판 위에 설치된 정보 축적부가 있는 용량과, 절연 케이트형 전계효과 트랜지스터를 포함하여, 상기 용량은 상기 반도체 기판에 형성된 홈의 측벽 및 바닥(府)부로 된 제1의 플레이트의 주부(主部)와 상기 측벽 및 바닥부 위에 절연막을 거쳐서 형성되여 상기 전계효과 트랜지스터의 소오스 혹은 드레인과 전기적으로 접속된 캐파시터 전극의 주요부를 갖는 것을 특징으로 하는 반도체 메모리.
  2. 상기 캐파시터 전극의 상부에 절연막을 거쳐서 제2의 플레이트를 설치한 것을 특징으로 하는 특허청구 범위 제1항 기재의 반도체 메모리
  3. 상기 반도체 기판은, 제1도전형의 반도체 층과 해당 층 위에 에피택설 성장에 의해 설치된 제2도전형의 반도체 층으로 된 것을 특징으로 하는 특허청구 범위 제1항 기재의 반도체 메모리.
  4. 상기 제1의 플레이트의 바닥부에 적어도 일부가, 상기 제1도전형의 반도체 층에 접속되여서 된 것을 특징으로 하는 특허청구 범위 제3항 기재의 반도체 메모리.
  5. 상기 절연 게이트형 전계효과 트랜지스터의 소오스 및 드레인 영역은, 상기 반도체 기판 위에 절연막을 거쳐서 형성된 것을 특징으로 하는 특허청구 범위 제1항 기재의 반도체 메모리.
  6. 상기 절연 게이트형 전계효과 트랜지스터의 적어도 게이트의 일부가, 상기 캐파시터 전극의 주요부의 위에 형성된 것을 특징으로 하는 특허청구 범위 제1항 기재의 반도체 메모리.
    ※ 참고사항 : 최초출원 내요에 의하여 공개하는 것임.
KR1019830005205A 1982-11-04 1983-11-02 반도체 메모리 KR910002816B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP192478 1982-11-04
JP57192478A JPS5982761A (ja) 1982-11-04 1982-11-04 半導体メモリ
JP57-192478 1982-11-04

Publications (2)

Publication Number Publication Date
KR840006873A true KR840006873A (ko) 1984-12-03
KR910002816B1 KR910002816B1 (ko) 1991-05-04

Family

ID=16291954

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830005205A KR910002816B1 (ko) 1982-11-04 1983-11-02 반도체 메모리

Country Status (4)

Country Link
EP (2) EP0108390B1 (ko)
JP (1) JPS5982761A (ko)
KR (1) KR910002816B1 (ko)
DE (2) DE3375965D1 (ko)

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KR910002816B1 (ko) 1991-05-04
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EP0108390B1 (en) 1988-03-09

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